Erik Lind
Lunds Universitet
H-index: 37
Europe-Sweden
Top articles of Erik Lind
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Gate-controlled near-surface Josephson junctions | Applied Physics Letters | L Olausson P Olausson E Lind | 2024/1/22 |
Tuning of quasi-vertical GaN FinFETs fabricated on SiC substrates | IEEE Transactions on Electron Devices | Philipp Gribisch Rosalia Delgado Carrascon Vanya Darakchieva Erik Lind | 2023/4/10 |
Geometrical magnetoresistance as a tool for carrier mobility extraction in InGaAs MOSFETs | IEEE Transactions on Electron Devices | Patrik Olausson Erik Lind | 2023/10/4 |
Low temperature atomic hydrogen annealing of InGaAs MOSFETs | Semiconductor Science and Technology | Patrik Olausson Rohit Yadav Rainer Timm Erik Lind | 2023/3/15 |
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing | Neuromorphic Computing and Engineering | David Winge Magnus Borgström Erik Lind Anders Mikkelsen | 2023/9/18 |
Cryogenic characteristics of InGaAs MOSFET | IEEE Transactions on Electron Devices | L Södergren P Olausson E Lind | 2023/1/27 |
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs | IEEE Transactions on Electron Devices | Philipp Gribisch Rosalia Delgado Carrascon Vanya Darakchieva Erik Lind | 2023/7/7 |
8-band k⋅ p modeling of strained InxGa (1− x) As/InP heterostructure nanowires | Journal of Applied Physics | Navya Sri Garigapati Erik Lind | 2023/1/7 |
Time evolution of surface species during the ALD of high-k oxide on InAs | Surfaces and Interfaces | Giulio D'Acunto Payam Shayesteh Esko Kokkonen Virginia Boix de la Cruz Foqia Rehman | 2023/7/1 |
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten | Nano Letters | Johannes Svensson Patrik Olausson Heera Menon Sebastian Lehmann Erik Lind | 2023/5/25 |
Template-Assisted Selective Epitaxy of InAs on W | Johannes Svensson Patrik Olausson Heera Menon Erik Lind Mattias Borg | 2022/6/1 | |
Low-temperature characteristics of nanowire network demultiplexer for qubit biasing | Nano Letters | Lasse Sodergren Patrik Olausson Erik Lind | 2022/5/12 |
Performance, analysis, and modeling of III-V vertical nanowire MOSFETs on Si at higher voltages | IEEE Transactions on Electron Devices | Stefan Andrić Olli-Pekka Kilpi Mamidala Saketh Ram Johannes Svensson Erik Lind | 2022/4/28 |
Strained InxGa (1− x) As/InP near surface quantum wells and MOSFETs | Applied Physics Letters | Navya Sri Garigapati Lasse Södergren Patrik Olausson Erik Lind | 2022/2/28 |
Oxygen relocation during HfO 2 ALD on InAs | Faraday Discussions | Giulio D’Acunto Esko Kokkonen Payam Shayesteh Virginia Boix Foqia Rehman | 2022 |
Simulating the Effect of Spatial Potential Variation in Nanodevices with the NEGF Method | Markus Berthilsson Erik Lind | 2022/11/16 | |
Lateral III–V nanowire MOSFETs in low-noise amplifier stages | IEEE Transactions on Microwave Theory and Techniques | Stefan Andrić Fredrik Lindelöw Lars Ohlsson Fhager Erik Lind Lars-Erik Wernersson | 2021/11/9 |
Increased breakdown voltage in vertical heterostructure III-V nanowire MOSFETs with a field plate | IEEE Electron Device Letters | Olli-Pekka Kilpi Stefan Andrić Johannes Svensson Mamidala Saketh Ram Erik Lind | 2021/9/27 |
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs With Self-Aligned a:Si Spacers | IEEE Transactions on Electron Devices | Navya S Garigapati Fredrik Lindelöw Lasse Södergren Erik Lind | 2021/7/8 |
Optimization of near‐surface quantum well processing | physica status solidi (a) | Patrik Olausson Lasse Södergren Mattias Borg Erik Lind | 2021/4 |
Co-Authors
