Gregory Salamo

Gregory Salamo

University of Arkansas

H-index: 64

North America-United States

About Gregory Salamo

Gregory Salamo, With an exceptional h-index of 64 and a recent h-index of 26 (since 2020), a distinguished researcher at University of Arkansas, specializes in the field of optics, nanoscience, material science.

His recent articles reflect a diverse array of research interests and contributions to the field:

A DC to 25 MHz Current Sensing Interface for Hall-effect Sensor

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy

Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors

Gregory Salamo Information

University

Position

Professor of Physics

Citations(all)

21785

Citations(since 2020)

5201

Cited By

19080

hIndex(all)

64

hIndex(since 2020)

26

i10Index(all)

369

i10Index(since 2020)

103

Email

University Profile Page

University of Arkansas

Google Scholar

View Google Scholar Profile

Gregory Salamo Skills & Research Interests

optics

nanoscience

material science

Top articles of Gregory Salamo

Title

Journal

Author(s)

Publication Date

A DC to 25 MHz Current Sensing Interface for Hall-effect Sensor

IEEE Sensors Journal

Ayesha Hassan

Asma Mahar

Satish Shetty

Anand Vikas Lalwani

K Asif Faruque

...

2024/2/6

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Crystals

Emmanuel Wangila

Calbi Gunder

Petro M Lytvyn

Mohammad Zamani-Alavijeh

Fernando Maia de Oliveira

...

2024/4/28

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

IEEE Sensors Journal

Satish Shetty

Fernando Maia De Oliveira

Yuriy I Mazur

H Alan Mantooth

Gregory J Salamo

2024/1/3

Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells

Surfaces and Interfaces

Fernando M de Oliveira

Andrian V Kuchuk

Pijush K Ghosh

Morgan E Ware

Yuriy I Mazur

...

2024/4/14

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

IEEE Transactions on Electron Devices

Satish Shetty

Savannah R Eisner

Ayesha Hassan

Anand Lalwani

Dinesh Baral

...

2024/4/8

The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy

RSC advances

Calbi Gunder

Fernando Maia de Oliveira

Emmanuel Wangila

Hryhorii Stanchu

Mohammad Zamani-Alavijeh

...

2024

Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Journal of Physics D: Applied Physics

Hryhorii Stanchu

Serhii Kryvyi

Stephen Margiotta

Matthew Cook

Joshua Grant

...

2024/3/28

Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors

arXiv preprint arXiv:2402.11393

Anand V Lalwani

Abel John

Satish Shetty

Miriam Giparakis

Kanika Arora

...

2024/2/17

Effects of ion implantation with arsenic and boron in germanium-tin layers

Journal of Vacuum Science & Technology B

Sylvester Amoah

Hryhorii Stanchu

Grey Abernathy

Serhii Kryvyi

Fernando M De Oliveira

...

2024/5/1

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Applied Physics Letters

Hang Li

Ying Wang

Yingnan Guo

Shufang Wang

Guangsheng Fu

...

2023/4/24

Temperature dependent behavior of sub-monolayer quantum dot based solar cell

Sol. Energy Mater. Sol. Cells.

N. Alnami

R. Kumar

S. K. Saha

A. Alnami

M. E. Ware

...

2023/8/15

Epitaxial growth of Ge1-xSnx on c–Plane sapphire substrate by molecular beam epitaxy

Journal of Crystal Growth

Dhammapriy Gayakwad

Dushyant Singh

Rahul Kumar

Yuriy I Mazur

Shui-Qing Yu

...

2023/9/15

Dual mode technique based on Hall effect and induction for magnetic field sensors

2023/10/26

Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells

Journal of Crystal Growth

Solomon Ojo

Hryhorii Stanchu

Sudip Acharya

Abdulla Said

Sylvester Amoah

...

2023/3/1

Photoconductivity of GeSn thin films with up to 15% Sn content

Physical Review Materials

Serhiy Kondratenko

Oleksandr Datsenko

Andrian V Kuchuk

Fernando M de Oliveira

Danylo Babich

...

2023/7/14

Apparatus And Method To Reduce The Thermal Resistance Of Semiconductor Substrates

2023/9/14

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures

Crystal Growth & Design

Nirosh M. Eldose

Hryhorii Stanchu

Subhashis Das

Ilias Bikmukhametov

Chen Li

...

2023/10/16

High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon

IEEE Journal of Quantum Electronics

Daqian Guo

Jian Huang

Mourad Benamara

Yuriy I Mazur

Zhuo Deng

...

2023/1/23

Strain-driven anomalous elastic properties of GeSn thin films

Applied Physics Letters

Petro Lytvyn

Andrian Kuchuk

Serhiy Kondratenko

Hryhorii Stanchu

Sergii V Malyuta

...

2023/7/10

Algorithm based high composition-controlled growths of GeSn on GaAs (001) via molecular beam epitaxy

arXiv preprint arXiv:2309.06695

Calbi Gunder

Mohammad Zamani Alavijeh

Emmanuel Wangila

Fernando Maia de Oliveira

Aida Sheibani

...

2023/9/13

See List of Professors in Gregory Salamo University(University of Arkansas)