Luca Nela
École Polytechnique Fédérale de Lausanne
H-index: 16
Europe-Switzerland
Top articles of Luca Nela
Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate
Applied Physics Letters
2022/8/1
Enhancement-mode multi-channel AlGaN/GaN transistors with LiNiO junction Tri-gate
IEEE Electron Device Letters
2022/7/11
A perspective on multi-channel technology for the next-generation of GaN power devices
Applied Physics Letters
2022/5/9
Intrinsic polarization super junctions: Design of single and multichannel GaN structures
IEEE Transactions on Electron Devices
2022/3/3
Luca Nela
H-Index: 8
Elison Matioli
H-Index: 21
New Technologies to Enhance the Figures-of-Merit of GaN Power Devices
2022
Luca Nela
H-Index: 8
p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
Applied Physics Letters
2021/12/27
Luca Nela
H-Index: 8
Elison Matioli
H-Index: 21
GaN-based power devices: Physics, reliability, and perspectives
Journal of Applied Physics
2021/11/14
Figures-of-merit of lateral GaN power devices: Modeling and comparison of HEMTs and PSJs
IEEE Journal of the Electron Devices Society
2021/11/8
Luca Nela
H-Index: 8
Elison Matioli
H-Index: 21
Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs
2021/9/23
Luca Nela
H-Index: 8
Elison Matioli
H-Index: 21
Impact of embedded liquid cooling on the electrical characteristics of GaN-on-Si power transistors
IEEE Electron Device Letters
2021/9/20
p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices
2021/5/30
High-performance enhancement-mode AlGaN/GaN multi-channel power transistors
2021/5/30
LiNiO gate dielectric with tri-gate structure for high performance E-mode GaN transistors
2021/5/30
Multi-channel nanowire devices for efficient power conversion
Nature Electronics
2021/4
Performance of GaN power devices for cryogenic applications down to 4.2 K
IEEE Transactions on Power Electronics
2020/12/25
Luca Nela
H-Index: 8
Elison Matioli
H-Index: 21
Conformal passivation of multi-channel GaN power transistors for reduced current collapse
IEEE Electron Device Letters
2020/11/17
P-GaN tri-gate MOS structure for normally-off GaN power transistors
IEEE Electron Device Letters
2020/11/10
Output-capacitance hysteresis losses of field-effect transistors
2020/11/9
Bringing the heat sink closer to the heat: Evaluating die-embedded microchannel cooling of GaN-on-Si power devices
2020/9/14
High-frequency GaN-on-Si power integrated circuits based on tri-anode SBDs
2020/9/13
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