Dmitry Lopaev (ORCID: 0000-0003-4975-3487)

Dmitry Lopaev (ORCID: 0000-0003-4975-3487)

Moscow State University

H-index: 30

Europe-Russia

About Dmitry Lopaev (ORCID: 0000-0003-4975-3487)

Dmitry Lopaev (ORCID: 0000-0003-4975-3487), With an exceptional h-index of 30 and a recent h-index of 17 (since 2020), a distinguished researcher at Moscow State University, specializes in the field of low-temperature plasma, rf discharges, plasma processing, plasma-surface interaction, EUV lithography.

His recent articles reflect a diverse array of research interests and contributions to the field:

Probing surface reactivity in plasmas-is it valid to use a constant reaction probability model?

Temperature Effects and Mechanisms of the Action of O, N, and F Atoms on SiOCH Nanoporous Dielectrics

DC Magnetron Sputtering Plasma: VUV Radiation and Discharge Structure

Main Aspects of Metallization Formation in Sub-10 nm Integrated Circuit Manufacturing Technology

Oxygen atom and ozone kinetics in the afterglow of a pulse-modulated DC discharge in pure O2: an experimental and modelling study of surface mechanisms and ozone vibrational …

Analysis of the Possibility of Independent Control of Various Plasma Parameters of an RF Non-Self-Sustained Plasma Discharge with Additional Ionization by an Electron Beam

Sputtering of amorphous Si by low-energy Ar+, Kr+, and Xe+ ions

N2 PLASMA INTERACTION WITH 2D MoS2: EXPERIMENT AND MODELING

Dmitry Lopaev (ORCID: 0000-0003-4975-3487) Information

University

Position

Skobeltsyn Institute of Nuclear Physics Microelectronics Dep.

Citations(all)

2771

Citations(since 2020)

1185

Cited By

2085

hIndex(all)

30

hIndex(since 2020)

17

i10Index(all)

69

i10Index(since 2020)

39

Email

University Profile Page

Moscow State University

Google Scholar

View Google Scholar Profile

Dmitry Lopaev (ORCID: 0000-0003-4975-3487) Skills & Research Interests

low-temperature plasma

rf discharges

plasma processing

plasma-surface interaction

EUV lithography

Top articles of Dmitry Lopaev (ORCID: 0000-0003-4975-3487)

Title

Journal

Author(s)

Publication Date

Probing surface reactivity in plasmas-is it valid to use a constant reaction probability model?

APS Annual Gaseous Electronics Meeting Abstracts

Jean-Paul Booth

Olivier Guaitella

Shu Zhang

Dmitry Lopaev

Sergey Zyryanov

...

2023

Temperature Effects and Mechanisms of the Action of O, N, and F Atoms on SiOCH Nanoporous Dielectrics

РФФИ

Dmitry V Lopaev

Tatyana V Rakhimova

Yuri A Mankelevich

Ekaterina N Voronina

2023

DC Magnetron Sputtering Plasma: VUV Radiation and Discharge Structure

РФФИ

Alexander F Pal

Dmitriy V Lopaev

Alexey N Ryabinkin

Yuriy A Mankelevich

Alexander O Serov

...

2023

Main Aspects of Metallization Formation in Sub-10 nm Integrated Circuit Manufacturing Technology

РФФИ

Ildar I Amirov

Mikhail O Izyumov

Aleksander N Kupriyanov

Dmitry G Voloshin

Dmitry V Lopaev

...

2023

Oxygen atom and ozone kinetics in the afterglow of a pulse-modulated DC discharge in pure O2: an experimental and modelling study of surface mechanisms and ozone vibrational …

Plasma Sources Science and Technology

Jean-Paul Booth

Olivier Guaitella

Shu Zhang

Dmitry Lopaev

S Zyryanov

...

