Taifang Wang
École Polytechnique Fédérale de Lausanne
H-index: 5
Europe-Switzerland
Top articles of Taifang Wang
Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate
Applied Physics Letters
2022/8/1
LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
2022
Taifang Wang
H-Index: 3
Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
IEEE Electron Device Letters
2022/7/11
Beyond 8 THz displacement-field nano-switches for 5G and 6G communications
2021/12/11
p-NiO junction termination extensions for GaN power devices
Applied Physics Express
2021/7/2
Taifang Wang
H-Index: 3
Elison Matioli
H-Index: 21
p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices
2021/5/30
LiNiO gate dielectric with tri-gate structure for high performance E-mode GaN transistors
2021/5/30
Taifang Wang
H-Index: 3
Mohammad Samizadeh Nikoo
H-Index: 8
Luca Nela
H-Index: 8
Elison Matioli
H-Index: 21
Multi-channel nanowire devices for efficient power conversion
Nature Electronics
2021/4
