Weisheng Zhao

About Weisheng Zhao

Weisheng Zhao, With an exceptional h-index of 76 and a recent h-index of 57 (since 2020), a distinguished researcher at Beihang University, specializes in the field of Spintronics Devices and Integrated Circuits.

His recent articles reflect a diverse array of research interests and contributions to the field:

NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications

Discovery of a hybrid topological quantum state in an elemental solid

Graph Neural Networks Automated Design and Deployment on Device-Edge Co-Inference Systems

Implementing Versatile Programmable Logic Functions Using Two Magnetization Switching Types in a Single Device (Adv. Funct. Mater. 3/2024)

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Linearization of the tunneling magnetoresistance sensors through a three-step annealing process

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024)

Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO

Weisheng Zhao Information

University

Position

Fert Beijing Institute

Citations(all)

21563

Citations(since 2020)

15191

Cited By

11468

hIndex(all)

76

hIndex(since 2020)

57

i10Index(all)

354

i10Index(since 2020)

314

Email

University Profile Page

Google Scholar

Weisheng Zhao Skills & Research Interests

Spintronics Devices and Integrated Circuits

Top articles of Weisheng Zhao

NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications

arXiv preprint arXiv:2404.05528

2024/4/8

Graph Neural Networks Automated Design and Deployment on Device-Edge Co-Inference Systems

arXiv preprint arXiv:2404.05605

2024/4/8

Implementing Versatile Programmable Logic Functions Using Two Magnetization Switching Types in a Single Device (Adv. Funct. Mater. 3/2024)

Advanced Functional Materials

2024/1

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Science Advances

2024/4/5

Linearization of the tunneling magnetoresistance sensors through a three-step annealing process

AIP Advances

2024/1/1

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024)

Advanced Electronic Materials

2023

Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO

Science China Information Sciences

2024/1

Focused THz wave from a spintronic terahertz Fresnel Zone Plate emitter

Optics & Laser Technology

2024/4/1

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi 2 P 4

Journal of Materials Chemistry C

2024

Compact leak-integrate-fire neuron with auto-reset functionality based on a single spin–orbit torque magnetic tunnel junction device

Applied Physics Letters

2024/3/25

Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching

Advanced Functional Materials

2024/1

Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets

arXiv preprint arXiv:2403.12642

2024/3/19

Criteria to observe single-shot all-optical switching in Gd-based ferrimagnetic alloys

Physical Review B

2024/3/11

Orbital Rashba effects and light-induced Orbital Current in Teraherz Emission Experiments.

Bulletin of the American Physical Society

2024/3/8

Yong Xu
Yong Xu

H-Index: 18

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Orbitronics: light-induced orbital currents in Ni studied by terahertz emission experiments

Nature Communications

2024/3/6

APIM: An Antiferromagnetic MRAM-Based Processing-In-Memory System for Efficient Bit-level Operations of Quantized Convolutional Neural Networks

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

2024/3/1

Air stability and composition evolution in van der Waals Fe3GeTe2

APL Materials

2024/3/1

Pressure-induced optical anisotropy of HfS

arXiv preprint arXiv:2402.19040

2024/2/29

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

IEEE Electron Device Letters

2024/2/26

See List of Professors in Weisheng Zhao University(Beihang University)

Co-Authors

academic-engine