Sang-Hoon Bae

About Sang-Hoon Bae

Sang-Hoon Bae, With an exceptional h-index of 47 and a recent h-index of 42 (since 2020), a distinguished researcher at Massachusetts Institute of Technology, specializes in the field of Materials Science.

His recent articles reflect a diverse array of research interests and contributions to the field:

High energy density in artificial heterostructures through relaxation time modulation

Nondestructive single‐atom‐thick crystallographic scanner via sticky‐note‐like van der Waals assembling‐disassembling

Advancing perovskite solar cell commercialization: Bridging materials, vacuum deposition, and AI-assisted automation

Junctionless Negative‐Differential‐Resistance Device Using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing

Confined Growth of 2D Materials and Their Heterostructures

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

2D materials–based electronics enabled by transfer printing technologies

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Sang-Hoon Bae Information

University

Position

(MIT)

Citations(all)

10616

Citations(since 2020)

7643

Cited By

5867

hIndex(all)

47

hIndex(since 2020)

42

i10Index(all)

65

i10Index(since 2020)

63

Email

University Profile Page

Google Scholar

Sang-Hoon Bae Skills & Research Interests

Materials Science

Top articles of Sang-Hoon Bae

Nondestructive single‐atom‐thick crystallographic scanner via sticky‐note‐like van der Waals assembling‐disassembling

Advanced Materials

2024/4/4

Advancing perovskite solar cell commercialization: Bridging materials, vacuum deposition, and AI-assisted automation

2024/4/1

Junctionless Negative‐Differential‐Resistance Device Using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing

Advanced Materials

2024/3/7

Confined Growth of 2D Materials and Their Heterostructures

2024/2/29

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Communications Engineering

2024/1/19

2D materials–based electronics enabled by transfer printing technologies

2024/1/1

Freestanding nanomembranes from materials innovation to AI hardware

2023/10/22

Sang-Hoon Bae
Sang-Hoon Bae

H-Index: 34

Allying nanophotonic structures with two-dimensional van der Waals materials

arXiv preprint arXiv:2305.08870

2023/5/12

Applications of remote epitaxy and van der Waals epitaxy

2023/4/30

Fabrication of single-crystalline ionically conductive materials and related articles and systems

2023/2/16

Freestanding membranes for unique functionality in electronics

ACS Applied Electronic Materials

2023/1/20

Functionalizing nanophotonic structures with 2D van der Waals materials

2023

Sellotape Exfoliated Layered Quasi‐2D Perovskite Thin Film for Efficient Light‐Emitting Diodes

Advanced Optical Materials

2022/9

See List of Professors in Sang-Hoon Bae University(Massachusetts Institute of Technology)

Co-Authors

academic-engine