Yuriy I. Mazur

Yuriy I. Mazur

University of Arkansas

H-index: 37

North America-United States

About Yuriy I. Mazur

Yuriy I. Mazur, With an exceptional h-index of 37 and a recent h-index of 18 (since 2020), a distinguished researcher at University of Arkansas, specializes in the field of Physics, optical spectroscopy, semiconductor nanostructures, nanotehnology, Material science.

His recent articles reflect a diverse array of research interests and contributions to the field:

The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Effects of ion implantation with arsenic and boron in germanium-tin layers

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

Growth of germanium thin film on sapphire by molecular beam epitaxy

Yuriy I. Mazur Information

University

Position

Institute for Nanoscience and Engineering

Citations(all)

6123

Citations(since 2020)

1770

Cited By

1874

hIndex(all)

37

hIndex(since 2020)

18

i10Index(all)

168

i10Index(since 2020)

55

Email

University Profile Page

University of Arkansas

Google Scholar

View Google Scholar Profile

Yuriy I. Mazur Skills & Research Interests

Physics

optical spectroscopy

semiconductor nanostructures

nanotehnology

Material science

Top articles of Yuriy I. Mazur

Title

Journal

Author(s)

Publication Date

The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy

RSC advances

Calbi Gunder

Fernando Maia de Oliveira

Emmanuel Wangila

Hryhorii Stanchu

Mohammad Zamani-Alavijeh

...

2024

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Crystals

Emmanuel Wangila

Calbi Gunder

Petro M Lytvyn

Mohammad Zamani-Alavijeh

Fernando Maia de Oliveira

...

2024/4/28

Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells

Surfaces and Interfaces

Fernando M de Oliveira

Andrian V Kuchuk

Pijush K Ghosh

Morgan E Ware

Yuriy I Mazur

...

2024/4/14

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

IEEE Transactions on Electron Devices

Satish Shetty

Savannah R Eisner

Ayesha Hassan

Anand Lalwani

Dinesh Baral

...

2024/4/8

Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Journal of Physics D: Applied Physics

Hryhorii Stanchu

Serhii Kryvyi

Stephen Margiotta

Matthew Cook

Joshua Grant

...

2024/3/28

Effects of ion implantation with arsenic and boron in germanium-tin layers

Journal of Vacuum Science & Technology B

Sylvester Amoah

Hryhorii Stanchu

Grey Abernathy

Serhii Kryvyi

Fernando M De Oliveira

...

2024/5/1

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

IEEE Sensors Journal

Satish Shetty

Fernando Maia De Oliveira

Yuriy I Mazur

H Alan Mantooth

Gregory J Salamo

2024/1/3

Growth of germanium thin film on sapphire by molecular beam epitaxy

Emmanuel Wangila

Peter Lytvyn

Hryhorii Stanchu

Calbi Gunder

Fernando Maia De Oliveira

...

2023/9/28

Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells

Journal of Crystal Growth

Solomon Ojo

Hryhorii Stanchu

Sudip Acharya

Abdulla Said

Sylvester Amoah

...

2023/3/1

Temperature dependent behavior of sub-monolayer quantum dot based solar cell

Sol. Energy Mater. Sol. Cells.

N. Alnami

R. Kumar

S. K. Saha

A. Alnami

M. E. Ware

...

2023/8/15

High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon

IEEE Journal of Quantum Electronics

Daqian Guo

Jian Huang

Mourad Benamara

Yuriy I Mazur

Zhuo Deng

...

2023/1/23

Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Crystal Growth & Design

Rahul Kumar

Samir K Saha

Andrian Kuchuk

Fernando Maia de Oliveira

Krista R Khiangte

...

2023/9/18

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

Applied Surface Science

Jingtao Liu

Hang Li

Xiaohui Liu

Ying Wang

Yingnan Guo

...

2023/11/1

Photoconductivity of GeSn thin films with up to 15% Sn content

Physical Review Materials

Serhiy Kondratenko

Oleksandr Datsenko

Andrian V Kuchuk

Fernando M de Oliveira

Danylo Babich

...

2023/7/14

Epitaxial growth of Ge1-xSnx on c–Plane sapphire substrate by molecular beam epitaxy

Journal of Crystal Growth

Dhammapriy Gayakwad

Dushyant Singh

Rahul Kumar

Yuriy I Mazur

Shui-Qing Yu

...

2023/9/15

Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy

Crystals

Emmanuel Wangila

Peter Lytvyn

Hryhorii Stanchu

Calbi Gunder

Fernando Maia de Oliveira

...

2023/10/31

Strain-driven anomalous elastic properties of GeSn thin films

Applied Physics Letters

Petro Lytvyn

Andrian Kuchuk

Serhiy Kondratenko

Hryhorii Stanchu

Sergii V Malyuta

...

2023/7/10

Algorithm based high composition-controlled growths of GeSn on GaAs (001) via molecular beam epitaxy

arXiv preprint arXiv:2309.06695

Calbi Gunder

Mohammad Zamani Alavijeh

Emmanuel Wangila

Fernando Maia de Oliveira

Aida Sheibani

...

2023/9/13

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures

Crystal Growth & Design

Nirosh M. Eldose

Hryhorii Stanchu

Subhashis Das

Ilias Bikmukhametov

Chen Li

...

2023/10/16

Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN (001) for Narrow-Bandgap Optoelectronics

ACS Applied Nano Materials

Fernando M de Oliveira

Andrian V Kuchuk

Petro M Lytvyn

Cosmin Romanitan

Hryhorii V Stanchu

...

2023/4/26

See List of Professors in Yuriy I. Mazur University(University of Arkansas)

Co-Authors

H-index: 64
Gregory Salamo

Gregory Salamo

University of Arkansas

H-index: 57
Huiyun Liu

Huiyun Liu

University College London

H-index: 55
Christoph Lienau

Christoph Lienau

Carl von Ossietzky Universität Oldenburg

H-index: 49
W. Ted Masselink

W. Ted Masselink

Humboldt-Universität zu Berlin

H-index: 39
Shui-Qing (Fisher) Yu

Shui-Qing (Fisher) Yu

University of Arkansas

H-index: 36
Mourad Benamara

Mourad Benamara

University of Arkansas

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