2023/9/25

Analysis of the Possibility of Independent Control of Various Plasma Parameters of an RF Non-Self-Sustained Plasma Discharge with Additional Ionization by an Electron Beam

РФФИ

Maria A Bogdanova

Dmitry V Lopaev

Tatyana V Rakhimova

Olga V Proshina

Alexander T Rakhimov

2023

Sputtering of amorphous Si by low-energy Ar+, Kr+, and Xe+ ions

Journal of Applied Physics

DR Shibanov

DV Lopaev

SM Zyryanov

AI Zotovich

KI Maslakov

...

2023/8/14

N2 PLASMA INTERACTION WITH 2D MoS2: EXPERIMENT AND MODELING

DE Melezhenko

SA Khlebnikov

AA Solovykh

AA Sycheva

Yu A Mankelevich

...

2023

Plasma density determination from ion current to cylindrical Langmuir probe with validation on hairpin probe measurements

Plasma Sources Science and Technology

D Voloshin

T Rakhimova

A Kropotkin

I Amirov

M Izyumov

...

2023/4/11

Effect of H atoms and UV wideband radiation on cured low-k OSG films

Journal of Physics D: Applied Physics

DV Lopaev

AI Zotovich

SM Zyryanov

MA Bogdanova

TV Rakhimova

...

2022/4/1

Dynamics of H atoms surface recombination in low-temperature plasma

Journal of Applied Physics

V Gubarev

D Lopaev

A Zotovich

V Medvedev

P Krainov

...

2022/11/21

Effect of an electron beam on a dual-frequency capacitive rf plasma: experiment and simulation

Plasma Sources Science and Technology

M Bogdanova

D Lopaev

A Zotovich

O Proshina

T Rakhimova

...

2022/8/30

Study of H, N, and O atom interaction with quasi-two-dimensional molybdenum disulfide

Technical Physics Letters

DE Melezhenko

DV Lopaev

AI Zotovich

EN Voronina

2022

Quenching of O2 (b1Σg+) by O (3P) atoms. Effect of gas temperature

Plasma Sources Science and Technology

Jean-Paul Booth

A Chatterjee

O Guaitella

D Lopaev

S Zyryanov

...

2022/6/30

Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission

ACS Applied Electronic Materials

Alexey I Zotovich

Sergey M Zyryanov

Dmitry V Lopaev

Askar A Rezvanov

Ahmed G Attallah

...

2022/6/8

Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam

Journal of Physics D: Applied Physics

AI Zotovich

DV Lopaev

MA Bogdanova

SM Zyryanov

AT Rakhimov

2022/5/23

Absolute O atom density measurements by actinometry: comparison to cavity ring-down spectroscopy

APS Annual Gaseous Electronics Meeting Abstracts

Edmond Baratte

Andrey Volynets

Dmitry Lopaev

Cherif Si Moussi

Jean-Paul Booth

...

2021

‘Virtual IED sensor’for df rf CCP discharges

Plasma Sources Science and Technology

M Bogdanova

D Lopaev

T Rakhimova

D Voloshin

A Zotovich

...

2021/7/8

Filling the gaps in our understanding of plasmas in simple diatomic gases-combining a DC plasma in pure O2 with multiple advanced diagnostics for experimental validation of …

Jean-Paul Booth

A Chatterjee

O Guaitella

D Lopaev

S Zyryanov

...

2021/3/8

Damage to porous SiCOH low-k dielectrics by O, N and F atoms at lowered temperatures

Journal of Physics D: Applied Physics

DV Lopaev

SM Zyryanov

AI Zotovich

TV Rakhimova

Yu A Mankelevich

...

2020/2/24

See List of Professors in Dmitry Lopaev (ORCID: 0000-0003-4975-3487) University(Moscow State University)

Co-Authors

H-index: 74
David Carroll

David Carroll

Wake Forest University

H-index: 25
Alexander Popov

Alexander Popov

Moscow State University

H-index: 17
Mikhail Krishtab

Mikhail Krishtab

Katholieke Universiteit Leuven

H-index: 11
A I. Zotovich

A I. Zotovich

Moscow State University

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