Chao Liu
Shandong University
H-index: 24
Asia-China
Top articles of Chao Liu
Title | Journal | Author(s) | Publication Date |
---|---|---|---|
Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings | Japanese Journal of Applied Physics | Hongjie Shao Yongchen Ji Xuyang Liu Heng Wang Chao Liu | 2024/4/17 |
Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer | IEEE Transactions on Electron Devices | Ying Qi Wentao Tian Mengran Liu Shuti Li Chao Liu | 2024/3/29 |
Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors | Solid-State Electronics | Heng Zhou Yuanjie Lv Chao Liu Ming Yang Zhaojun Lin | 2024/2/1 |
Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface | Optical Materials Express | Wentao Tian Mengran Liu Shuti Li Chao Liu | 2023/8/1 |
Simultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes | Optical Materials Express | Mengran Liu Wentao Tian Chao Liu | 2023/8/1 |
High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes | Materials | Sheng Lin Tingjun Lin Wenliang Wang Chao Liu Yao Ding | 2023/6/24 |
Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a pn junction hole accelerator | Optical Materials Express | Wentao Tian Mengran Liu Shuti Li Chao Liu | 2023/11/1 |
Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT | IEEE Electron Device Letters | Mingyan Wang Yuanjie Lv Heng Zhou Peng Cui Chao Liu | 2023/10/5 |
A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs | IEEE Transactions on Electron Devices | Mingyan Wang Yuanjie Lv Heng Zhou Zuokai Wen Peng Cui | 2023/8/21 |
Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection | IEEE Journal of the Electron Devices Society | Heng Wang Sihao Chen Hang Chen Chao Liu | 2022/6/23 |
Realization of specific localized surface plasmon resonance in Au-modified Ni nanoplasmonics for efficient detection | Applied Surface Science | Congcong Deng Fei Chen Chao Liu Qing Liu Kai Chen | 2022/6/1 |
Analytical model and design strategy for GaN vertical floating island Schottky diodes | IEEE Transactions on Electron Devices | Xuyang Liu Sihao Chen Hang Chen Yingbin Qiu Chao Liu | 2022/5/11 |
Enhanced carrier injection in AlGaN-based deep ultraviolet light-emitting diodes by polarization engineering at the LQB/p-EBL interface | IEEE Photonics Journal | Mengran Liu Chao Liu | 2022/4/5 |
Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded pin junctions | Applied Optics | Yongchen Ji Mengran Liu Chao Liu | 2022/8/20 |
Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling | Electronics | Jian Yin Sihao Chen Hang Chen Shuti Li Houqiang Fu | 2022/6/24 |
Sheet charge engineering towards an efficient hole injection in 290 nm deep ultraviolet light-emitting diodes | IEEE Photonics Journal | Mengran Liu Yongchen Ji Hang Zhou Changsheng Xia Zihui Zhang | 2021/8/4 |
A review on GaN-based two-terminal devices grown on Si substrates | Yu Zhang Chao Liu Min Zhu Yuliang Zhang Xinbo Zou | 2021/7/15 | |
Quasi-vertical GaN-on-Si reverse blocking power MOSFETs | Applied Physics Express | Riyaz Abdul Khadar Alessandro Floriduz Chao Liu Reza Soleimanzadeh Elison Matioli | 2021/4/7 |
Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode with p-GaN Shielding Rings | IEEE Transactions on Electron Devices | Sihao Chen Hang Chen Yingbin Qiu Chao Liu | 2021/9/14 |