Naoteru Shigekawa

Naoteru Shigekawa

Osaka City University

H-index: 28

Asia-Japan

About Naoteru Shigekawa

Naoteru Shigekawa, With an exceptional h-index of 28 and a recent h-index of 17 (since 2020), a distinguished researcher at Osaka City University, specializes in the field of heterostructure "wafer bonding" "solar cell" "X on diamond".

His recent articles reflect a diverse array of research interests and contributions to the field:

Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth

Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C

High thermal stability and low thermal resistance of large area GaN/3C‐SiC/diamond junctions for practical device processes

Probe beam deflection technique with liquid immersion for fast mapping of thermal conductance

Fabrication and Electrical Characterization of GaAs/GaN Junctions

Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers

Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding

Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol–gel glass films

Naoteru Shigekawa Information

University

Position

___

Citations(all)

2533

Citations(since 2020)

1039

Cited By

1882

hIndex(all)

28

hIndex(since 2020)

17

i10Index(all)

79

i10Index(since 2020)

35

Email

University Profile Page

Osaka City University

Google Scholar

View Google Scholar Profile

Naoteru Shigekawa Skills & Research Interests

heterostructure "wafer bonding" "solar cell" "X on diamond"

Top articles of Naoteru Shigekawa

Title

Journal

Author(s)

Publication Date

Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth

Functional Diamond

Ryo Kagawa

Yutaka Ohno

Yasuyoshi Nagai

Naoteru Shigekawa

Jianbo Liang

2024/12/31

Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C

arXiv preprint arXiv:2404.09120

Zhe Cheng

Xiaoyang Ji

Zifeng Huang

Yutaka Ohno

Koji Inoue

...

2024/4/14

High thermal stability and low thermal resistance of large area GaN/3C‐SiC/diamond junctions for practical device processes

Small

Ryou Kagawa

Zhe Cheng

Keisuke Kawamura

Yutaka Ohno

Chihara Moriyama

...

2023/11/15

Probe beam deflection technique with liquid immersion for fast mapping of thermal conductance

Applied Physics Letters

Jinchi Sun

Zhe Cheng

Jianbo Liang

Naoteru Shigekawa

Keisuke Kawamura

...

2024/1/22

Fabrication and Electrical Characterization of GaAs/GaN Junctions

ECS Transactions

Shota Ishimi

Makoto Hirose

Yasuo Shimizu

Yutaka Ohno

Yasuyoshi Nagai

...

2023/9/29

Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers

Japanese Journal of Applied Physics

Kazuki Sawai

Jianbo Liang

Yasuo Shimizu

Yutaka Ohno

Yasuyoshi Nagai

...

2023/9/13

Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding

Journal of Applied Physics

Zhenwei Wang

Takahiro Kitada

Daiki Takatsuki

Jianbo Liang

Naoteru Shigekawa

...

2023/5/21

Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol–gel glass films

Japanese Journal of Applied Physics

Yuki Idutsu

Keigo Awai

Jianbo Liang

Hisaaki Nishimura

DaeGwi Kim

...

2023/3/23

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures

Applied Physics Letters

Yan Zhou

Shi Zhou

Shun Wan

Bo Zou

Yuxia Feng

...

2023/2/20

AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

Applied Physics Express

Ryo Kagawa

Keisuke Kawamura

Yoshiki Sakaida

Sumito Ouchi

Hiroki Uratani

...

2022/3/17

Quantitative capacitance measurements in frequency modulation electrostatic force microscopy

Japanese Journal of Applied Physics

Ryota Fukuzawa

Jianbo Liang

Naoteru Shigekawa

Takuji Takahashi

2022/6/14

Room-temperature bonding of GaN and diamond via a SiC layer

Functional Diamond

Ayaka Kobayashi

Hazuki Tomiyama

Yutaka Ohno

Yasuo Shimizu

Yasuyoshi Nagai

...

2022/12/31

Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications

Japanese Journal of Applied Physics

Jianbo Liang

Daiki Takatsuki

Masataka Higashiwaki

Yasuo Shimizu

Yutaka Ohno

...

2022/3/2

Intrinsic luminescence-downshifting effects of Zn-based Mn-doped nanoparticle layers on Si solar cells

Japanese Journal of Applied Physics

Yuki Idutsu

Keigo Awai

Jianbo Liang

Hisaaki Nishimura

DaeGwi Kim

...

2022/5/23

Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding

Diamond and Related Materials

Yota Uehigashi

Shinya Ohmagari

Hitoshi Umezawa

Hideaki Yamada

Jianbo Liang

...

2022/12/1

Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties

Journal of Applied Physics

Zhenwei Wang

Daiki Takatsuki

Jianbo Liang

Takahiro Kitada

Naoteru Shigekawa

...

2022/2/21

Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes

Japanese Journal of Applied Physics

Yota Uehigashi

Shinya Ohmagari

Hitoshi Umezawa

Hideaki Yamada

Jianbo Liang

...

2022/4/22

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Nature communications

Zhe Cheng

Jianbo Liang

Keisuke Kawamura

Hao Zhou

Hidetoshi Asamura

...

2022/11/23

Room temperature direct bonding of diamond and InGaP in atmospheric air

Functional Diamond

Jianbo Liang

Yuji Nakamura

Yutaka Ohno

Yasuo Shimizu

Yasuyoshi Nagai

...

2022/1/14

Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

Japanese Journal of Applied Physics

Kenya Yonekura

Tasuku Kawamoto

Jianbo Liang

Eiji Shikoh

Koichi Maezawa

...

2022/4/20

See List of Professors in Naoteru Shigekawa University(Osaka City University)

Co-Authors

H-index: 65
Martin Kuball

Martin Kuball

University of Bristol

H-index: 39
Akio Yamamoto

Akio Yamamoto

University of Fukui

H-index: 36
James W Pomeroy

James W Pomeroy

University of Bristol

H-index: 34
Kenji Araki

Kenji Araki

University of Miyazaki

H-index: 29
Koichi Maezawa

Koichi Maezawa

University of Toyama

H-index: 26
Tetsuya Suemitsu

Tetsuya Suemitsu

Tohoku University

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