Christopher Hinkle

Christopher Hinkle

University of Notre Dame

H-index: 48

North America-United States

About Christopher Hinkle

Christopher Hinkle, With an exceptional h-index of 48 and a recent h-index of 31 (since 2020), a distinguished researcher at University of Notre Dame,

His recent articles reflect a diverse array of research interests and contributions to the field:

Multi‐Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe2

Recent advances in 2D material theory, synthesis, properties, and applications

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting

Three-dimensional-topological-insulator tunnel diodes

Superior quality low-temperature growth of three-dimensional semiconductors using intermediate two-dimensional layers

Christopher Hinkle Information

University

Position

Electrical Engineering

Citations(all)

8574

Citations(since 2020)

4200

Cited By

6098

hIndex(all)

48

hIndex(since 2020)

31

i10Index(all)

95

i10Index(since 2020)

50

Email

University Profile Page

Google Scholar

Top articles of Christopher Hinkle

Multi‐Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications

Small

2024/4/9

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe2

ACS Applied Materials & Interfaces

2024/1/18

Christopher Hinkle
Christopher Hinkle

H-Index: 28

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

2023/4/17

Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting

Nature communications

2023/7/1

Three-dimensional-topological-insulator tunnel diodes

Physical Review Applied

2022/12/13

Superior quality low-temperature growth of three-dimensional semiconductors using intermediate two-dimensional layers

ACS nano

2022/10/24

Materials for interconnects

2021/10/1

Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration

2021/9/27

Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen‐Removal of the Native Tellurium Oxide

2021/4

New Strategies in Nanoelectronic 3D Heterogeneous Integration

NSF Future of Semiconductors Workshop

2021/2

Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment

The Journal of Physical Chemistry C

2020/6/11

Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study

npj 2D Materials and Applications

2020/5/18

(Invited) Ferromagnetism and Exchange Coupling with Fe-Doped WSe2

Electrochemical Society Meeting Abstracts 237

2020/5/1

Christopher Hinkle
Christopher Hinkle

H-Index: 28

Transition Metal Doping of MoS2: A Correlated Experimental and Theoretical Study

Electrochemical Society Meeting Abstracts 237

2020/5/1

See List of Professors in Christopher Hinkle University(University of Notre Dame)

Co-Authors

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