Tetsuya Suemitsu

Tetsuya Suemitsu

Tohoku University

H-index: 26

Asia-Japan

About Tetsuya Suemitsu

Tetsuya Suemitsu, With an exceptional h-index of 26 and a recent h-index of 14 (since 2020), a distinguished researcher at Tohoku University, specializes in the field of III-V and III-N electron devices.

His recent articles reflect a diverse array of research interests and contributions to the field:

Conversion gain enhancement of a UTC-PD-integrated HEMT photonic double-mixer by high-intensity optical subcarrier signal

Utilizing High-Intensity Optical Subcarrier Signal for Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer

Fast THz Detection by an Asymmetric-Dual-Grating-Gate Graphene-Channel FET Based on Plasmonic and Photothermoelectric Effects

Introduction of Inverted-HEMT Structure in a Grating-Gate Plasmonic THz Detector for Drastic Improvement of the Pulse Response

Nitride Semiconductors Realizing Sustainable Society

Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Fast and Sensitive THz Detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET Due to Plasmonic and Photothermoelectric Rectification Effects

Efficient Optical-to-sub-THz Carrier Frequency Down-Conversion by UTC-PD-Integrated HEMT

Tetsuya Suemitsu Information

University

Position

___

Citations(all)

2580

Citations(since 2020)

647

Cited By

2096

hIndex(all)

26

hIndex(since 2020)

14

i10Index(all)

68

i10Index(since 2020)

26

Email

University Profile Page

Tohoku University

Google Scholar

View Google Scholar Profile

Tetsuya Suemitsu Skills & Research Interests

III-V and III-N electron devices

Top articles of Tetsuya Suemitsu

Title

Journal

Author(s)

Publication Date

Conversion gain enhancement of a UTC-PD-integrated HEMT photonic double-mixer by high-intensity optical subcarrier signal

D Nakajima

K Nishimura

M Watanabe

TT Lin

Keisuke Kasai

...

2023/3/5

Utilizing High-Intensity Optical Subcarrier Signal for Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer

T-T Lin

D Nakajima

K Nishimura

M Watanabe

K Kasai

...

2023/9/17

Fast THz Detection by an Asymmetric-Dual-Grating-Gate Graphene-Channel FET Based on Plasmonic and Photothermoelectric Effects

Koichi Tamura

Shinnosuke Uchigasaki

Hironobu Seki

Chao Tang

Daichi Ogiura

...

2023/9/17

Introduction of Inverted-HEMT Structure in a Grating-Gate Plasmonic THz Detector for Drastic Improvement of the Pulse Response

K Narita

T Negoro

Y Takida

H Minamide

T Suemitsu

...

2023/9/17

Nitride Semiconductors Realizing Sustainable Society

Takashi Matsuoka

Tetsuya Suemitsu

2023/6/19

Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Nanophotonics

Akira Satou

Takumi Negoro

Kenichi Narita

Tomotaka Hosotani

Koichi Tamura

...

2023/11/27

Fast and Sensitive THz Detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET Due to Plasmonic and Photothermoelectric Rectification Effects

Koichi Tamura

Chao Tang

Daichi Ogiura

Kento Suwa

Hirokazu Fukidome

...

2023/5/7

Efficient Optical-to-sub-THz Carrier Frequency Down-Conversion by UTC-PD-Integrated HEMT

Tsung-Tse Lin

Mitsuki Watanabe

Dai Nagajima

Keisuke Kasai

Masato Yoshida

...

2023/10/15

Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure

APL Photonics

Koichi Tamura

Chao Tang

Daichi Ogiura

Kento Suwa

Hirokazu Fukidome

...

2022/12/1

UTC-PD-integrated HEMT for optical-to-MMW/THz carrier frequency down-conversion: scaling rule of conversion gain on UTC-PD mesa size

D Nakajima

K Nishimura

T Hosotani

K Kasai

M Yoshida

...

2022/8/28

Pulse Response of Asymmetric Dual-Grating-Gate HEMT Plasmonic THz Detector

K Narita

T Negoro

Y Takida

H Ito

H Minamide

...

2022/8/28

Graphene-based plasmonic metamaterial for terahertz laser transistors

Taiichi Otsuji

Stephane Albon Boubanga-Tombet

Akira Satou

Deepika Yadav

Hirokazu Fukidome

...

2022/5/11

Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors

Japanese Journal of Applied Physics

Kiattiwut Prasertsuk

Tetsuya Suemitsu

Takashi Matsuoka

2021/12/15

Recent Progress in Carrier Down-Conversion Devices Between Optical Communication and Beyond 5G Wireless Communication

Akira Satou

Dai Nakajima

Kazuki Nishimura

Tomotaka Hosotani

Katsumi Iwatsuki

...

2021/12/13

Optical-to-wireless carrier frequency down-conversion by UTC-PD-Integrated HEMT: dependence of conversion gain on UTC-PD mesa size

K Nishimura

T Hosotani

D Nakajima

T Suemitsu

Katsumi Iwatsuki

...

2021/6/21

Unitraveling-carrier-photodiode-integrated high-electron-mobility transistor for photonic double-mixing

Journal of Lightwave Technology

Akira Satou

Yuya Omori

Kazuki Nishimura

Tomotaka Hosotani

Katsumi Iwatsuki

...

2021/5/15

Electroluminescence of flip-chip-bonded InP-based HEMTs with 0.1-μm gate

Naoteru Shigekawa

Tomofumi Furuta

Satoshi Kodama

Tetsuya Suemitsu

Yohtaro Umeda

2021/1/31

A study on precise extraction of parasitic resistances in InGaAs HEMTs

IEICE Technical Report; IEICE Tech. Rep.

Keigo Yaguchi

Tomotaka Hosotani

Yohtaro Umeda

Kyoya Takano

Tetsuya Suemitsu

...

2021/1/22

Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness

physica status solidi (b)

Tetsuya Suemitsu

Isao Makabe

2020/4

See List of Professors in Tetsuya Suemitsu University(Tohoku University)