A I. Zotovich

A I. Zotovich

Moscow State University

H-index: 11

Europe-Russia

About A I. Zotovich

A I. Zotovich, With an exceptional h-index of 11 and a recent h-index of 10 (since 2020), a distinguished researcher at Moscow State University, specializes in the field of plasma physics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Publisher's Note:“Dynamics of H atoms surface recombination in low-temperature plasma”[J. Appl. Phys. 132, 193301 (2022)]

N2 PLASMA INTERACTION WITH 2D MoS2: EXPERIMENT AND MODELING

Sputtering of amorphous Si by low-energy Ar+, Kr+, and Xe+ ions

Plasma density determination from ion current to cylindrical Langmuir probe with validation on hairpin probe measurements

Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam

Effect of H atoms and UV wideband radiation on cured low-k OSG films

Study of H, N, and O atom interaction with quasi-two-dimensional molybdenum disulfide

Dynamics of H atoms surface recombination in low-temperature plasma

A I. Zotovich Information

University

Moscow State University

Position

___

Citations(all)

380

Citations(since 2020)

315

Cited By

169

hIndex(all)

11

hIndex(since 2020)

10

i10Index(all)

12

i10Index(since 2020)

10

Email

University Profile Page

Moscow State University

A I. Zotovich Skills & Research Interests

plasma physics

Top articles of A I. Zotovich

Publisher's Note:“Dynamics of H atoms surface recombination in low-temperature plasma”[J. Appl. Phys. 132, 193301 (2022)]

Authors

V Gubarev,D Lopaev,A Zotovich,V Medvedev,P Krainov,D Astakhov,S Zyryanov

Journal

Journal of Applied Physics

Published Date

2023/1/14

This article was originally published online on 15 November 2022 with a spelling error for the second author. The authores name is correct as it appears above. All online versions of this article were corrected on 18 November 2022; the article is correct as it appears in the printed version of the journal.

N2 PLASMA INTERACTION WITH 2D MoS2: EXPERIMENT AND MODELING

Authors

DE Melezhenko,SA Khlebnikov,AA Solovykh,AA Sycheva,Yu A Mankelevich,DV Lopaev,AI Zotovich,EN Voronina

Published Date

2023

This work presents the results of experimental and theoretical study of direct and remote N 2 plasma interaction with MoS 2 films. Experimental data obtained with the use of the spectroscopic ellipsometry, Raman, EDS/XRF and XPS spectroscopy methods are analyzed and compared with DFT-based static and dynamic simulations of the N and N 2+ interactions with MoS 2 monolayers. Direct plasma treatment even at low ion energy induces the removal of the uppermost layer of MoS 2, while remote N 2 plasma causes the appearance of a modified surface layer with Mo-N bonding. Our static and dynamic DFT simulation reveal that incident thermal N (4 S) atoms are scattered by the chemically inert MoS 2 surface without defects. Ground state and electronically excited thermal N atoms are readily absorbed within S-vacancies. Such N adatoms could recombine with incident atoms producing a volatile N 2 molecule …

Sputtering of amorphous Si by low-energy Ar+, Kr+, and Xe+ ions

Authors

DR Shibanov,DV Lopaev,SM Zyryanov,AI Zotovich,KI Maslakov,AT Rakhimov

Journal

Journal of Applied Physics

Published Date

2023/8/14

Atomic layer plasma technologies require localizing ions’ impact within nanometers up to an atomic layer. The possible way to achieve this is the decrease in the ion energy up to surface binding energy. At such low ion kinetic energies, the impact of different plasma effects, causing the surface modification, can be of the same order as kinetic ones. In this work, we studied the sputtering of amorphous silicon films by Ar+, Kr+, and Xe+ ions at energies of 20–200eV under the low-pressure inductively coupled plasma discharge in pure argon, krypton, and xenon, respectively, at a plasma density of 1–1.5× 1010 cm− 3. Under the plasma conditions, a high asymmetry of discharge allowed to form ion flux energy distribution functions with narrow energy peak (5±2 eV full width at half maximum). Real time in situ control over the ion composition and flux as well as the sputtering rate (the ratio of the film thickness change to …

