James W Pomeroy

James W Pomeroy

University of Bristol

H-index: 36

Europe-United Kingdom

About James W Pomeroy

James W Pomeroy, With an exceptional h-index of 36 and a recent h-index of 27 (since 2020), a distinguished researcher at University of Bristol, specializes in the field of Thermography, Raman, GaN HEMT, Reliability, Diamond.

His recent articles reflect a diverse array of research interests and contributions to the field:

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD

Heterogenous integration of gallium oxide with diamond and SiC

Dielectric properties of diamond using an X-band microwave split dielectric resonator

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Thermal conductivity of SiC and PyC coatings in spherical nuclear fuel particles measured by nanosecond time domain thermoreflectance

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Semiconductor on diamond substrate, precursor for use in preparing a semiconductor on diamond substrate, and methods for making the same

James W Pomeroy Information

University

Position

___

Citations(all)

4100

Citations(since 2020)

2288

Cited By

2557

hIndex(all)

36

hIndex(since 2020)

27

i10Index(all)

78

i10Index(since 2020)

54

Email

University Profile Page

University of Bristol

Google Scholar

View Google Scholar Profile

James W Pomeroy Skills & Research Interests

Thermography

Raman

GaN HEMT

Reliability

Diamond

Top articles of James W Pomeroy

Title

Journal

Author(s)

Publication Date

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

Martin Kuball

Akhil Kumar Shaji

Stefano Dalcanale

Michael Uren

James Pomeroy

...

2024/3/22

Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD

Filip Gucmann

Milan Ťapajna

Kristína Hušeková

Edmund Dobročka

Alica Rosová

...

2024/3/15

Heterogenous integration of gallium oxide with diamond and SiC

Arpit Nandi

Indraneel Sanyal

Alexander Petkov

James W Pomeroy

David Cherns

...

2024/3/15

Dielectric properties of diamond using an X-band microwave split dielectric resonator

Carbon

Jerome A Cuenca

Soumen Mandal

Jaspa Stritt

Xiang Zheng

James Pomeroy

...

2024/3/1

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

IEEE Transactions on Electron Devices

Xiang Zheng

James W Pomeroy

Gautam Jindal

Martin Kuball

2024/2/26

Thermal conductivity of SiC and PyC coatings in spherical nuclear fuel particles measured by nanosecond time domain thermoreflectance

Journal of the European Ceramic Society

James W Pomeroy

Alex Leide

Miriam Mowat

Martin Kuball

Mark Davies

...

2024/1/9

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Yuke Cao

James W Pomeroy

Jingshan Wang

Patrick Fay

Bhawani Shankar

...

2023/3/15

Semiconductor on diamond substrate, precursor for use in preparing a semiconductor on diamond substrate, and methods for making the same

2023/10/17

Electrical and thermal characterisation of liquid metal thin-film GaO–SiO heterostructures

Scientific Reports

Alexander Petkov

Abhishek Mishra

Mattia Cattelan

Daniel Field

James Pomeroy

...

2023/3/1

Thermal Characterization of Metal-Diamond Composite Heat Spreaders Using Low-Frequency-Domain Thermoreflectance

ACS Applied Electronic Materials

Zeina Abdallah

James W Pomeroy

Erich Neubauer

Martin Kuball

2023/9/14

Molecular dynamics study of thermal transport across Ga2O3–diamond interfaces

Applied Physics Letters

Alexander Petkov

Abhishek Mishra

James W Pomeroy

Martin Kuball

2023/1/16

Hot electron-induced Bremsstrahlung emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

IEEE Electron Device Letters

Akhil S Kumar

Michael J Uren

James W Pomeroy

Matthew D Smith

Shamima Afroz

...

2023/9/4

Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly

Zeina Abdallah

James W Pomeroy

Nicolas Blasakis

Athanasios Baltopoulos

Antonios Vavouliotis

...

2023

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Journal of Vacuum Science & Technology A

Fedor Hrubišák

Kristína Hušeková

Xiang Zheng

Alica Rosová

Edmund Dobročka

...

2023/7/1

Ultra-wide bandgap Ga2O3 technologies: benefits of heterogenous integration

Abhishek Mishra

Arpit Nandi

Indraneel Sanyal

Zeina Abdallah

James W Pomeroy

...

2023/3/16

Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation

Scripta Materialia

Daniel E Field

Ryan Beale

Naomi Getzler

James W Pomeroy

Alexander J Leide

...

2022/3/1

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Applied Physics Letters

Yuke Cao

James W Pomeroy

Michael J Uren

Feiyuan Yang

Jingshan Wang

...

2022/6/13

A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs

Applied Physics Letters

Xiang Zheng

Taylor Moule

James W Pomeroy

Masataka Higashiwaki

Martin Kuball

2022/2/14

High-speed electro-thermal measurements in RF power amplifiers using thermo-reflectance

Gautam Jindal

James W Pomeroy

Gavin T Watkins

Kevin Morris

Martin Kuball

...

2022/4/7

A novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment of packaged devices

CS MANTECH Conf

Zeina Abdallah

Nathawat Poopakdee

James W Pomeroy

Martin Kuball

2022

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