Askar Rezvanov

About Askar Rezvanov

Askar Rezvanov, With an exceptional h-index of 7 and a recent h-index of 6 (since 2020), a distinguished researcher at Moscow Institute of Physics and Technology, specializes in the field of Solid Statate Physics, low-k dielectrics, plasma etching, atomic layer deposition.

His recent articles reflect a diverse array of research interests and contributions to the field:

Computer Modeling of Plasma-Enhanced Atomic Layer Deposition of HfO2 and ZrO2

Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide

Hybrid Organosilicate Low-k Dielectrics with Benzene Bridge Groups with Increased Mechanical Properties and Small Pore Size for Modern BEOL Metallization

Methylated porous low-k materials: critical properties and plasma resistance

Dielectric Barrier in the Subtractive Process of Formation of a Copper Metallization System

Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide

 Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system

МОДЕЛИРОВАНИЕ РАСПРЕДЕЛЕНИЯ ЭЛЕКТРИЧЕСКИХ ПОЛЕЙ В СТРУКТУРЕ С ЭФФЕКТОМ ПАМЯТИ С ПОРИСТЫМ LOWK-ДИЭЛЕКТРИКОМ В КАЧЕСТВЕ БУФЕРНОГО СЛОЯ

Askar Rezvanov Information

University

Position

PhD

Citations(all)

131

Citations(since 2020)

114

Cited By

48

hIndex(all)

7

hIndex(since 2020)

6

i10Index(all)

4

i10Index(since 2020)

4

Email

University Profile Page

Moscow Institute of Physics and Technology

Google Scholar

View Google Scholar Profile

Askar Rezvanov Skills & Research Interests

Solid Statate Physics

low-k dielectrics

plasma etching

atomic layer deposition

Top articles of Askar Rezvanov

Title

Journal

Author(s)

Publication Date

Computer Modeling of Plasma-Enhanced Atomic Layer Deposition of HfO2 and ZrO2

Russian Microelectronics

SS Zyuzin

EA Ganykina

AA Rezvanov

Ya G Zasseev

VA Gvozdev

...

2023/12

Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide

Russian Microelectronics

AA Reznik

AA Rezvanov

SS Zyuzin

2023/12

Hybrid Organosilicate Low-k Dielectrics with Benzene Bridge Groups with Increased Mechanical Properties and Small Pore Size for Modern BEOL Metallization

РФФИ

Askar A Rezvanov

Andrey A Lomov

Alexey S Vishnevskiy

Konstantin A Vorotilov

Dmitry S Seregin

...

2023

Methylated porous low-k materials: critical properties and plasma resistance

AA Rezvanov

AV Miakonkikh

AS Vishnevskiy

DS Seregin

KA Vorotilov

...

2022/1/30

Dielectric Barrier in the Subtractive Process of Formation of a Copper Metallization System

Russian Microelectronics

AA Orlov

AA Rezvanov

VA Gvozdev

GA Orlov

DS Seregin

...

2022/12

Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide

Ekaterina A Ganykina

Askar A Rezvanov

Yevgeniy S Gornev

2022/1/30

 Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system

Modern Electronic Materials

Andrey A Orlov

Askar A Rezvanov

2022/10/20

МОДЕЛИРОВАНИЕ РАСПРЕДЕЛЕНИЯ ЭЛЕКТРИЧЕСКИХ ПОЛЕЙ В СТРУКТУРЕ С ЭФФЕКТОМ ПАМЯТИ С ПОРИСТЫМ LOWK-ДИЭЛЕКТРИКОМ В КАЧЕСТВЕ БУФЕРНОГО СЛОЯ

Наноиндустрия

АНДРЕЙ АЛЕКСЕЕВИЧ ОРЛОВ

ЕКАТЕРИНА АНДРЕЕВНА ГАНЫКИНА

АСКАР АНВАРОВИЧ РЕЗВАНОВ

2022

Benzene bridged hybrid organosilicate films with improved stiffness and small pore size

Materials Chemistry and Physics

AA Rezvanov

AS Vishnevskiy

DS Seregin

Dieter Schneider

AA Lomov

...

2022/10/15

Атомно-слоевое осаждение тонких пленок оксида гафния с использованием установки «Изофаз Т. 200-01»

Наноиндустрия

СЕРГЕЙ СЕРГЕЕВИЧ ЗЮЗИН

ЯСОН ГЕОРГИЕВИЧ ЗАССЕЕВ

АСКАР АНВАРОВИЧ РЕЗВАНОВ

ВИТАЛИЙ ВЯЧЕСЛАВОВИЧ ПАНИН

ВЛАДИМИР АЛЕКСАНДРОВИЧ ГВОЗДЕВ

...

2022

Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission

ACS Applied Electronic Materials

Alexey I Zotovich

Sergey M Zyryanov

Dmitry V Lopaev

Askar A Rezvanov

Ahmed G Attallah

...

2022/6/8

ФИЗИЧЕСКАЯ МОДЕЛЬ РЕЗИСТИВНОГО ПЕРЕКЛЮЧЕНИЯ В RERAM-СТРУКТУРАХ НА ОСНОВЕ ОКСИДА ГАФНИЯ

Наноиндустрия

ЕКАТЕРИНА АНДРЕЕВНА ГАНЫКИНА

АСКАР АНВАРОВИЧ РЕЗВАНОВ

ЕВГЕНИЙ СЕРГЕЕВИЧ ГОРНЕВ

2022

Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system

Sergey S Zyuzin

Yason G Zasseev

Askar A Rezvanov

Vitaliy V Panin

Vladimir A Gvozdev

...

2022/1/30

Accounting for the Porosity of the Material in the Simulation of the Time-Dependent Dielectric Breakdown in the Metallization System of Integrated Circuits

Russian Microelectronics

AA Orlov

EA Ganykina

AA Rezvanov

2022/12

Simulation of the time dependent dielectric breakdown of a porous dielectric in the metallization system of integrated circuits of the modern topological level

Materials of Electronics Engineering

AA Orlov

AA Rezvanov

2021/8

Mechanical Properties of Low-k Dielectric Deposited on Subtractively Patterned Cu Lines for Advanced Interconnects

IS Ovchinnikov

DS Seregin

DA Abdullaev

KA Vorotilov

AA Rezvanov

...

2021/7/6

Исследование кинетики взаимодействия химически активных частиц с поверхностью кремния в процессе глубокого криогенного травления

Наноиндустрия

ЯРОСЛАВ АНДРЕЕВИЧ МИРОШКИН

Аскар Анварович Резванов

2020

Формирование диффузионных барьеров в системе медной металлизации в методе gap filling

Наноиндустрия

АНДРЕИ АЛЕКСЕЕВИЧ ОРЛОВ

АСКАР АНВАРОВИЧ РЕЗВАНОВ

ВЛАДИМИР АЛЕКСАНДРОВИЧ ГВОЗДЕВ

ПАВЕЛ ИГОРЕВИЧ КУЗНЕЦОВ

ДМИТРИИ СЕРГЕЕВИЧ СЕРЕГИН

...

2020

Исследование термических эффектов в HfO2 RRAM-структурах в процессе Reset

Наноиндустрия

Екатерина Андреевна Ганыкина

Евгений Сергеевич Горнев

Аскар Анварович Резванов

2020

Evaluation of mechanical properties of porous OSG films by PFQNM AFM and benchmarking with traditional instrumentation

Langmuir

IS Ovchinnikov

AS Vishnevskiy

DS Seregin

AA Rezvanov

Dieter Schneider

...

2020/7/24

See List of Professors in Askar Rezvanov University(Moscow Institute of Physics and Technology)