Plasma density determination from ion current to cylindrical Langmuir probe with validation on hairpin probe measurements

Authors

D Voloshin,T Rakhimova,A Kropotkin,I Amirov,M Izyumov,D Lopaev,A Zotovich,S Ziryanov

Journal

Plasma Sources Science and Technology

Published Date

2023/4/11

Numerical and analytical approaches to plasma density determination from the ion current to cylindrical Langmuir probe are validated on hairpin probe measurements. An argon inductively coupled plasma discharge in a pressure range from 4.5 mTorr to 27 mTorr is studied. The discharge input power is varied in the range from 200 to 800 W, giving a plasma density in the range from 10 9 to 10 11 cm− 3. The approaches used for plasma density determination are analytical collisionless orbital motion limit theory, fluid semianalytical model of ion radial motion with ion collisions and particle-in-cell with a Monte Carlo collisions model of ion current collection by the cylindrical Langmuir probe. The relative error of different models is shown. The ion collisions should be taken into account, even at relatively low pressures, in order to get a reliable plasma density value from the ion current to the Langmuir probe.

Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam

Authors

AI Zotovich,DV Lopaev,MA Bogdanova,SM Zyryanov,AT Rakhimov

Journal

Journal of Physics D: Applied Physics

Published Date

2022/5/23

Radio-frequency (rf) plasma with additional ionization by an electron beam (EB) is considered as a possible method for the independent control of plasma density, mean electron energy and mean ion energy. In this study, spatial transition from EB to rf-power-controlled dual-frequency capacitively coupled plasma (DFCCP) was studied using the following movable diagnostics: Langmuir and hairpin probes, a retarding field energy analyzer and optical emission spectroscopy. The beam (1.1–1.4 keV) is generated by a runaway EB module placed near the plasma chamber wall, while the plasma transition is caused by EB degradation with the distance from the EB module. The study was conducted in Ar at 200 and 400 mTorr gas pressures in 81 and 12 MHz DFCCP. When the EB is on, a significant decrease in the mean electron energy is observed, from 6 eV in the rf plasma down to 0.2–0.8 eV in the EB plasma. The …

Effect of H atoms and UV wideband radiation on cured low-k OSG films

Authors

DV Lopaev,AI Zotovich,SM Zyryanov,MA Bogdanova,TV Rakhimova,YA Mankelevich,NN Novikova,DS Seregin,AS Vishnevskiy,KA Vorotilov,Xiaoping Shi,MR Baklanov

Journal

Journal of Physics D: Applied Physics

Published Date

2022/4/1

Effects of hydrogen atoms and UV radiation (λ> 210 nm) on nanoporous organosilicate glass (OSG) low-k films are studied in the temperature range from 20 C to 300 C. The purpose of the study is to understand the mechanisms of low-k films modification that can happen during the cleaning from carbon containing residues formed from sacrificial porogen and accumulated during the air storage. It is shown that exposure of low-k films to hydrogen atoms at low temperature leads to slight modification of hydrocarbon bonds in hydrocarbon residues not bonded to Si. At high temperature (T⩾ 300 C), the relative concentration of–CH x bonds changes in a complex way and depends on the amount and structure of the carbon-containing compounds. The general trend is relatively rapid decrease of–CH 2 bonds concentration, while the terminal–CH 3 groups are more stable. Temperature also initiates the reaction of …

Study of H, N, and O atom interaction with quasi-two-dimensional molybdenum disulfide

