Toru Akiyama

Toru Akiyama

Mie University

H-index: 28

Asia-Japan

About Toru Akiyama

Toru Akiyama, With an exceptional h-index of 28 and a recent h-index of 16 (since 2020), a distinguished researcher at Mie University, specializes in the field of material science.

His recent articles reflect a diverse array of research interests and contributions to the field:

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Ab initio study for adsorption behavior on AlN (0001) surface with steps and kinks during metal-organic vapor-phase epitaxy

First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures

Controversies in orthopaedic oncology

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces

Ⅲ 族窒化物エピタキシャル成長における成長様式の理論解析

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

Toru Akiyama Information

University

Position

___

Citations(all)

3972

Citations(since 2020)

1357

Cited By

3177

hIndex(all)

28

hIndex(since 2020)

16

i10Index(all)

107

i10Index(since 2020)

34

Email

University Profile Page

Mie University

Google Scholar

View Google Scholar Profile

Toru Akiyama Skills & Research Interests

material science

Top articles of Toru Akiyama

Title

Journal

Author(s)

Publication Date

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

Japanese Journal of Applied Physics

Hiroyuki KAGESHIMA

Toru Akiyama

Kenji Shiraishi

2024/2/21

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Japanese Journal of Applied Physics

Toru Akiyama

Hiroyuki KAGESHIMA

Kenji Shiraishi

2024/2/15

Ab initio study for adsorption behavior on AlN (0001) surface with steps and kinks during metal-organic vapor-phase epitaxy

Japanese Journal of Applied Physics

Toru Akiyama

Takahiro Kawamura

2024/1/29

First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures

Journal of Crystal Growth

Takahiro Kawamura

Toru Akiyama

Yoshihiro Kangawa

2024/1/15

Controversies in orthopaedic oncology

Lee M Jeys

Joachim Thorkildsen

Vineet Kurisunkal

Ajay Puri

Pietro Ruggieri

...

2024/5/1

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces

physica status solidi (b)

Toru Akiyama

Takahiro Kawamura

2024/4/7

Ⅲ 族窒化物エピタキシャル成長における成長様式の理論解析

日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth

秋山亨, 伊藤智徳

2023

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

Materials Science in Semiconductor Processing

Hiroyuki Kageshima

Toru Akiyama

Kenji Shiraishi

2023/8/1

エピタキシャル成長の量子論における新展開: シミュレーションからデジタルツインへ

日本結晶成長学会誌

秋山亨, 荒木努, 富永依里子

2023

First-principles study for self-limiting growth of GaN layers on AlN (0001) surface

Japanese Journal of Applied Physics

Haruka Sokudo

Toru Akiyama

Tomonori Ito

2023/4

III 族窒化物エピタキシャル成長における成長様式の理論解析

日本結晶成長学会誌

秋山亨, 伊藤智徳

2023

Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain

physica status solidi (b)

Takahiro Kawamura

Kouhei Basaki

Akito Korei

Toru Akiyama

Yoshihiro Kangawa

2023/8

OVPE 成長条件下における GaN 表面構造と点欠陥が GaN の光学特性へ与える影響

日本結晶成長学会誌

河村貴宏, 秋山亨, 宇佐美茂佳, 今西正幸, 吉村政志, 森勇介, 森川良忠, 寒川義裕

2023

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

ACS Applied Electronic Materials

Atsushi Kobayashi

Shunya Kihira

Toru Akiyama

Takahiro Kawamura

Takuya Maeda

...

2023/1/9

Role of charged oxygen vacancies and substrate lattice constraint on structural stability of Ga2O3 polymorphs

Applied Physics Express

Toru Akiyama

Takahiro Kawamura

Tomonori Ito

2023/1/19

First-principles study for orientation dependence of band alignments at 4H-SiC/SiO2 interface

Japanese Journal of Applied Physics

Shun Matsuda

Toru Akiyama

Tetsuo HATAKEYAMA

Kenji Shiraishi

Takashi NAKAYAMA

2023/12/25

To where do silicon atoms go? Still mysterious thermal oxidation

Oyo Buturi (Online)

Hiroyuki Kageshima

Toru Akiyama

Kenji Shiraishi

Masashi Uematsu

2022

Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

Surface Science

Toru Akiyama

Tsunashi Shimizu

Tomonori Ito

Hiroyuki Kageshima

Kenji Shiraishi

2022/9/1

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

Japanese Journal of Applied Physics

Toru Akiyama

Tsunashi Shimizu

Tomonori Ito

Hiroyuki Kageshima

Kenta Chokawa

...

2022/3/25

Influence of oxygen-related defects on the electronic structure of GaN

Japanese Journal of Applied Physics

Satoshi Ohata

Takahiro Kawamura

Toru Akiyama

Shigeyoshi Usami

Masayuki Imanishi

...

2022/5/24

See List of Professors in Toru Akiyama University(Mie University)

Co-Authors

H-index: 63
Kazumasa Hiramatsu

Kazumasa Hiramatsu

Mie University

H-index: 55
Yoshitada Morikawa

Yoshitada Morikawa

Osaka University

H-index: 53
Tamio Oguchi

Tamio Oguchi

Osaka University

H-index: 43
Koichi Kakimoto

Koichi Kakimoto

Kyushu University

H-index: 40
Hideto Miyake

Hideto Miyake

Mie University

H-index: 31
Shiro Tsukamoto

Shiro Tsukamoto

Università degli Studi di Milano-Bicocca

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