Toru Akiyama

Toru Akiyama

Mie University

H-index: 28

Asia-Japan

About Toru Akiyama

Toru Akiyama, With an exceptional h-index of 28 and a recent h-index of 16 (since 2020), a distinguished researcher at Mie University, specializes in the field of material science.

His recent articles reflect a diverse array of research interests and contributions to the field:

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Ab initio study for adsorption behavior on AlN (0001) surface with steps and kinks during metal-organic vapor-phase epitaxy

First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures

Controversies in orthopaedic oncology

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces

Ⅲ 族窒化物エピタキシャル成長における成長様式の理論解析

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

Toru Akiyama Information

University

Mie University

Position

___

Citations(all)

3972

Citations(since 2020)

1357

Cited By

3177

hIndex(all)

28

hIndex(since 2020)

16

i10Index(all)

107

i10Index(since 2020)

34

Email

University Profile Page

Mie University

Toru Akiyama Skills & Research Interests

material science

Top articles of Toru Akiyama

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

Authors

Hiroyuki KAGESHIMA,Toru Akiyama,Kenji Shiraishi

Journal

Japanese Journal of Applied Physics

Published Date

2024/2/21

Employing the first-principles calculation, the detailed energy landscape of the path for the Si emission from the interface into the oxide is studied. It is found that the barrier height almost reproduces the experimental values, which indicates that the Si emission surely corresponds to the diffusion of SiO interstitial. It is also found that the barrier height is microscopically rate-limited by the oxygen-vacancy transfer process, which temporarily and inevitably proceeds under a large local tensile strain induced by the diffusion of SiO interstitial.

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Authors

Toru Akiyama,Hiroyuki KAGESHIMA,Kenji Shiraishi

Journal

Japanese Journal of Applied Physics

Published Date

2024/2/15

The reactions of NO molecule at 4H-SiC/SiO2 interface on various plane orientations are theoretically investigated using density functional calculations to clarify microscopic mechanisms of NO post oxidation annealing (POA) process. We find that the energy barriers for nitrogen incorporation reaction are smaller than those for nitrogen desorption irrespective of the plane orientation, indicating that N atoms are preferentially incorporated. However, on the Si-face we find a possible NO reaction process without CO molecule formation as well as the reaction with NCO molecule formation when the interface includes pre-incorporated N atoms. Owing to the reaction resulting in the formation of NCO molecule, the incorporation of N atoms can be suppressed, which could be one of possible origins for the N density saturation in the NO-POA. The calculated results suggest that not only structural stability of the interface but …

Ab initio study for adsorption behavior on AlN (0001) surface with steps and kinks during metal-organic vapor-phase epitaxy

Authors

Toru Akiyama,Takahiro Kawamura

Journal

Japanese Journal of Applied Physics

Published Date

2024/1/29

We present our systematic theoretical study by performing ab initio calculations to clarify the behavior of adsorption for constituent atoms such as Al and N on a vicinal AlN (0001) surface with step edges and kinks during metal-organic vapor-phase epitaxy (MOVPE). The calculations reveal that the surface reconstruction affects the adsorption of Al and N adatoms near the kinks and step edges. Furthermore, we find the incorporation of an Al adatom at the kink and that of N adatoms not only at the kink but also in the terrace regions. The calculated results give some insights for an atomic-scale understanding of the step-flow growth during the MOVPE growth of AlN.

First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures

Authors

Takahiro Kawamura,Toru Akiyama,Yoshihiro Kangawa

Journal

Journal of Crystal Growth

Published Date

2024/1/15

Ga 2 O 3 devices are expected to be used for high-power applications such as power converters and high electron mobility transistors. To improve the device performance, band-engineering of superlattice structures consisting of Ga 2 O 3 and Al 2 O 3 has been of interest. Here, the bandgap dependencies of α-Ga 2 O 3/Al 2 O 3 superlattices on the superlattice period thickness and the lattice strain were investigated using first-principles calculations. The conduction and valence band offsets at the Ga 2 O 3/Al 2 O 3 interface were also examined. The bandgaps decreased with increasing superlattice period thickness, increased under compressive strain along the a-and b-axes, and decreased under tensile strain.