Authors

DE Melezhenko,DV Lopaev,AI Zotovich,EN Voronina

Journal

Technical Physics Letters

Published Date

2022

Owing to a unique combination of electronic, optical, mechanical, and thermal properties (including high carrier mobility, adjustable bandgap width, etc.), quasitwo-dimensional molybdenum disulfide MoS2 is presently considered to be one of the most promising semiconductor materials for nanoelectronic elements [1–3]. Lowtemperature plasma is used widely in the fabrication of electronic elements for etching, doping, surface cleaning, etc. However, active plasma particles (ions and radicals) may cause significant damage to ultrathin materials, thus inducing unwanted changes of both their structure and properties [1, 4, 5]. Therefore, a thorough analysis of effects induced in such films by both radicals and ions is needed to develop a reliable technology for processing of quasi-twodimensional materials.In the present study, the effect of O, N, and H atoms on ultrathin MoS2 films is examined experimentally to identify variations of their structure and optical properties induced in the process, and the specifics of film modification under the influence of low-energy atoms and ions are analyzed. A test stand with a remote source of inductively coupled plasma (ICP) with a frequency of 13.56 MHz, which was positioned in a quartz tube 84cm in length with an inner diameter of 16mm, was used to irradiate MoS2 films with O, N, and H atoms. A flux of O, N, and H atoms, which were produced as a result of dissociation of molecules in passage of O2, N2, and H2 gases through the ICP discharge region (power: 200W; pressure: 100mTorr; gas flow: 20 sccm), entered a separate quartz tube (length: 60cm; inner diameter: 8cm) that contained the samples. Owing to …

Dynamics of H atoms surface recombination in low-temperature plasma

Authors

V Gubarev,D Lopaev,A Zotovich,V Medvedev,P Krainov,D Astakhov,S Zyryanov

Journal

Journal of Applied Physics

Published Date

2022/11/21

The dynamics of H atom recombination on materials of interest for a EUV lithographer was studied under a long-term low-pressure H 2 plasma exposure. The similarity of the experimental plasma with the typical EUV-induced plasma over the multilayer mirrors surface of the EUV lithographic machine is demonstrated by means of 2D PIC MC simulation. The measurement of the temporal dynamics of the H atom surface loss probability (γ H) is chosen for testing the surface modification during the treatment. Time-resolved actinometry of H atoms with Kr as the actinometer gas was used to detect the dynamics of the H-atom loss probability on the surface of Al, Ru, RVS, and SiO 2. It is demonstrated that significant changes of the materials surface occur only at the very beginning of the treatment and are due to surface heating and cleaning effects. After that no changes in the γ H are found, indicating that the surface stays …

Effect of an electron beam on a dual-frequency capacitive rf plasma: experiment and simulation

Authors

M Bogdanova,D Lopaev,A Zotovich,O Proshina,T Rakhimova,S Zyryanov,A Rakhimov

Journal

Plasma Sources Science and Technology

Published Date

2022/8/30

One of the crucial challenges facing modern microelectronics is to provide plasma surface treatment at the single atomic level. To minimize defects in the underlying layers, these processes require ions with very low energies—lower than in conventional radio-frequency (rf) plasma and close to the binding energy of atoms. A conventional rf dual-frequency capacitively coupled plasma (df CCP) discharge with additional ionization by an electron beam is considered as a possible solution to this problem. This paper contains a study on the electron beam effect on 81 & 12 MHz plasma parameters such as electron energy probability function, plasma density, electron temperature and ion energy distribution at an rf-biased electrode. The experimental part of the study includes measurements carried out in an asymmetric rf df CCP discharge in Ar at 100 mTorr pressure using a Langmuir probe, a hairpin-probe, and a …

Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission

Authors

Alexey I Zotovich,Sergey M Zyryanov,Dmitry V Lopaev,Askar A Rezvanov,Ahmed G Attallah,Maciej O Liedke,Maik Butterling,Maria A Bogdanova,Alexey S Vishnevskiy,Dmitry S Seregin,Dmitry A Vorotyntsev,Alexander P Palov,Eric Hirschmann,Andreas Wagner,Sergej Naumov,Konstantin A Vorotilov,Tatyana V Rakhimova,Alexander T Rakhimov,Mikhail R Baklanov

