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Xiaoyang Lin

About Xiaoyang Lin

Xiaoyang Lin, With an exceptional h-index of 24 and a recent h-index of 21 (since 2020), a distinguished researcher at Beihang University, specializes in the field of Nanotechnology, Spintronics.

His recent articles reflect a diverse array of research interests and contributions to the field:

A High Throughput In-MRAM-Computing Scheme Using Hybrid p-SOT-MTJ/GAA-CNTFET

Neuromorphic terahertz imaging based on carbon nanotube circuits

In-Memory Transposable Multibit Multiplication Based on Diagonal Symmetry Weight Block

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

2D material property characterizations by machine-learning-assisted microscopies

Device for imaging 1-D nanomaterials

Resonant Tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin gapless semiconductor VSi2P4

Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl2 films with interlayer antiferromagnetic couplings

Xiaoyang Lin Information

University

Position

___

Citations(all)

2485

Citations(since 2020)

1742

Cited By

1312

hIndex(all)

24

hIndex(since 2020)

21

i10Index(all)

47

i10Index(since 2020)

36

Email

University Profile Page

Google Scholar

Xiaoyang Lin Skills & Research Interests

Nanotechnology

Spintronics

Top articles of Xiaoyang Lin

A High Throughput In-MRAM-Computing Scheme Using Hybrid p-SOT-MTJ/GAA-CNTFET

IEEE Transactions on Circuits and Systems I: Regular Papers

2023/12/20

Yunlong Liu
Yunlong Liu

H-Index: 8

Hao Tang
Hao Tang

H-Index: 6

Zhaohao Wang
Zhaohao Wang

H-Index: 18

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Neuromorphic terahertz imaging based on carbon nanotube circuits

Science China Information Sciences

2023/6

Nan Yang
Nan Yang

H-Index: 11

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Weisheng Zhao
Weisheng Zhao

H-Index: 51

In-Memory Transposable Multibit Multiplication Based on Diagonal Symmetry Weight Block

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

2023/5/10

Yue Zhao
Yue Zhao

H-Index: 3

Jin Zhang
Jin Zhang

H-Index: 6

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

ACS Applied Materials & Interfaces

2023/8/15

Shen Li
Shen Li

H-Index: 6

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Reinoud Lavrijsen
Reinoud Lavrijsen

H-Index: 18

Weisheng Zhao
Weisheng Zhao

H-Index: 51

2D material property characterizations by machine-learning-assisted microscopies

2023/4

Daming Zhou
Daming Zhou

H-Index: 16

Jianlei Yang
Jianlei Yang

H-Index: 13

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Device for imaging 1-D nanomaterials

2023/1/10

Resonant Tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin gapless semiconductor VSi2P4

Journal of Materials Chemistry C

2024

Daming Zhou
Daming Zhou

H-Index: 16

Wei Yang
Wei Yang

H-Index: 22

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl2 films with interlayer antiferromagnetic couplings

Nanoscale

2023

Wei Yang
Wei Yang

H-Index: 22

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

On/Off Ultra‐Short Spin Current for Single Pulse Magnetization Reversal in a Magnetic Memory Using VO2 Phase Transition

Advanced Electronic Materials

2022/10

Michel Hehn
Michel Hehn

H-Index: 33

Gregory Malinowski
Gregory Malinowski

H-Index: 24

Yong Xu
Yong Xu

H-Index: 18

Boyu Zhang
Boyu Zhang

H-Index: 5

Wei Zhang
Wei Zhang

H-Index: 23

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2

Applied Physics Reviews

2022/9/1

Wei Yang
Wei Yang

H-Index: 22

Wang Yang
Wang Yang

H-Index: 2

Yuan Cao
Yuan Cao

H-Index: 3

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Haichang Lu
Haichang Lu

H-Index: 6

Peizhe Tang
Peizhe Tang

H-Index: 21

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Picosecond optospintronic tunnel junctions

Proceedings of the National Academy of Sciences

2022/6/14

Luding Wang
Luding Wang

H-Index: 1

Houyi Cheng
Houyi Cheng

H-Index: 1

Yang Liu
Yang Liu

H-Index: 18

Reinoud Lavrijsen
Reinoud Lavrijsen

H-Index: 18

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Weisheng Zhao
Weisheng Zhao

H-Index: 51

An All-Electric Neural Device and Network Based on Laterally Coupled Nanomagnets for Binary Image Recognitions

IEEE Transactions on Electron Devices

2022/4/27

Shen Li
Shen Li

H-Index: 6

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection

Applied Physics Express

2022/4/1

Shen Li
Shen Li

H-Index: 6

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

An Automatic Magnetic Domain Characterization Method by Intelligent Algorithms assisted Kerr microscopy

Journal of Physics: Conference Series

2022/3/1

Tianhao Zhang
Tianhao Zhang

H-Index: 2

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Thermal impact on ultrafast helicity independent all-optical switching of GdxCo100-x

Journal of Physics: Conference Series

2022/3/1

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Phase-Change Controlled Magnetic Tunnel Junction for Multifunctional In-Sensor Computing

IEEE Electron Device Letters

2022/2/2

Shen Li
Shen Li

H-Index: 6

Wei Yang
Wei Yang

H-Index: 22

Zhi Li
Zhi Li

H-Index: 2

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Promising spin caloritronics and spin diode effects based on 1T-FeCl 2 nanotube devices

Journal of Materials Chemistry C

2022

Xuefeng Chen
Xuefeng Chen

H-Index: 3

Wei Yang
Wei Yang

H-Index: 22

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Applied Physics Letters

2021/9/20

Shen Li
Shen Li

H-Index: 6

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Wei Yang
Wei Yang

H-Index: 22

Zhaohao Wang
Zhaohao Wang

H-Index: 18

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Light-induced radially polarized magnetic fields

Optics Communications

2021/7/15

Xiaoqiang Zhang
Xiaoqiang Zhang

H-Index: 8

Yong Xu
Yong Xu

H-Index: 18

Xiaoyang Lin
Xiaoyang Lin

H-Index: 16

Anting Wang
Anting Wang

H-Index: 17

Weisheng Zhao
Weisheng Zhao

H-Index: 51

Dapeng Zhu
Dapeng Zhu

H-Index: 9

Efficient spin injection in Fe3GeTe2/h-BN/graphene heterostructure

ACTA PHYSICA SINICA

2021/6/20

Yang Wei
Yang Wei

H-Index: 17

See List of Professors in Xiaoyang Lin University(Beihang University)

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