Controversies in orthopaedic oncology

Authors

Lee M Jeys,Joachim Thorkildsen,Vineet Kurisunkal,Ajay Puri,Pietro Ruggieri,Matthew T Houdek,Richard A Boyle,Walid Ebeid,Eduardo Botello,Guy V Morris,Minna K Laitinen,Adesegun Abudu,Keisuke Ae,Manish Agarwal,Vivek Ajit Singh,Toru Akiyama,Jose I Albergo,John Alexander,Bugra Alpan,Ahmed Aoude,Apichat Asavamongkolkul,William Aston,Thomas Baad-Hansen,Tessa Balach,Joseph Benevenia,Peter Bergh,Nicholas Bernthal,Odion Binitie,Michele Boffano,Jos Bramer,Harriet Branford White,Bernadette Brennan,Jorge Cabrolier,Jose A Calvo Haro,Domenico A Campanacci,Rodrigo Cardoso,Richard Carey Smith,Nicolas Casales Fresnga,Jose M Casanova,Oscar Ceballos,Chung M Chan,Yang-Guk Chung,Miguel A Clara-Altamirano,Gillian Cribb,Solomon Dadia,Dietmar Dammerer,Marieke de Vaal,Javier Delgado Obando,Shaneel Deo,Claudia Di Bella,Davide M Donati,Makoto Endo,Levent Eralp,Bulent Erol,Scott Evans,Will Eward,Fabrice Fiorenza,Joao Freitas,Philipp T Funovics,Marcos Galli Serra,Michelle Ghert,Kanishka Ghosh,Luis C Gomez Mier,Jesus Gomez Vallejo,Anthony Griffin,Ashish Gulia,Maurice Guzman,Jendrik Hardes,John Healey,Adriana Hernandez,Asle Hesla,Chindanai Hongsaprabhas,Francis Hornicek,Keith Hosking,Shintaro Iwata,Jake Jagiello,Luke Johnson,Andy Johnston,Min Joo,Paul Jutte,Bilal Kapanci,Zeeshan Khan,Hiroshi Kobayashi,Yehuda Kollender,Sebastian Koob,Daniel Kotrych,Louis-Romee Le Nail,Pawel Legosz,Burkhard Lehner,Andreas Leithner,Valerae Lewis,Peng Lin,Francisco Linares,Santiago Lozano Calderon,Ashish Mahendra,Ferdiansyah Mahyudin,Eric Mascard,Jean-Camille Mattei,Louise McCullough,Manuel R Medellin Rincon,Rhidian Morgan-Jones,Diego J Moriel Garcesco,Sophie Mottard,Robert Nakayama,Prashant Narhari,Gary O'Toole,Oliveira Vania,André Olivier,Mohamed Omar,Eduardo Ortiz-Cruz,Harzem Ozger,Korhan Ozkan,Emanuela Palmerini,Panayiotis Papagelopoulos,Michael Parry,Sam Patton,Michael M Petersen,Gerard Powell,Mark Puhaindran,Anand Raja,Raja B Rajasekaran,Lauris Repsa,Mickael Ropars,Andrea Sambri,Thomas Schubert,Ahmad Shehadeh,Geoffrey Siegel,Scott Sommerville,Andre Spiguel,Jonathan Stevenson,Gwen Sys,Thomas Temple,Frank Traub,Hiroyuki Tsuchiya,Juan Valencia,Michel Van de Sande,Gualter Vaz,Roberto Velez Villa,Oleg Vyrva,Hazem Wafa,Wan I Wan Faisham Numan,Edward Wang,David Warnock,Joel Werier,Kwok-Chuen Wong,Yamamoto Norio,Ye Zhaoming,Suraya Zainul Abidin,Tomas Zamora,Juan P Zumarraga

