Sung-Jin Choi
University of California, Berkeley
H-index: 78
North America-United States
Top articles of Sung-Jin Choi
Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors
Solid-State Electronics
2024/6/1
Simulation of a randomly percolated CNT network for an improved analog physical unclonable function
Scientific Reports
2024/4/16
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor
IEEE Access
2024/2/14
Hee Jun Lee
H-Index: 3
Sung-Jin Choi
H-Index: 45
Jong-Ho Bae
H-Index: 11
Jiyong Woo
H-Index: 24
Dae Hwan Kim
H-Index: 4
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell
IEEE Electron Device Letters
2024/1/31
Seongwon Lee
H-Index: 2
Haneul Lee
H-Index: 13
Sung-Jin Choi
H-Index: 45
Dae Hwan Kim
H-Index: 4
Jong-Ho Bae
H-Index: 11
Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors
ACS Applied Materials & Interfaces
2024/1/25
Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
Applied Physics Letters
2024/1/15
Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization
Nanotechnology
2023/7/19
Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors
IEEE Transactions on Electron Devices
2023/5/5
Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors
IEEE Transactions on Electron Devices
2023/3/13
Short-and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor
IEEE Access
2023/2/27
Wonjung Kim
H-Index: 15
Sung-Jin Choi
H-Index: 45
Jong-Ho Bae
H-Index: 11
Yoon Kim
H-Index: 11
Dae Hwan Kim
H-Index: 4
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique
IEEE Electron Device Letters
2023/2/3
Sung-Jin Choi
H-Index: 45
Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design
Current Applied Physics
2023/2/1
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors
Materials Science in Semiconductor Processing
2023/1/1
Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors
Nanomaterials
2022/10/13
Compact SPICE Model of Memristor with Barrier Modulated Considering Short-and Long-Term Memory Characteristics by IGZO Oxygen Content
Micromachines
2022/9/28
Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors
IEEE Electron Device Letters
2022/9/12
Physics-based compact model of current stress-induced threshold voltage shift in top-gate self-aligned amorphous InGaZnO thin-film transistors
IEEE Electron Device Letters
2022/8/29
Sungju Choi
H-Index: 7
Jong-Ho Bae
H-Index: 11
Sung-Jin Choi
H-Index: 45
Dong-Wook Park
H-Index: 13
Dae Hwan Kim
H-Index: 4
Characterization Technique for Interface Traps in Si Nanosheet GAA MOSFETs through Subthreshold IV Characteristics
2022/7/4
Analysis of Memory Window Degradation Mechanism by Unipolar and Bipolar stress in HfO₂-based FeFETs
대한전자공학회 학술대회
2022/6
Analysis on Leakage Current of Gated Diode Memory Device and Suggestion of Improved Device Structure
대한전자공학회 학술대회
2022/6
