Toru Akiyama
Mie University
H-index: 28
Asia-Japan
Top articles of Toru Akiyama
Title | Journal | Author(s) | Publication Date |
---|---|---|---|
First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation | Japanese Journal of Applied Physics | Hiroyuki KAGESHIMA Toru Akiyama Kenji Shiraishi | 2024/2/21 |
Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study | Japanese Journal of Applied Physics | Toru Akiyama Hiroyuki KAGESHIMA Kenji Shiraishi | 2024/2/15 |
Ab initio study for adsorption behavior on AlN (0001) surface with steps and kinks during metal-organic vapor-phase epitaxy | Japanese Journal of Applied Physics | Toru Akiyama Takahiro Kawamura | 2024/1/29 |
First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures | Journal of Crystal Growth | Takahiro Kawamura Toru Akiyama Yoshihiro Kangawa | 2024/1/15 |
Controversies in orthopaedic oncology | Lee M Jeys Joachim Thorkildsen Vineet Kurisunkal Ajay Puri Pietro Ruggieri | 2024/5/1 | |
An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces | physica status solidi (b) | Toru Akiyama Takahiro Kawamura | 2024/4/7 |
Ⅲ 族窒化物エピタキシャル成長における成長様式の理論解析 | 日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth | 秋山亨, 伊藤智徳 | 2023 |
First-principles study on silicon emission from interface into oxide during silicon thermal oxidation | Materials Science in Semiconductor Processing | Hiroyuki Kageshima Toru Akiyama Kenji Shiraishi | 2023/8/1 |
エピタキシャル成長の量子論における新展開: シミュレーションからデジタルツインへ | 日本結晶成長学会誌 | 秋山亨, 荒木努, 富永依里子 | 2023 |
First-principles study for self-limiting growth of GaN layers on AlN (0001) surface | Japanese Journal of Applied Physics | Haruka Sokudo Toru Akiyama Tomonori Ito | 2023/4 |
III 族窒化物エピタキシャル成長における成長様式の理論解析 | 日本結晶成長学会誌 | 秋山亨, 伊藤智徳 | 2023 |
Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain | physica status solidi (b) | Takahiro Kawamura Kouhei Basaki Akito Korei Toru Akiyama Yoshihiro Kangawa | 2023/8 |
OVPE 成長条件下における GaN 表面構造と点欠陥が GaN の光学特性へ与える影響 | 日本結晶成長学会誌 | 河村貴宏, 秋山亨, 宇佐美茂佳, 今西正幸, 吉村政志, 森勇介, 森川良忠, 寒川義裕 | 2023 |
Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN | ACS Applied Electronic Materials | Atsushi Kobayashi Shunya Kihira Toru Akiyama Takahiro Kawamura Takuya Maeda | 2023/1/9 |
Role of charged oxygen vacancies and substrate lattice constraint on structural stability of Ga2O3 polymorphs | Applied Physics Express | Toru Akiyama Takahiro Kawamura Tomonori Ito | 2023/1/19 |
First-principles study for orientation dependence of band alignments at 4H-SiC/SiO2 interface | Japanese Journal of Applied Physics | Shun Matsuda Toru Akiyama Tetsuo HATAKEYAMA Kenji Shiraishi Takashi NAKAYAMA | 2023/12/25 |
To where do silicon atoms go? Still mysterious thermal oxidation | Oyo Buturi (Online) | Hiroyuki Kageshima Toru Akiyama Kenji Shiraishi Masashi Uematsu | 2022 |
Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study | Surface Science | Toru Akiyama Tsunashi Shimizu Tomonori Ito Hiroyuki Kageshima Kenji Shiraishi | 2022/9/1 |
Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces | Japanese Journal of Applied Physics | Toru Akiyama Tsunashi Shimizu Tomonori Ito Hiroyuki Kageshima Kenta Chokawa | 2022/3/25 |
Influence of oxygen-related defects on the electronic structure of GaN | Japanese Journal of Applied Physics | Satoshi Ohata Takahiro Kawamura Toru Akiyama Shigeyoshi Usami Masayuki Imanishi | 2022/5/24 |