Published Date

2024/5/1

Chondrosarcoma is the second most common surgically treated primary bone sarcoma. Despite a large number of scientific papers in the literature, there is still significant controversy about diagnostics, treatment of the primary tumour, subtypes, and complications. Therefore, consensus on its day-to-day treatment decisions is needed. In January 2024, the Birmingham Orthopaedic Oncology Meeting (BOOM) attempted to gain global consensus from 300 delegates from over 50 countries. The meeting focused on these critical areas and aimed to generate consensus statements based on evidence amalgamation and expert opinion from diverse geographical regions. In parallel, periprosthetic joint infection (PJI) in oncological reconstructions poses unique challenges due to factors such as adjuvant treatments, large exposures, and the complexity of surgery. The meeting debated two-stage revisions, antibiotic …

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces

Authors

Toru Akiyama,Takahiro Kawamura

Journal

physica status solidi (b)

Published Date

2024/4/7

Theoretical investigations for the adsorption behavior of O atoms on both Ga‐polar (+c) surface and N‐polar (−$-$c) GaN surfaces using ab initio calculations to clarify the influence of adsorption behavior on oxygen incorporation are presented. The calculations demonstrate that the O atom is stabilized by forming Ga−$-$OH bond on the flat +c plane GaN(0001) surface, while the topmost N atom is replaced by the O atom on the flat −$-$c plane GaN(0001¯$\bar{1}$) surface. The calculations using the nudged elastic band method also reveal that the energy barriers for oxygen incorporation on the flat −$-$c plane surface are comparable to that on the flat +c plane surface. Furthermore, the adsorption energy on the −$-$c plane surface drastically increases on the vicinal surface with step edges and kinks, indicating that step edges and kinks enhance the incorporation of O atoms on the −$-$c plane surfaces. The …

Ⅲ 族窒化物エピタキシャル成長における成長様式の理論解析

Authors

秋山亨, 伊藤智徳

Journal

日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth

Published Date

2023

トクシュウ エピタキシャル セイチョウ ノ リョウシロン ニ オケル シン テンカイ: シミュレーション カラ デジタルツイン エ

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

Authors

Hiroyuki Kageshima,Toru Akiyama,Kenji Shiraishi

Journal

Materials Science in Semiconductor Processing

Published Date

2023/8/1

Using the first-principles calculation, the diffusion path is explored in the Si emission from the interface into the Si oxide surface during the Si oxidation process, by assuming that the Si emission dominantly consists of a SiO interstitial diffusion. Searching for the diffusion path was succeeded and the energy profile of diffusion path can be evaluated. At this time, only three elementary processes, such as O vacancy transfer, coordination number conversion of Si, and ACBD bond order conversion, were just considered. It has been confirmed that the SiO interstitial moves in the oxide with sequentially kicking the neighboring Si and O like a billiards, and that the kicked-out Si and O become a new SiO interstitial, while Si and O belonging to the old SiO interstitial are absorbed as a part of the oxide. Furthermore, the energy profile of similar diffusion path in bulk SiO2 crystal is also compared. It is revealed that the Si oxide …

エピタキシャル成長の量子論における新展開: シミュレーションからデジタルツインへ

Authors

秋山亨, 荒木努, 富永依里子

Journal

日本結晶成長学会誌

Published Date

2023

エピタキシャル成長の量子論における新展開:シミュレーションからデジタルツインへ メンテナンスのため 、4/29(土)9:00~19:00の間、一部機能が制限されます。記事の検索・閲覧は可能です。 メンテナンス 情報の詳細はこちら Toggle navigation メンテナンスモード J-STAGE home 資料・記事を探す 資料 を探す:資料タイトルから 資料を探す:分野から 資料を探す:発行機関から 記事を探す データを探す (J-STAGE Data) J-STAGEについて J-STAGEの概要 各種サービス・機能 公開データ 利用規約 ・ポリシー 新規登載の申し込み ニュース&PR お知らせ一覧 リリースノート メンテナンス情報 イベント 情報 J-STAGEニュース 特集コンテンツ 各種広報媒体 サポート J-STAGE登載機関用コンテンツ 登載 ガイドライン・マニュアル 閲覧者向けヘルプ 動作確認済みブラウザ FAQ お問い合わせ サイトマップ サインイン カート JA English 日本語 資料・記事を探す 資料を探す:資料タイトルから 資料を探す :分野から 資料を探す:発行機関から 記事を探す データを探す(J-STAGE Data) J-STAGEについて J-…