Journal

ACS Applied Electronic Materials

Published Date

2022/6/8

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-k (ULK) SiCOH films (k = 2.33) containing both methyl terminal and methylene bridging groups by vacuum ultraviolet (VUV) emission from Xe plasma is studied. The temporal evolution of chemical composition, internal defects, and morphological properties (pore structure transformation) is studied by using Fourier transform infrared spectroscopy, in situ laser ellipsometry, spectroscopic ellipsometry, ellipsometric porosimetry (EP), positron-annihilation lifetime spectroscopy (PALS), and Doppler broadening positron-annihilation spectroscopy. Application of the different advanced diagnostics allows making conclusions on the dynamics of the chemical composition and pore structure. The time frame of the VUV exposure in the current investigation can be divided into two phases. During the first short phase, film loses almost all …

‘Virtual IED sensor’for df rf CCP discharges

Authors

M Bogdanova,D Lopaev,T Rakhimova,D Voloshin,A Zotovich,S Zyryanov

Journal

Plasma Sources Science and Technology

Published Date

2021/7/8

Ion-assisted surface processes are the basis of modern plasma processing. Ion energy distribution (IED) control is critical for precise material modification, especially in atomic-level technologies such as atomic layer etching. Since this control should be done in'real time', it requires' real-time'feedback using fast process sensors. In the general case of an industrial plasma reactor, when direct IED measurement is not possible, the IED can be estimated using the concept of a'virtual IED sensor'. In this paper, a similar'virtual IED sensor'is considered using an asymmetric dual-frequency (df) rf CCP discharge as an example. It is based on a fast calculation method of the IED at an rf-biased electrode. This approach uses the experimentally measured sheath voltage waveform and plasma density (or ion flux) as input data, and also includes Monte-Carlo simulation of ion motion in the sheath to take into account the effect of …

Electron energy probability function in plasma controlled by high-energy run-away electrons

Authors

DV Lopaev,MA Bogdanova,AV Volynets,AI Zotovich,SM Zyryanov

Journal

Plasma Sources Science and Technology

Published Date

2020/2/24

The electron energy probability function (EEPF) probe measurements in cold plasma controlled by high-energy (0.5–1 keV) run-away electrons generated in an'open-discharge'configuration are presented in this paper. High plasma stability along with the second harmonic lock-in measurement method provide a sufficiently high accuracy of the EEPF measurements which makes it possible to thoroughly study the features of both cold plasma and the probe method itself. The experiments have been carried out in pure gases: Ar, He, O 2 and H 2. The run-away electron beam is revealed to produce a lot of cold electrons in each gas and the EEPF is Maxwellian with T e about few tens of meV (which is slightly higher than the gas temperature). It is shown that an EEPF can be correctly measured under these conditions if the modulation amplitude and, accordingly, the energy resolution of the method is less than the …

Pore sealing mechanism in OSG low‐k films under ion bombardment

Authors

Ekaterina N Voronina,Anastasia A Sycheva,Dmitry V Lopaev,Tatyana V Rakhimova,Alexander T Rakhimov,Olga V Proshina,Dmitry G Voloshin,Sergey M Zyryanov,Alexey I Zotovich,Yuri A Mankelevich

Journal

Plasma Processes and Polymers

Published Date

2020/2

Organosilicate glass (OSG) nanoporous films with a low dielectric constant (low‐k) are used as interlayer‐dielectric insulators for advanced interconnects of ultra‐large‐scale integration devices. Plasma treatment of these materials can lead to their degradation resulting in increasing k‐value and reducing lifetime and reliability. However, for some OSG films, the densification of the uppermost surface layer and pore sealing was observed under ion irradiation. This paper presents the results of a combined experimental and modeling study of mechanisms of low‐k film densification by ion bombardment depending on the film‐pore size, ion type, and energy. The obtained results reveal that experimentally observed densification and pore sealing of uppermost layers of OSG films occur via collapse of near‐surface pores under the impact of energetic ions.

