johannes svensson

johannes svensson

Lunds Universitet

H-index: 27

Europe-Sweden

About johannes svensson

johannes svensson, With an exceptional h-index of 27 and a recent h-index of 21 (since 2020), a distinguished researcher at Lunds Universitet, specializes in the field of nanowires, III-V semiconductors, infrared photodetectors, field-effect transistors, expitaxial growth.

His recent articles reflect a diverse array of research interests and contributions to the field:

Template-Assisted Selective Epitaxy of InAs on W

Performance, analysis, and modeling of III-V vertical nanowire MOSFETs on Si at higher voltages

Supplementary Information: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications

Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si

Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition

Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

johannes svensson Information

University

Position

Researcher

Citations(all)

2499

Citations(since 2020)

1261

Cited By

1786

hIndex(all)

27

hIndex(since 2020)

21

i10Index(all)

49

i10Index(since 2020)

36

Email

University Profile Page

Lunds Universitet

Google Scholar

View Google Scholar Profile

johannes svensson Skills & Research Interests

nanowires

III-V semiconductors

infrared photodetectors

field-effect transistors

expitaxial growth

Top articles of johannes svensson

Title

Journal

Author(s)

Publication Date

Template-Assisted Selective Epitaxy of InAs on W

Johannes Svensson

Patrik Olausson

Heera Menon

Erik Lind

Mattias Borg

2022/6/1

Performance, analysis, and modeling of III-V vertical nanowire MOSFETs on Si at higher voltages

IEEE Transactions on Electron Devices

Stefan Andrić

Olli-Pekka Kilpi

Mamidala Saketh Ram

Johannes Svensson

Erik Lind

...

2022/4/28

Supplementary Information: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Dmitry Dzhigaev

Johannes Svensson

Abinaya Krishnaraja

Zhongyunshen Zhu

Zhe Ren

...

2022/3/31

Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications

IEEE Electron Device Letters

Mamidala Saketh Ram

Johannes Svensson

Sebastian Skog

Sofie Johannesson

Lars-Erik Wernersson

2022/10/19

Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si

ACS Applied Electronic Materials

Zhongyunshen Zhu

Adam Jonsson

Yen-Po Liu

Johannes Svensson

Rainer Timm

...

2022/1/10

Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition

Advanced Electronic Materials

Anette Löfstrand

Reza Jafari Jam

Johannes Svensson

Adam Jönsson

Heera Menon

...

2022/9

Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces

Applied Surface Science

Yen-Po Liu

Sofie Yngman

Andrea Troian

Giulio D'Acunto

Adam Jönsson

...

2022/8/15

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

ACS Applied Electronic Materials

Adam Jonsson

Johannes Svensson

Elisabetta Maria Fiordaliso

Erik Lind

Markus Hellenbrand

...

2021/11/19

Increased breakdown voltage in vertical heterostructure III-V nanowire MOSFETs with a field plate

IEEE Electron Device Letters

Olli-Pekka Kilpi

Stefan Andrić

Johannes Svensson

Mamidala Saketh Ram

Erik Lind

...

2021/9/27

Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing

Nanotechnology

Zhongyunshen Zhu

Johannes Svensson

Adam Jönsson

Lars-Erik Wernersson

2021/11/24

Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs

ACS Applied Electronic Materials

Abinaya Krishnaraja

Johannes Svensson

Elvedin Memisevic

Zhongyunshen Zhu

Axel R Persson

...

2020/9/1

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Applied Physics Letters

Anton EO Persson

Robin Athle

Pontus Littow

Karl-Magnus Persson

Johannes Svensson

...

2020/2/10

Gate-length dependence of vertical GaSb nanowire p-MOSFETs on Si

IEEE Transactions on Electron Devices

Adam Jönsson

Johannes Svensson

Erik Lind

Lars-Erik Wernersson

2020/8/14

Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Nanoscale

Dmitry Dzhigaev

Johannes Svensson

Abinaya Krishnaraja

Zhongyunshen Zhu

Zhe Ren

...

2020

High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm

IEEE Electron Device Letters

Olli-Pekka Kilpi

Markus Hellenbrand

Johannes Svensson

Axel R Persson

Reine Wallenberg

...

2020/6/24

A method for estimating defects in ferroelectric thin film MOSCAPs

Applied Physics Letters

Anton EO Persson

Robin Athle

Johannes Svensson

Mattias Borg

Lars-Erik Wernersson

2020/12/14

Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin = 32 mV/dec and gm/ID = 100 V-1

Abinaya Krishnaraja

Johannes Svensson

Lars-Erik Wernersson

2020/6/13

Deliverable–D2. 7

Lars

G Ghibaudo

C Thedorou

F Balestra

F Serra

X Mescot

...

2020/9/14

Vertical nanowire III–V MOSFETs with improved high‐frequency gain

Electronics Letters

O‐P Kilpi

Markus Hellenbrand

Johannes Svensson

Erik Lind

L‐E Wernersson

2020/6

Compressively-strained GaSb nanowires with core-shell heterostructures

Nano Research

Zhongyunshen Zhu

Johannes Svensson

Axel R Persson

Reine Wallenberg

Andrei V Gromov

...

2020/9

See List of Professors in johannes svensson University(Lunds Universitet)