First-principles study for self-limiting growth of GaN layers on AlN (0001) surface

Authors

Haruka Sokudo,Toru Akiyama,Tomonori Ito

Journal

Japanese Journal of Applied Physics

Published Date

2023/4

The GaN thickness dependence of surface structural stability and adsorption behavior of Ga adatom in GaN layers on a AlN (0001) surface are investigated on the basis of first-principles calculations to clarify the self-limiting growth on AlN (0001) surface during metal-organic vapor phase epitaxy. The calculations demonstrate that the stability of reconstructed GaN layers on a AlN (0001) surface is similar to that of a GaN (0001) surface irrespective of the GaN film thickness. Furthermore, we find that the adsorption of a Ga adatom on the AlN (0001) surface easily occurs compared with that on AlN (0001) surface with GaN layers. The difference in the adsorption behavior implies that the growth of GaN layers on a AlN (0001) surface is suppressed. The calculated results provide theoretical guidance for understanding the self-limiting growth of GaN layers, resulting in the formation mechanism of GaN quantum wells.

III 族窒化物エピタキシャル成長における成長様式の理論解析

Authors

秋山亨, 伊藤智徳

Journal

日本結晶成長学会誌

Published Date

2023

The growth mode of group-III nitride thin films during epitaxial growth are systematically investigated using the macroscopic theory with the aid of empirical interatomic potential calculations and ab initio calculations. The analysis of free energies demonstrates that two-dimensional growth with misfit dislocations (2D-MD) is favorable for GaN (InN) thin films on c-plane AlN (GaN) surface under Ga-rich (In-rich) condition while three-dimensional growth with truncated hexagonal pyramid islands is favorable under N-rich condition. Furthermore, we reveal that the area of 2D-MD in the growth mode phase diagram as functions of surface energy anisotropy and surface energy on (0001) plane expands with decreasing Al (In) composition for AlGaN (InGaN) thin films. The difference in growth mode is caused by the surface energy anisotropy, which strongly depends on the growth condition. The results suggest the surface energy anisotropy forming is a crucial factor for determining the growth modes of group-III nitrides. Several issues to construct “digital twin” for epitaxial growth on the basis of conventional calculation schemes are also discussed.

Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain

Authors

Takahiro Kawamura,Kouhei Basaki,Akito Korei,Toru Akiyama,Yoshihiro Kangawa

Journal

physica status solidi (b)

Published Date

2023/8

III–V GaN‐based nitride semiconductors have attracted interest because their bandgaps can be tuned by constructing alloys and superlattices, and by applying lattice strain. Herein, the influence of uniaxial and equibiaxial strains on the bandgaps of short‐period InN/AlN superlattices is examined using first‐principles calculations. For the uniaxial strain, the bandgaps change in the same manner when the superlattices are strained in the a‐ and m‐axis directions; however, the bandgaps change in a different manner when the superlattices are strained in the c‐axis direction. Even when equibiaxial strain is applied, the change in bandgap depends on the direction in which the strain is applied.

OVPE 成長条件下における GaN 表面構造と点欠陥が GaN の光学特性へ与える影響

Authors

河村貴宏, 秋山亨, 宇佐美茂佳, 今西正幸, 吉村政志, 森勇介, 森川良忠, 寒川義裕

Journal

日本結晶成長学会誌

Published Date

2023

Oxide vapor phase epitaxy (OVPE) method is an attractive bulk GaN growth method because solid by-products that disturb continuous crystal growth do not form. However, because Ga 2 O is used as Ga source in the OVPE method, a high O impurity concentration is a major problem. To understand how to incorporate O impurities and its influence on the optical properties of GaN, we examined surface structures of GaN under OVPE growth conditions and electronic structures of GaN including O-related point and complex defects using first-principles calculations. Difference in O adsorption depending on surface orientation and an influence of the O-related defects on the electronic structure of GaN were discussed.

