Karl-Magnus Persson

Karl-Magnus Persson

Lunds Universitet

H-index: 15

Europe-Sweden

About Karl-Magnus Persson

Karl-Magnus Persson, With an exceptional h-index of 15 and a recent h-index of 13 (since 2020), a distinguished researcher at Lunds Universitet, specializes in the field of Electronics.

His recent articles reflect a diverse array of research interests and contributions to the field:

The Effect of Deposition Conditions on Heterointerface‐Driven Band Alignment and Resistive Switching Properties

A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation

High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon

Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration

Low-power resistive memory integrated on III–V vertical nanowire MOSFETs on silicon

Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

Karl-Magnus Persson Information

University

Position

___

Citations(all)

784

Citations(since 2020)

379

Cited By

517

hIndex(all)

15

hIndex(since 2020)

13

i10Index(all)

17

i10Index(since 2020)

16

Email

University Profile Page

Lunds Universitet

Google Scholar

View Google Scholar Profile

Karl-Magnus Persson Skills & Research Interests

Electronics

Top articles of Karl-Magnus Persson

Title

Journal

Author(s)

Publication Date

The Effect of Deposition Conditions on Heterointerface‐Driven Band Alignment and Resistive Switching Properties

Advanced Electronic Materials

Zhihua Yong

Mamidala Saketh Ram

Karl‐Magnus Persson

Gomathy Sandhya Subramanian

Lars‐Erik Wernersson

...

2022/11

A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon

Mamidala Saketh Ram

Karl-Magnus Persson

Lars-Erik Wernersson

2022/6/11

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Applied Surface Science

Zhihua Yong

Karl-Magnus Persson

Mamidala Saketh Ram

Giulio D'Acunto

Yi Liu

...

2021/6/15

Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation

IEEE Journal of the Electron Devices Society

Karl-Magnus Persson

Mamidala Saketh Ram

Lars-Erik Wernersson

2021/5/12

High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon

Nature Electronics

Mamidala Saketh Ram

Karl-Magnus Persson

Austin Irish

Adam Jönsson

Rainer Timm

...

2021/12

Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration

Mamidala Saketh Ram

Karl-Magnus Persson

Lars-Erik Wernersson

2021/6/20

Low-power resistive memory integrated on III–V vertical nanowire MOSFETs on silicon

IEEE Electron Device Letters

Mamidala Saketh Ram

Karl-Magnus Persson

Mattias Borg

Lars-Erik Wernersson

2020/8/3

Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

Advanced Electronic Materials

Karl‐Magnus Persson

Mamidala Saketh Ram

Olli‐Pekka Kilpi

Mattias Borg

Lars‐Erik Wernersson

2020/6

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Applied Physics Letters

Anton EO Persson

Robin Athle

Pontus Littow

Karl-Magnus Persson

Johannes Svensson

...

2020/2/10

See List of Professors in Karl-Magnus Persson University(Lunds Universitet)