Mikhail Gaevski
University of South Carolina
H-index: 26
North America-United States
Top articles of Mikhail Gaevski
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Deep-scaling and modular interconnection of deep ultraviolet micro-sized emitters | 2023/3/30 | ||
Nanomaterial manufacturing methods | 2023/12/28 | ||
Heterostructure for an optoelectronic device | 2023/10/17 | ||
Transfer of wide and ultrawide bandgap layers to engineered substrate | 2023/7/20 | ||
Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment | Coatings | Samiul Hasan Mohi Uddin Jewel Stavros G Karakalos Mikhail Gaevski Iftikhar Ahmad | 2022/6/29 |
Electron mobility and velocity in Al 0.45 Ga 0.55 N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications | Applied Physics Letters | Hansheng Ye Mikhail Gaevski Grigory Simin Asif Khan Patrick Fay | 2022/3 |
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes | Applied Physics Express | Richard Floyd Mikhail Gaevski Kamal Hussain Abdullah Mamun MVS Chandrashekhar | 2021/7/15 |
Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate | Journal of Material Research | Samiul Hasan Abdullah Mamun Kamal Hussain Mikhail Gaevski Iftikhar Ahmad | 2021/9/29 |
Semiconductor layer including compositional inhomogeneities | 2021/2/16 | ||
High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V | physica status solidi (RRL)–Rapid Research Letters | Hao Xue Kamal Hussain Vishank Talesara Towhidur Razzak Mikhail Gaevski | 2021/6 |
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders | Applied Physics Letters | Md Didarul Alam Mikhail Gaevski Mohi Uddin Jewel Shahab Mollah Abdullah Mamun | 2021/9 |
Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics | Electrochemical Society Meeting Abstracts 239 | Abdullah Mamun Kamal Hussain Mohi Uddin Jewel Shahab Mollah Kenny Huynh | 2021/5/30 |
Correction to: Investigation of MOCVD grown crack‑free 4 μm thick aluminum nitride using nitrogen as a carrier gas | MRS Advances | Samiul Hasan Abdullah Mamun Kamal Hussain Dhruvinkumar Patel Mikhail Gaevski | 2021/8 |
Semiconductor structure with layer having protrusions | 2021/1/12 | ||
Investigation of MOCVD grown crack-free 4 μm thick aluminum nitride using nitrogen as a carrier gas | MRS Advances | Samiul Hasan Abdullah Mamun Kamal Hussain Dhruvinkumar Patel Mikhail Gaevski | 2021/8 |
Temperature Effect on Performance of Enhancement Mode Al 0.4 Ga 0.6 n-Channel Moshfets with Hybrid Oxide | ECS Meeting Abstracts | Shahab Mollah Mikhail Gaevski Kamal Hussain Abdullah Mamun Mvs Chandrashekhar | 2021/5 |
Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1 | Applied Physics Express | Mikhail Gaevski Shahab Mollah Kamal Hussain Joshua Letton Abdullah Mamun | 2020/9/3 |
High-current recessed gate enhancement-mode ultrawide bandgap AlxGa1-xN channel MOSHFET with drain current 0.48 A/mm and threshold voltage +3.6 V | Applied Physics Express | S Mollah M Gaevski K Hussain A Mamun MVS Chandrashekhar | 2020/12/21 |
Photonics integrated circuits using AlxGa1− xN based UVC light-emitting diodes, photodetectors and waveguides | Applied Physics Express | Richard Floyd Kamal Hussain Abdullah Mamun Mikhail Gaevski Grigory Simin | 2020/1/8 |
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … | physica status solidi (a) | Shahab Mollah Kamal Hussain Richard Floyd Abdullah Mamun Mikhail Gaevski | 2020/4 |
Co-Authors