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

Authors

Atsushi Kobayashi,Shunya Kihira,Toru Akiyama,Takahiro Kawamura,Takuya Maeda,Kohei Ueno,Hiroshi Fujioka

Journal

ACS Applied Electronic Materials

Published Date

2023/1/9

The polarity control of AlN by epitaxial growth can enable the fabrication of wavelength conversion devices and innovative electronic devices based on nitride semiconductors. Conventional techniques for controlling the AlN polarity are based on oxygen-mediated growth mechanisms. In contrast, this study reports a technique to invert the polarity of wurtzite-type AlN using lattice-matched centrosymmetric NbN. The surface of AlN grown by sputtering on NbN/Al-polar AlN was atomically flat and highly crystalline. Structural analysis with scanning transmission electron microscopy revealed that the AlN grown on NbN/Al-polar AlN was N-polar. The proposed all-nitride epitaxial N-polar AlN/NbN/Al-polar AlN heterostructure did not contain oxide materials, which typically degrade the optical and electrical properties of AlN. Furthermore, the stability of the N-polar AlN/NbN interface was clarified by density functional theory …

Role of charged oxygen vacancies and substrate lattice constraint on structural stability of Ga2O3 polymorphs

Authors

Toru Akiyama,Takahiro Kawamura,Tomonori Ito

Journal

Applied Physics Express

Published Date

2023/1/19

The effects of charged oxygen vacancies and substrate lattice constraints on the structural stability of Ga 2 O 3 polymorphs are investigated by means of density functional calculations. We find that regardless of crystal phase doubly positively charge sate (V

First-principles study for orientation dependence of band alignments at 4H-SiC/SiO2 interface

Authors

Shun Matsuda,Toru Akiyama,Tetsuo HATAKEYAMA,Kenji Shiraishi,Takashi NAKAYAMA

Journal

Japanese Journal of Applied Physics

Published Date

2023/12/25

The orientation dependence of band alignments and the formation of dipoles at the 4H-SiC/SiO 2 interface are theoretically investigated on the basis of first-principles calculations. The calculations demonstrate that the offsets of valence and conduction bands depend on the surface orientation and chemical bonds at the 4H-SiC/SiO 2 interface. When we exclude the interfaces with C–O bonds which result in CO desorption, the calculated conduction band offset (CBO) on the Si-face with Si-O bonds is larger than those on the C-face with C–Si bonds and m-face with both Si-O and C–Si bonds. Furthermore, it is found the atomic configurations at the 4H-SiC/SiO 2 interface result in the formation of dipoles, whose magnitude is large for Si–O and C–O bonds. The formation of large dipoles significantly changes the band structure of 4H-SiC, resulting in large conduction bands offset. Therefore, the formation of a Si-O bond …

To where do silicon atoms go? Still mysterious thermal oxidation

Authors

Hiroyuki Kageshima,Toru Akiyama,Kenji Shiraishi,Masashi Uematsu

Journal

Oyo Buturi (Online)

Published Date

2022

[en] The thermal oxidation process of Si consists of four processes:(1) diffusion of oxidizing molecules in the oxide film,(2) reaction of oxidizing molecules and Si at the interface,(3) generation and transport of interstitial Si atoms at the interface associated with the reaction, and (4) volume expansion, viscous flow and deformation of the oxidized region. Such complexity is not noticeable in the thermal oxidation of flat Si, and at first glance it seems that it can be easily understood only by (1) and (2). But in the thermal oxidation of Si three-dimensional nanostructures, the complexity is immediately revealed. We introduce the overall microscopic picture of thermal oxidation process mainly based on our research.(author)

Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

Authors

Toru Akiyama,Tsunashi Shimizu,Tomonori Ito,Hiroyuki Kageshima,Kenji Shiraishi

Journal

Surface Science

Published Date

2022/9/1

The reactions of N 2 O and NH 3 molecules at the interface between 4H-SiC and SiO 2 during post oxidation annealing (POA) are theoretically investigated using ab initio calculations. We find that the reactions of N 2 O molecule at (0001) and (0001¯) interfaces result in the desorption of carbon oxide molecules in addition to Si–N bond formation. For the reaction of NH 3 molecule, various atomic configurations are formed depending on the plane orientation. Furthermore, the energy barriers for the N 2 O and NH 3 reactions are found to be higher than that of the NO reaction owing to different atomic configurations at the transition state structure. The calculated results shed some insights for understanding POA process at 4H-SiC/SiO 2 interfaces.

