Grigory Simin
University of South Carolina
H-index: 61
North America-United States
Top articles of Grigory Simin
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor | arXiv preprint arXiv:2311.14672 | G Simin M Shur | 2023/10/18 |
Al0. 64Ga0. 36N channel MOSHFET on single crystal bulk AlN substrate | Applied Physics Express | Abdullah Mamun Kamal Hussain Richard Floyd MD Didarul Alam MVS Chandrashekhar | 2023/6/1 |
High figure of merit extreme bandgap Al0. 87Ga0. 13N-Al0. 64Ga0. 36N heterostructures over bulk AlN substrates | Applied Physics Express | Kamal Hussain Abdullah Mamun Richard Floyd Md Didarul Alam Michael E Liao | 2023/1/31 |
Optoelectronic Device Mounting Structure with Embedded Heatsink Element | 2022/7/21 | ||
Realization of flexible AlGaN/GaN HEMT by laser liftoff | Applied Physics Express | Md Didarul Alam Kamal Hussain Shahab Mollah Grigory Simin Asif Khan | 2022/6/29 |
Electron mobility and velocity in Al0. 45Ga0. 55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications | Applied Physics Letters | Hansheng Ye Mikhail Gaevski Grigory Simin Asif Khan Patrick Fay | 2022/3/7 |
Threshold voltage control with high-temperature gate-oxide annealing in ultrawide bandgap AlGaN-channel MOSHFETs | Applied Physics Express | Shahab Mollah Kamal Hussain Abdullah Mamun Md Didarul Alam MVS Chandrashekhar | 2022/9/6 |
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1− x N channel MOSHFET with drain current 0.48 A mm− 1 and threshold voltage+ 3.6 V | Applied Physics Express | S Mollah M Gaevski K Hussain A Mamun MVS Chandrashekhar | 2020/12/21 |
Spatially resolved Fourier transform impedance spectroscopy: A technique to rapidly characterize interfaces, applied to a QD/SiC heterojunction | 2022/11/24 | ||
Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics | Electrochemical Society Meeting Abstracts 239 | Abdullah Mamun Kamal Hussain Mohi Uddin Jewel Shahab Mollah Kenny Huynh | 2021/5/30 |
Temperature Effect on Performance of Enhancement Mode Al 0.4 Ga 0.6 n-Channel Moshfets with Hybrid Oxide | ECS Meeting Abstracts | Shahab Mollah Mikhail Gaevski Kamal Hussain Abdullah Mamun Mvs Chandrashekhar | 2021/5 |
Semiconductor heterostructure with multiple active regions | 2021/3/30 | ||
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders | Applied Physics Letters | Md Didarul Alam Mikhail Gaevski Mohi Uddin Jewel Shahab Mollah Abdullah Mamun | 2021/9 |
Light Extraction from Optoelectronic Device | 2021/1/28 | ||
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes | Applied Physics Express | Richard Floyd Mikhail Gaevski Kamal Hussain Abdullah Mamun MVS Chandrashekhar | 2021/7/15 |
Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1 | Applied Physics Express | Mikhail Gaevski Shahab Mollah Kamal Hussain Joshua Letton Abdullah Mamun | 2020/9/3 |
Opto-electronic device with two-dimensional injection layers | 2018/10/2 | ||
Photovoltaic and photoconductive action due to PbS quantum dots on graphene/SiC Schottky diodes from NIR to UV | American Chemical Society SciMeetings | fiaz Ahmed MVS Chandrashekhar Grigory Simin Joshua Letton Andrew Greytak | 2020/8/17 |
An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays | Applied Physics Express | Richard Floyd Mikhail Gaevski Md Didarul Alam Samia Islam Kamal Hussain | 2020/12/17 |
Access resistance modulated solid-state light source | 2020/3/10 |
