Michael D. Williams

Michael D. Williams

Clark Atlanta University

H-index: 19

North America-United States

About Michael D. Williams

Michael D. Williams, With an exceptional h-index of 19 and a recent h-index of 7 (since 2020), a distinguished researcher at Clark Atlanta University, specializes in the field of surface physics, photoemission spectroscopy, III-V semiconductors, interface physics, 2D materials.

His recent articles reflect a diverse array of research interests and contributions to the field:

Strain engineering of KTaO3 grown by Suboxide Molecular-Beam Epitaxy

Introduction of the American Vacuum Society―Science and Technology of Materials, Interfaces and Processing (AVS)

Molecular beam epitaxy of KTaO3

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Workshop focuses on the rise in MSE undergraduates

Substoichiometric Tuning of the Electronic Properties of Titania

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

Michael D. Williams Information

University

Position

Professor/Director

Citations(all)

1750

Citations(since 2020)

151

Cited By

1687

hIndex(all)

19

hIndex(since 2020)

7

i10Index(all)

44

i10Index(since 2020)

4

Email

University Profile Page

Clark Atlanta University

Google Scholar

View Google Scholar Profile

Michael D. Williams Skills & Research Interests

surface physics

photoemission spectroscopy

III-V semiconductors

interface physics

2D materials

Top articles of Michael D. Williams

Title

Journal

Author(s)

Publication Date

Strain engineering of KTaO3 grown by Suboxide Molecular-Beam Epitaxy

Bulletin of the American Physical Society

Tobias Schwaigert

Sankalpa Hazra

Steffen Ganschow

Michael Williams

David Muller

...

2024/3/7

Introduction of the American Vacuum Society―Science and Technology of Materials, Interfaces and Processing (AVS)

表面と真空

Michael D WILLIAMS

2024/2/10

Molecular beam epitaxy of KTaO3

Journal of Vacuum Science & Technology A

Tobias Schwaigert

Salva Salmani-Rezaie

Matthew R Barone

Hanjong Paik

Ethan Ray

...

2023/3/1

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

APL materials

Kathy Azizie

Felix VE Hensling

Cameron A Gorsak

Yunjo Kim

Naomi A Pieczulewski

...

2023/4/1

Workshop focuses on the rise in MSE undergraduates

Susan B Sinnott

David F Bahr

Angus Rockett

Michael D Williams

Hatem Zurob

2021/1

Substoichiometric Tuning of the Electronic Properties of Titania

Thin Solid Films

Crystal N Bell

Dong-Chan Lee

Matthew N Drexler

Christopher M Rouleau

Kotaro Sasaki

...

2021/1/1

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

Journal of Vacuum Science & Technology B

MK Senevirathna

Mark Vernon

Graham A Cooke

Garnett B Cross

Alexander Kozhanov

...

2020/7/1

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

Journal of Vacuum Science & Technology B

MK Senevirathna

Michael D Williams

Graham A Cooke

Alexander Kozhanov

Mark Vernon

...

2020/5/1

See List of Professors in Michael D. Williams University(Clark Atlanta University)

Co-Authors

H-index: 128
Seth Marder

Seth Marder

Georgia Institute of Technology

H-index: 71
Mark van Schilfgaarde

Mark van Schilfgaarde

King's College

H-index: 69
Barbara Baird

Barbara Baird

Cornell University

H-index: 67
Alan Luntz

Alan Luntz

Stanford University

H-index: 52
Nathan Newman

Nathan Newman

Arizona State University

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