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

Authors

Toru Akiyama,Tsunashi Shimizu,Tomonori Ito,Hiroyuki Kageshima,Kenta Chokawa,Kenji Shiraishi

Journal

Japanese Journal of Applied Physics

Published Date

2022/3/25

The incorporation behavior of N atoms at the 4H-SiC/SiO 2 interface is theoretically investigated on the basis of ab initio calculations. We find that the incorporation energy of N atoms at the Si-face interface is ranging from− 1.87 to− 1.12 eV, which is much higher than those at the C-face and m-face interfaces. Furthermore, the incorporation of O atoms of NO molecules at the Si-face interface leads to the desorption of N atoms as N 2 molecules when the areal density of N atoms is larger than 3× 10 14 cm− 2, while the incorporation of N atoms of NO molecules preferentially occurs on the C-face (m-face) interface until the areal density of N atoms is less than 2× 10 15 (1× 10 15) cm− 2. The calculated results suggest that the difference in the reaction energies depending on the plane orientation and the competition between N-incorporation and N 2 desorption are important for understandings of the atom-scale …

Influence of oxygen-related defects on the electronic structure of GaN

Authors

Satoshi Ohata,Takahiro Kawamura,Toru Akiyama,Shigeyoshi Usami,Masayuki Imanishi,Masashi Yoshimura,Yusuke Mori,Tomoaki Sumi,Junichi Takino

Journal

Japanese Journal of Applied Physics

Published Date

2022/5/24

Perfect GaN is a colorless, transparent crystal. However, because of intentional and unintentional impurities, GaN crystals have colors and lose some transparency. O impurities are generally considered to be the origin of the coloration. In this paper, electronic structures of GaN, which include O-related point and complex defects, were analyzed using first-principles calculations to investigate their influence on the optical properties of GaN. It is found that the defect levels due to native point defects of Ga and N vacancies were compensated by O and H impurities, as well as divalent (Mg and Zn) and tetravalent (Si, Ge, and Sn) metal impurities.

See List of Professors in Toru Akiyama University(Mie University)

Toru Akiyama FAQs

What is Toru Akiyama's h-index at Mie University?

The h-index of Toru Akiyama has been 16 since 2020 and 28 in total.

What are Toru Akiyama's top articles?

The articles with the titles of

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Ab initio study for adsorption behavior on AlN (0001) surface with steps and kinks during metal-organic vapor-phase epitaxy

First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures

Controversies in orthopaedic oncology

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces

Ⅲ 族窒化物エピタキシャル成長における成長様式の理論解析

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

...

are the top articles of Toru Akiyama at Mie University.

What are Toru Akiyama's research interests?

The research interests of Toru Akiyama are: material science

What is Toru Akiyama's total number of citations?

Toru Akiyama has 3,972 citations in total.

What are the co-authors of Toru Akiyama?

The co-authors of Toru Akiyama are Kazumasa Hiramatsu, Yoshitada Morikawa, Tamio Oguchi, Koichi Kakimoto, Hideto Miyake, Shiro Tsukamoto.

    Co-Authors

    H-index: 63
    Kazumasa Hiramatsu

    Kazumasa Hiramatsu

    Mie University

    H-index: 55
    Yoshitada Morikawa

    Yoshitada Morikawa

    Osaka University

    H-index: 53
    Tamio Oguchi

    Tamio Oguchi

    Osaka University

    H-index: 43
    Koichi Kakimoto

    Koichi Kakimoto

    Kyushu University

    H-index: 40
    Hideto Miyake

    Hideto Miyake

    Mie University

    H-index: 31
    Shiro Tsukamoto

    Shiro Tsukamoto

    Università degli Studi di Milano-Bicocca

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