Experimental and PIC MCC study of electron cooling—re-heating and plasma density decay in low pressure rf ccp argon afterglow

Authors

OV Proshina,TV Rakhimova,AS Kovalev,AN Vasilieva,AI Zotovich,SM Zyryanov,AT Rakhimov

Journal

Plasma Sources Science and Technology

Published Date

2020/1/28

In this work, experimental and theoretical study of pulsed discharge in argon has been carried out. The experimental data on the dynamics of electron density, electron temperature, and plasma potential have been obtained by probe measurements (using hairpin and Langmuir probes) in the afterglow between two RF pulses. This dynamics is thoroughly analyzed by comparison with the results of the kinetic PIC MC simulations. The main processes that cause electron cooling have been revealed for two different time stages. The first afterglow stage is characterized by the rapid decrease of the electron temperature. During this stage, inelastic electron collisions with Ar atoms in the ground state play an important role in the electron cooling. During the second long-scale stage, only diffusion along the electron energy scale via Coulomb or elastic collisions can provide the observed effect of the gradual electron cooling …

Damage to porous SiCOH low-k dielectrics by O, N and F atoms at lowered temperatures

Authors

DV Lopaev,SM Zyryanov,AI Zotovich,TV Rakhimova,Yu A Mankelevich,EN Voronina

Journal

Journal of Physics D: Applied Physics

Published Date

2020/2/24

Information on the degradation of porous organosilicate glasses (OSGs) by active radicals and atoms is of high importance for their integration as low-k dielectrics in the next generation of ultra large scale integration (ULSI) production. The films' degradation is caused by depletion of coverage of the pore surface methyl. OSG samples with differing porosities and pore sizes were treated by O, N, and F atoms at lowered temperatures (down to− 45 С) downstream of O 2, N 2, and SF 6 inductively coupled plasma discharges, respectively. It has been shown that lowering the temperature reduces film degradation. In the case of O atoms, this reduction is insignificant, while the effect is much more noticeable for F atoms. In addition, an accumulation of F atoms forms a fluorocarbon layer during F atom treatment. The accumulated fluorine can interact with surface Si atoms, giving rise to film etching. The film degradation under …

See List of Professors in A I. Zotovich University(Moscow State University)

A I. Zotovich FAQs

What is A I. Zotovich's h-index at Moscow State University?

The h-index of A I. Zotovich has been 10 since 2020 and 11 in total.

What are A I. Zotovich's top articles?

The articles with the titles of

Publisher's Note:“Dynamics of H atoms surface recombination in low-temperature plasma”[J. Appl. Phys. 132, 193301 (2022)]

N2 PLASMA INTERACTION WITH 2D MoS2: EXPERIMENT AND MODELING

Sputtering of amorphous Si by low-energy Ar+, Kr+, and Xe+ ions

Plasma density determination from ion current to cylindrical Langmuir probe with validation on hairpin probe measurements

Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam

Effect of H atoms and UV wideband radiation on cured low-k OSG films

Study of H, N, and O atom interaction with quasi-two-dimensional molybdenum disulfide

Dynamics of H atoms surface recombination in low-temperature plasma

...

are the top articles of A I. Zotovich at Moscow State University.

What are A I. Zotovich's research interests?

The research interests of A I. Zotovich are: plasma physics

What is A I. Zotovich's total number of citations?

A I. Zotovich has 380 citations in total.

What are the co-authors of A I. Zotovich?

The co-authors of A I. Zotovich are Ivo Rangelow Prof. Dr., Konstantin Maslakov (Константин Маслаков), Dmitry Lopaev (ORCID: 0000-0003-4975-3487), Vladimir Samara, Askar Rezvanov, Konstantin Kurchikov.

    Co-Authors

    H-index: 44
    Ivo Rangelow Prof. Dr.

    Ivo Rangelow Prof. Dr.

    Technische Universität Ilmenau

    H-index: 35
    Konstantin Maslakov (Константин Маслаков)

    Konstantin Maslakov (Константин Маслаков)

    Moscow State University

    H-index: 30
    Dmitry Lopaev (ORCID: 0000-0003-4975-3487)

    Dmitry Lopaev (ORCID: 0000-0003-4975-3487)

    Moscow State University

    H-index: 9
    Vladimir Samara

    Vladimir Samara

    University of Notre Dame

    H-index: 7
    Askar Rezvanov

    Askar Rezvanov

    Moscow Institute of Physics and Technology

    H-index: 7
    Konstantin Kurchikov

    Konstantin Kurchikov

    Moscow State University

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