Jun Ma

Jun Ma

École Polytechnique Fédérale de Lausanne

H-index: 24

Europe-Switzerland

About Jun Ma

Jun Ma, With an exceptional h-index of 24 and a recent h-index of 20 (since 2020), a distinguished researcher at École Polytechnique Fédérale de Lausanne, specializes in the field of III-nitride materals and devices.

His recent articles reflect a diverse array of research interests and contributions to the field:

Design of multi-channel heterostructures for GaN devices

Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs

Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs

The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices

Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures

High performance GaN-on-Si Voltage Sensors-A Review

Semiconductor device comprising a three-dimensional field plate

High-performance enhancement-mode AlGaN/GaN multi-channel power transistors

Jun Ma Information

University

École Polytechnique Fédérale de Lausanne

Position

PhD candidate

Citations(all)

1306

Citations(since 2020)

976

Cited By

708

hIndex(all)

24

hIndex(since 2020)

20

i10Index(all)

34

i10Index(since 2020)

28

Email

University Profile Page

École Polytechnique Fédérale de Lausanne

Jun Ma Skills & Research Interests

III-nitride materals and devices

Top articles of Jun Ma

Title

Journal

Author(s)

Publication Date

Design of multi-channel heterostructures for GaN devices

Japanese Journal of Applied Physics

Jinjin Tang

Wensong Zou

Peng Xiang

Kai Cheng

Mengyuan Hua

...

2024/2/29

Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs

IEEE Transactions on Electron Devices

Jiawei Chen

Junbo Liu

Wensong Zou

Jun Ma

2023/10/27

Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs

Japanese Journal of Applied Physics

Wensong Zou

Jiawei Chen

Junbo Liu

Jun Ma

2023/9/19

The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices

Applied Physics Letters

Junbo Liu

Wensong Zou

Jiawei Chen

Mengyuan Hua

Di Lu

...

2023/9/11

Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures

Xinyu Wang

Zuoheng Jiang

Junting Chen

Junlei Zhao

Han Wang

...

2023/5/28

High performance GaN-on-Si Voltage Sensors-A Review

Junbo Liu

Zhaojun Liu

Mengyuan Hua

Youwei Jia

Jun Ma

...

2023/4/4

Semiconductor device comprising a three-dimensional field plate

2022/10/18

High-performance enhancement-mode AlGaN/GaN multi-channel power transistors

Luca Nela

Catherine Erine

Jun Ma

Halil Kerim Yildirim

Remco Van Erp

...

2021/5/30

Multi-channel nanowire devices for efficient power conversion

Nature Electronics

L Nela

J Ma

C Erine

P Xiang

T-H Shen

...

2021/4

High-frequency GaN-on-Si power integrated circuits based on tri-anode SBDs

Luca Nela

Georgios Kampitsis

Halil Kerim Yildirim

Remco Van Erp

Jun Ma

...

2020/9/13

Investigation of p-GaN tri-gate normally-off GaN power MOSHEMTs

Minghua Zhu

Jun Ma

Elison Matioli

2020/9/13

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky barrier diodes

IEEE Transactions on Power Electronics

Luca Nela

Remco Van Erp

Georgios Kampitsis

Halil Kerim Yildirim

Jun Ma

...

2020/7/9

Multi-channel AlGaN/GaN in-plane-gate field-effect transistors

IEEE Electron Device Letters

Catherine Erine

Jun Ma

Giovanni Santoruvo

Elison Matioli

2020/1/17

P-GaN tri-gate MOS structure for normally-off GaN power transistors

IEEE Electron Device Letters

Minghua Zhu

Catherine Erine

Jun Ma

Mohammad Samizadeh Nikoo

Luca Nela

...

2020/11/10

See List of Professors in Jun Ma University(École Polytechnique Fédérale de Lausanne)

Jun Ma FAQs

What is Jun Ma's h-index at École Polytechnique Fédérale de Lausanne?

The h-index of Jun Ma has been 20 since 2020 and 24 in total.

What are Jun Ma's top articles?

The articles with the titles of

Design of multi-channel heterostructures for GaN devices

Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs

Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs

The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices

Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures

High performance GaN-on-Si Voltage Sensors-A Review

Semiconductor device comprising a three-dimensional field plate

High-performance enhancement-mode AlGaN/GaN multi-channel power transistors

...

are the top articles of Jun Ma at École Polytechnique Fédérale de Lausanne.

What are Jun Ma's research interests?

The research interests of Jun Ma are: III-nitride materals and devices

What is Jun Ma's total number of citations?

Jun Ma has 1,306 citations in total.

What are the co-authors of Jun Ma?

The co-authors of Jun Ma are Elison Matioli, Qiang Li, Chao Liu, Xinbo Zou.

Co-Authors

H-index: 37
Elison Matioli

Elison Matioli

École Polytechnique Fédérale de Lausanne

H-index: 29
Qiang Li

Qiang Li

Cardiff University

H-index: 24
Chao Liu

Chao Liu

Shandong University

H-index: 19
Xinbo Zou

Xinbo Zou

Shanghai Tech University

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