Sung-Jin Choi

Sung-Jin Choi

University of California, Berkeley

H-index: 78

North America-United States

About Sung-Jin Choi

Sung-Jin Choi, With an exceptional h-index of 78 and a recent h-index of 49 (since 2020), a distinguished researcher at University of California, Berkeley, specializes in the field of FinFET, Schottky-barrier transistor, all-around-gate MOSFET, carbon nanotube, graphene.

His recent articles reflect a diverse array of research interests and contributions to the field:

Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Simulation of a randomly percolated CNT network for an improved analog physical unclonable function

Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

Short-and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique

Sung-Jin Choi Information

University

Position

Postdoctoral scholar

Citations(all)

27622

Citations(since 2020)

12034

Cited By

20799

hIndex(all)

78

hIndex(since 2020)

49

i10Index(all)

574

i10Index(since 2020)

331

Email

University Profile Page

University of California, Berkeley

Google Scholar

View Google Scholar Profile

Sung-Jin Choi Skills & Research Interests

FinFET

Schottky-barrier transistor

all-around-gate MOSFET

carbon nanotube

graphene

Top articles of Sung-Jin Choi

Title

Journal

Author(s)

Publication Date

Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors

ACS Applied Materials & Interfaces

Yulim An

Hanbin Lee

Jeonghee Ko

Hyo-In Yang

Gyeongsu Min

...

2024/1/25

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

Applied Physics Letters

Haesung Kim

Hyojin Yang

Seongwon Lee

Sanghyuk Yun

Junseong Park

...

2024/1/15

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Solid-State Electronics

Jingyu Park

Sangwon Lee

Seung Joo Myoung

Hyunkyu Lee

Jong-Ho Bae

...

2024/6/1

Simulation of a randomly percolated CNT network for an improved analog physical unclonable function

Scientific Reports

Hyo-In Yang

Hanbin Lee

Jeonghee Ko

Yulim An

Gyeongsu Min

...

2024/4/16

Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

IEEE Access

Tae Jun Yang

Jung Rae Cho

Hyunkyu Lee

Hee Jun Lee

Seung Joo Myoung

...

2024/2/14

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

IEEE Electron Device Letters

Seongwon Lee

Haesung Kim

Hyojin Yang

Sanghyuk Yun

Junseong Park

...

2024/1/31

Short-and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

IEEE Access

Dongyeon Kang

Wonjung Kim

Jun Tae Jang

Changwook Kim

Jung Nam Kim

...

2023/2/27

Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique

IEEE Electron Device Letters

Seung Joo Myoung

Chang Il Ryoo

Changwook Kim

Sung-Jin Choi

Dong Myong Kim

...

2023/2/3

Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design

Current Applied Physics

Tae Jun Yang

Je-Hyuck Kim

Jung Rae Cho

Hee Jun Lee

Kyungmin Kim

...

2023/2/1

Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization

Nanotechnology

Yulim An

Yongwoo Lee

Dong-Myong Kim

Dae Hwan Kim

Jong-Ho Bae

...

2023/7/19

Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors

IEEE Transactions on Electron Devices

Haesung Kim

Han Bin Yoo

Heesung Lee

Ji Hee Ryu

Ju Young Park

...

2023/5/5

Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors

Materials Science in Semiconductor Processing

Hee Jun Lee

Donguk Kim

Woo Sik Choi

Changwook Kim

Sung-Jin Choi

...

2023/1/1

Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors

IEEE Transactions on Electron Devices

Ju Young Park

Haesung Kim

Han Bin Yoo

Ji Hee Ryu

Seung Hyeop Han

...

2023/3/13

P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

SID Symposium Digest of Technical Papers

Chang Il Ryoo

Tae Jun Yang

Hee Jun Lee

Jong-Ho Bae

Sung-Jin Choi

...

2022/6

Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress

IEEE Electron Device Letters

Jingyu Park

Sungju Choi

Seung Joo Myoung

Jae-Young Kim

Changwook Kim

...

2022/12/1

Physics-based compact model of current stress-induced threshold voltage shift in top-gate self-aligned amorphous InGaZnO thin-film transistors

IEEE Electron Device Letters

Tae Jun Yang

Jingyu Park

Sungju Choi

Changwook Kim

Moonsup Han

...

2022/8/29

All-Solution-Processed Carbon Nanotube Floating Gate Memories

ACS Applied Nano Materials

Yongwoo Lee

Jinsu Yoon

Ju Won Jeon

Hanbin Lee

Jeonghee Ko

...

2022/4/25

Characterization Technique for Interface Traps in Si Nanosheet GAA MOSFETs through Subthreshold IV Characteristics

Han Bin Yoo

Haesung Kim

Yongwoo Lee

Ji Hee Ryu

Ju Young Park

...

2022/7/4

Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature

IEEE Electron Device Letters

Sangwon Lee

Jingyu Park

Ga Won Yang

Changwook Kim

Sung-Jin Choi

...

2022/11/10

Cost-effective method for fabricating carbon nanotube network transistors by reusing a 99% semiconducting carbon nanotube solution

Nanotechnology

Ju Won Jeon

Yongwoo Lee

Geon-Hwi Park

Dae Hwan Kim

Dong Myong Kim

...

2022/3/25

See List of Professors in Sung-Jin Choi University(University of California, Berkeley)