Michael D. Williams

Michael D. Williams

Clark Atlanta University

H-index: 19

North America-United States

About Michael D. Williams

Michael D. Williams, With an exceptional h-index of 19 and a recent h-index of 7 (since 2020), a distinguished researcher at Clark Atlanta University, specializes in the field of surface physics, photoemission spectroscopy, III-V semiconductors, interface physics, 2D materials.

His recent articles reflect a diverse array of research interests and contributions to the field:

Strain engineering of KTaO3 grown by Suboxide Molecular-Beam Epitaxy

Introduction of the American Vacuum Society―Science and Technology of Materials, Interfaces and Processing (AVS)

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Molecular beam epitaxy of KTaO3

Workshop focuses on the rise in MSE undergraduates

Substoichiometric Tuning of the Electronic Properties of Titania

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

Michael D. Williams Information

University

Position

Professor/Director

Citations(all)

1750

Citations(since 2020)

151

Cited By

1687

hIndex(all)

19

hIndex(since 2020)

7

i10Index(all)

44

i10Index(since 2020)

4

Email

University Profile Page

Google Scholar

Michael D. Williams Skills & Research Interests

surface physics

photoemission spectroscopy

III-V semiconductors

interface physics

2D materials

Top articles of Michael D. Williams

Strain engineering of KTaO3 grown by Suboxide Molecular-Beam Epitaxy

Bulletin of the American Physical Society

2024/3/7

Introduction of the American Vacuum Society―Science and Technology of Materials, Interfaces and Processing (AVS)

表面と真空

2024/2/10

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

APL materials

2023/4/1

Molecular beam epitaxy of KTaO3

Journal of Vacuum Science & Technology A

2023/3/1

Workshop focuses on the rise in MSE undergraduates

2021/1

Substoichiometric Tuning of the Electronic Properties of Titania

Thin Solid Films

2021/1/1

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

Journal of Vacuum Science & Technology B

2020/7/1

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

Journal of Vacuum Science & Technology B

2020/5/1

See List of Professors in Michael D. Williams University(Clark Atlanta University)

Co-Authors

academic-engine