Niklas Rorsman
Chalmers tekniska högskola
H-index: 38
Europe-Sweden
Top articles of Niklas Rorsman
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs | IEEE Transactions on Components, Packaging and Manufacturing Technology | Andreas Divinyi Torbjörn MJ Nilsson Niklas Rorsman Tobias Kristensen Harald Hultin | 2024/4/15 |
Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Erik Sundin Denis Meledin Mattias Thorsell | 2023/9/18 | |
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs | M Mebarki Ragnar Ferrand-Drake Del Castillo Erik Sundin Denis Meledin Mattias Thorsell | 2023 | |
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization | Semiconductor Science and Technology | Ding-Yuan Chen Axel R Persson Vanya Darakchieva Per O Å Persson Jr-Tai Chen | 2023/9/1 |
Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs | Simulation | Terirama Thingujam Michael J Uren Niklas Rorsman Matthew Smith Andrew Barnes | 2023 |
Observations of very fast electron traps at SiC/high-κ dielectric interfaces | APL Materials | Arnar M Vidarsson Axel R Persson Jr-Tai Chen Daniel Haasmann Jawad Ul Hassan | 2023/11/1 |
Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures | physica status solidi (a) | Ding-Yuan Chen Kai-Hsin Wen Mattias Thorsell Martino Lorenzini Hans Hjelmgren | 2023/8 |
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers | Applied Physics Letters | Alexis Papamichail AR Persson Steffen Richter P Kühne Vallery Stanishev | 2023/4/10 |
Low Al-content n-type AlxGa1− xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition | Vacuum | Vallery Stanishev Nerijus Armakavicius Daniela Gogova Muhammad Nawaz Niklas Rorsman | 2023/11/1 |
Investigation of Isolation Approaches and the Stoichiometry of SiN x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High … | physica status solidi (a) | Björn Hult Mattias Thorsell Jr-Tai Chen Niklas Rorsman | 2023/4 |
Transition Time of GaN HEMT Switches and its Dependence on Device Geometry | Andreas Divinyi Niklas Rorsman Niklas Billström Mattias Thorsell | 2023/9/18 | |
GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications | physica status solidi (a) | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Alexey Pavolotsky Denis Meledin Erik Sundin | 2023/4 |
AlGaN/GaN/AlN ‘Buffer-Free’ High Voltage MISHEMTs with Si-rich and Stoichiometric SiNx First Passivation | Björn Hult Mattias Thorsell Jr-Tai Chen Niklas Rorsman | 2022/6/1 | |
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance | Semiconductor Science and Technology | Ding-Yuan Chen Axel R Persson Kai-Hsin Wen Daniel Sommer Jan Grünenpütt | 2022/1/25 |
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers | Alexis Papamichail Axel R Persson Steffen Ricther Philipp Kühne Per OÅ Persson | 2022/6/1 | |
Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors | Journal of Applied Physics | Isabel Harrysson Rodrigues Niklas Rorsman Andrei Vorobiev | 2022/12/28 |
Considerations in the development of a gate process module for ultra-scaled GaN HEMTs | Ragnar Ferrand-Drake Del Castillo Niklas Rorsman | 2022/6/1 | |
Mg-doping and free-hole properties of hot-wall MOCVD GaN | Journal of Applied Physics | Alexis Papamichail A Kakanakova-Georgieva EÖ Sveinbjörnsson Axel R Persson Björn Hult | 2022/5/14 |
Noise characterization and modeling of GaN-HEMTs at cryogenic temperatures | IEEE Transactions on Microwave Theory and Techniques | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Denis Meledin Erik Sundin Mattias Thorsell | 2022/12/15 |
High voltage and low leakage GaN-on-Sic MISHEMTs on a “buffer-free” heterostructure | IEEE Electron Device Letters | Björn Hult Mattias Thorsell Jr-Tai Chen Niklas Rorsman | 2022/3/31 |
Co-Authors
