Jun Ma
École Polytechnique Fédérale de Lausanne
H-index: 24
Europe-Switzerland
Top articles of Jun Ma
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Design of multi-channel heterostructures for GaN devices | Japanese Journal of Applied Physics | Jinjin Tang Wensong Zou Peng Xiang Kai Cheng Mengyuan Hua | 2024/2/29 |
Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs | IEEE Transactions on Electron Devices | Jiawei Chen Junbo Liu Wensong Zou Jun Ma | 2023/10/27 |
Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs | Japanese Journal of Applied Physics | Wensong Zou Jiawei Chen Junbo Liu Jun Ma | 2023/9/19 |
The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices | Applied Physics Letters | Junbo Liu Wensong Zou Jiawei Chen Mengyuan Hua Di Lu | 2023/9/11 |
Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures | Xinyu Wang Zuoheng Jiang Junting Chen Junlei Zhao Han Wang | 2023/5/28 | |
High performance GaN-on-Si Voltage Sensors-A Review | Junbo Liu Zhaojun Liu Mengyuan Hua Youwei Jia Jun Ma | 2023/4/4 | |
Semiconductor device comprising a three-dimensional field plate | 2022/10/18 | ||
High-performance enhancement-mode AlGaN/GaN multi-channel power transistors | Luca Nela Catherine Erine Jun Ma Halil Kerim Yildirim Remco Van Erp | 2021/5/30 | |
Multi-channel nanowire devices for efficient power conversion | Nature Electronics | L Nela J Ma C Erine P Xiang T-H Shen | 2021/4 |
High-frequency GaN-on-Si power integrated circuits based on tri-anode SBDs | Luca Nela Georgios Kampitsis Halil Kerim Yildirim Remco Van Erp Jun Ma | 2020/9/13 | |
Investigation of p-GaN tri-gate normally-off GaN power MOSHEMTs | Minghua Zhu Jun Ma Elison Matioli | 2020/9/13 | |
Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky barrier diodes | IEEE Transactions on Power Electronics | Luca Nela Remco Van Erp Georgios Kampitsis Halil Kerim Yildirim Jun Ma | 2020/7/9 |
Multi-channel AlGaN/GaN in-plane-gate field-effect transistors | IEEE Electron Device Letters | Catherine Erine Jun Ma Giovanni Santoruvo Elison Matioli | 2020/1/17 |
P-GaN tri-gate MOS structure for normally-off GaN power transistors | IEEE Electron Device Letters | Minghua Zhu Catherine Erine Jun Ma Mohammad Samizadeh Nikoo Luca Nela | 2020/11/10 |
Co-Authors
