Tongtong Zhu

Tongtong Zhu

University of Cambridge

H-index: 24

Europe-United Kingdom

About Tongtong Zhu

Tongtong Zhu, With an exceptional h-index of 24 and a recent h-index of 19 (since 2020), a distinguished researcher at University of Cambridge, specializes in the field of Nitride semiconductors, Quantum dots, Single Photon Source.

His recent articles reflect a diverse array of research interests and contributions to the field:

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons

Led device and method of manufacture

Three-photon excitation of InGaN quantum dots

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Micro-led and method of manufacture

Led and method of manufacture

Semiconductor structure and method of manufacture

Wafer holder and method

Tongtong Zhu Information

University

Position

___

Citations(all)

1731

Citations(since 2020)

970

Cited By

1256

hIndex(all)

24

hIndex(since 2020)

19

i10Index(all)

54

i10Index(since 2020)

38

Email

University Profile Page

University of Cambridge

Google Scholar

View Google Scholar Profile

Tongtong Zhu Skills & Research Interests

Nitride semiconductors

Quantum dots

Single Photon Source

Top articles of Tongtong Zhu

Title

Journal

Author(s)

Publication Date

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons

Microscopy and Microanalysis

Maruf Sarkar

Francesca Adams

Sidra A Dar

Jordan Penn

Yihong Ji

...

2024/4/5

Led device and method of manufacture

2024/1/11

Three-photon excitation of InGaN quantum dots

Physical Review Letters

Viviana Villafañe

Bianca Scaparra

Manuel Rieger

Stefan Appel

Rahul Trivedi

...

2023/2/23

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Journal of Applied Physics

Yihong Ji

Martin Frentrup

Xiaotian Zhang

Jakub Pongrácz

Simon M Fairclough

...

2023/10/14

Micro-led and method of manufacture

2023/2/16

Led and method of manufacture

2023/9/14

Semiconductor structure and method of manufacture

2023/2/16

Wafer holder and method

2023/6/1

Red led and method of manufacture

2023/2/16

Method for porosifying a material and semiconductor structure

2023/5/16

Led device

2023/11/9

Method for electrochemically etching a semiconductor structure

2023/4/18

Research data supporting" Porous pseudo-substrates for InGaN quantum well growth: morphology, structure and strain relaxation"

Yihong Ji

Martin Frentrup

Xiaotian Zhang

Jakub Pongrácz

Simon Fairclough

...

2023/10/16

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced

Ultramicroscopy

TJ O'Hanlon

T Zhu

FC-P Massabuau

RA Oliver

2021/12/1

Pure single-photon emission from an InGaN/GaN quantum dot

APL Materials

MJ Holmes

T Zhu

FC-P Massabuau

J Jarman

RA Oliver

...

2021/6/1

Data set supporting" Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced"

Rachel Oliver

Tongtong Zhu

Fabien Massabuau

Thomas O'Hanlon

2021/3/19

Decreased fast time scale spectral diffusion of a nonpolar InGaN quantum dot

ACS Photonics

Claudius Kocher

John C Jarman

Tongtong Zhu

Gunnar Kusch

Rachel A Oliver

...

2021/12/29

The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence

Journal of Applied Physics

PH Griffin

KM Patel

T Zhu

RM Langford

VS Kamboj

...

2020/5/21

Research Data Supporting: The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence

Peter Griffin

Kunal Patel

Tongtong Zhu

Richard Langford

Varun Kamboj

...

2020/5/4

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

APL Materials

Fabien C-P Massabuau

Peter H Griffin

Helen P Springbett

Yingjun Liu

R Vasant Kumar

...

2020/3/1

See List of Professors in Tongtong Zhu University(University of Cambridge)

Co-Authors

H-index: 72
Colin Humphreys

Colin Humphreys

Queen Mary University of London

H-index: 69
Igor Aharonovich, FOSA, FRSN

Igor Aharonovich, FOSA, FRSN

University of Technology Sydney

H-index: 47
Philip Dawson

Philip Dawson

Manchester University

academic-engine