Mattias Thorsell
Chalmers tekniska högskola
H-index: 21
Europe-Sweden
Top articles of Mattias Thorsell
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs | IEEE Transactions on Components, Packaging and Manufacturing Technology | Andreas Divinyi Torbjörn MJ Nilsson Niklas Rorsman Tobias Kristensen Harald Hultin | 2024/4/15 |
Method and device for controlling the output efficiency of a plurality of amplifiers | 2024/2/8 | ||
Investigation of Isolation Approaches and the Stoichiometry of SiN x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High … | physica status solidi (a) | Björn Hult Mattias Thorsell Jr-Tai Chen Niklas Rorsman | 2023/4 |
Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements | Tobias Kristensen Andreas Divinyi Johan Bremer Torbjörn MJ Nilsson Mattias Thorsell | 2023/9/18 | |
GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications | physica status solidi (a) | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Alexey Pavolotsky Denis Meledin Erik Sundin | 2023/4 |
Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Erik Sundin Denis Meledin Mattias Thorsell | 2023/9/18 | |
Sub-1-ms instinctual interference adaptive GaN LNA front end with power and linearity tuning | IEEE Transactions on Microwave Theory and Techniques | Jie Yang Baibhab Chatterjee Mohammad Abu Khater Mattias Thorsell Sten E Gunnarsson | 2023/3/7 |
Orthogonal Filter Frequency Followed by LNA Linearity Tuning for Efficient Instinctual GaN Receiver Front-End | IEEE Transactions on Circuits and Systems I: Regular Papers | Jie Yang Baibhab Chatterjee Mohammad Abu Khater Mattias Thorsell Sten E Gunnarsson | 2023/8/25 |
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs | M Mebarki Ragnar Ferrand-Drake Del Castillo Erik Sundin Denis Meledin Mattias Thorsell | 2023 | |
Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures | physica status solidi (a) | Ding-Yuan Chen Kai-Hsin Wen Mattias Thorsell Martino Lorenzini Hans Hjelmgren | 2023/8 |
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers | Applied Physics Letters | Alexis Papamichail AR Persson Steffen Richter P Kühne Vallery Stanishev | 2023/4/10 |
Transition Time of GaN HEMT Switches and its Dependence on Device Geometry | Andreas Divinyi Niklas Rorsman Niklas Billström Mattias Thorsell | 2023/9/18 | |
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance | Semiconductor Science and Technology | Ding-Yuan Chen Axel R Persson Kai-Hsin Wen Daniel Sommer Jan Grünenpütt | 2022/1/25 |
GaN HEMT with superconducting Nb gates for low noise cryogenic applications | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Alexey Pavolotskiy Denis Meledin Erik Sundin | 2022/6/1 | |
AlGaN/GaN/AlN ‘Buffer-Free’ High Voltage MISHEMTs with Si-rich and Stoichiometric SiNx First Passivation | Björn Hult Mattias Thorsell Jr-Tai Chen Niklas Rorsman | 2022/6/1 | |
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers | Alexis Papamichail Axel R Persson Steffen Ricther Philipp Kühne Per OÅ Persson | 2022/6/1 | |
Miniaturization of Multi-Functional Filters Using Spiral Resonators Coupled to Their Scaled Negative Images | Zahra Manzoor Mohammad Abu Khater Mattias Thorsell Sten Gunnarsson Brian Edward | 2022/4/27 | |
High voltage and low leakage GaN-on-Sic MISHEMTs on a “buffer-free” heterostructure | IEEE Electron Device Letters | Björn Hult Mattias Thorsell Jr-Tai Chen Niklas Rorsman | 2022/3/31 |
Noise characterization and modeling of GaN-HEMTs at cryogenic temperatures | IEEE Transactions on Microwave Theory and Techniques | Mohamed Aniss Mebarki Ragnar Ferrand-Drake Del Castillo Denis Meledin Erik Sundin Mattias Thorsell | 2022/12/15 |
Analyzing The Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model | Ankur Prasad Mattias Thorsell Herbert Zirath Christian Fager | 2021/12/17 |
Co-Authors
