Chao Liu

Chao Liu

Shandong University

H-index: 24

Asia-China

About Chao Liu

Chao Liu, With an exceptional h-index of 24 and a recent h-index of 18 (since 2020), a distinguished researcher at Shandong University, specializes in the field of III-Nitrides, Power Electronics, Device integration, LED, MOCVD.

His recent articles reflect a diverse array of research interests and contributions to the field:

Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings

Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer

Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface

Simultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes

High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes

Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a pn junction hole accelerator

Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

Chao Liu Information

University

Position

; HKUST; EPFL

Citations(all)

1598

Citations(since 2020)

1048

Cited By

997

hIndex(all)

24

hIndex(since 2020)

18

i10Index(all)

35

i10Index(since 2020)

24

Email

University Profile Page

Shandong University

Google Scholar

View Google Scholar Profile

Chao Liu Skills & Research Interests

III-Nitrides

Power Electronics

Device integration

LED

MOCVD

Top articles of Chao Liu

Title

Journal

Author(s)

Publication Date

Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings

Japanese Journal of Applied Physics

Hongjie Shao

Yongchen Ji

Xuyang Liu

Heng Wang

Chao Liu

2024/4/17

Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer

IEEE Transactions on Electron Devices

Ying Qi

Wentao Tian

Mengran Liu

Shuti Li

Chao Liu

2024/3/29

Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

Solid-State Electronics

Heng Zhou

Yuanjie Lv

Chao Liu

Ming Yang

Zhaojun Lin

...

2024/2/1

Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface

Optical Materials Express

Wentao Tian

Mengran Liu

Shuti Li

Chao Liu

2023/8/1

Simultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes

Optical Materials Express

Mengran Liu

Wentao Tian

Chao Liu

2023/8/1

High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes

Materials

Sheng Lin

Tingjun Lin

Wenliang Wang

Chao Liu

Yao Ding

2023/6/24

Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a pn junction hole accelerator

Optical Materials Express

Wentao Tian

Mengran Liu

Shuti Li

Chao Liu

2023/11/1

Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

IEEE Electron Device Letters

Mingyan Wang

Yuanjie Lv

Heng Zhou

Peng Cui

Chao Liu

...

2023/10/5

A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

IEEE Transactions on Electron Devices

Mingyan Wang

Yuanjie Lv

Heng Zhou

Zuokai Wen

Peng Cui

...

2023/8/21

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

IEEE Journal of the Electron Devices Society

Heng Wang

Sihao Chen

Hang Chen

Chao Liu

2022/6/23

Realization of specific localized surface plasmon resonance in Au-modified Ni nanoplasmonics for efficient detection

Applied Surface Science

Congcong Deng

Fei Chen

Chao Liu

Qing Liu

Kai Chen

...

2022/6/1

Analytical model and design strategy for GaN vertical floating island Schottky diodes

IEEE Transactions on Electron Devices

Xuyang Liu

Sihao Chen

Hang Chen

Yingbin Qiu

Chao Liu

2022/5/11

Enhanced carrier injection in AlGaN-based deep ultraviolet light-emitting diodes by polarization engineering at the LQB/p-EBL interface

IEEE Photonics Journal

Mengran Liu

Chao Liu

2022/4/5

Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded pin junctions

Applied Optics

Yongchen Ji

Mengran Liu

Chao Liu

2022/8/20

Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

Electronics

Jian Yin

Sihao Chen

Hang Chen

Shuti Li

Houqiang Fu

...

2022/6/24

Sheet charge engineering towards an efficient hole injection in 290 nm deep ultraviolet light-emitting diodes

IEEE Photonics Journal

Mengran Liu

Yongchen Ji

Hang Zhou

Changsheng Xia

Zihui Zhang

...

2021/8/4

A review on GaN-based two-terminal devices grown on Si substrates

Yu Zhang

Chao Liu

Min Zhu

Yuliang Zhang

Xinbo Zou

2021/7/15

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Applied Physics Express

Riyaz Abdul Khadar

Alessandro Floriduz

Chao Liu

Reza Soleimanzadeh

Elison Matioli

2021/4/7

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode with p-GaN Shielding Rings

IEEE Transactions on Electron Devices

Sihao Chen

Hang Chen

Yingbin Qiu

Chao Liu

2021/9/14

See List of Professors in Chao Liu University(Shandong University)

Co-Authors

H-index: 38
Niklas Rorsman

Niklas Rorsman

Chalmers tekniska högskola

H-index: 37
Elison Matioli

Elison Matioli

École Polytechnique Fédérale de Lausanne

H-index: 29
Qiang Li

Qiang Li

Cardiff University

H-index: 25
Xingfu Wang

Xingfu Wang

South China Normal University

H-index: 24
Jun Ma

Jun Ma

École Polytechnique Fédérale de Lausanne

H-index: 22
Zhou Yugang

Zhou Yugang

Nanjing University

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