Jong-Ho Bae
University of California, Berkeley
H-index: 24
North America-United States
Top articles of Jong-Ho Bae
Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors
Solid-State Electronics
2024/6/1
InGaZnO-based synaptic transistor with embedded ZnO charge-trapping layer for reservoir computing
Sensors and Actuators A: Physical
2024/4/22
Simulation of a randomly percolated CNT network for an improved analog physical unclonable function
Scientific Reports
2024/4/16
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor
IEEE Access
2024/2/14
Hee Jun Lee
H-Index: 3
Sung-Jin Choi
H-Index: 45
Jong-Ho Bae
H-Index: 11
Jiyong Woo
H-Index: 24
Dae Hwan Kim
H-Index: 4
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell
IEEE Electron Device Letters
2024/1/31
Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors
ACS Applied Materials & Interfaces
2024/1/25
Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
Applied Physics Letters
2024/1/15
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
Advanced Electronic Materials
2024/1/8
Si‐Based Dual‐Gate Field‐Effect Transistor Array for Low‐Power On‐Chip Trainable Hardware Neural Networks
Advanced Intelligent Systems
2024/1
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V T Prediction Using Lateral Carrier Density Profiling Technique
IEEE Electron Device Letters
2023/2/3
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
Materials
2023/2/1
Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design
Current Applied Physics
2023/2/1
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors
Materials Science in Semiconductor Processing
2023/1/1
Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems
Advanced Intelligent Systems
2023/12
Efficient Hybrid Training Method for Neuromorphic Hardware Using Analog Nonvolatile Memory
IEEE Transactions on Neural Networks and Learning Systems
2023/11/24
Reconfigurable neuromorphic computing block through integration of flash synapse arrays and super-steep neurons
Science Advances
2023/7/19
Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization
Nanotechnology
2023/7/19
Hardware-Based Ternary Neural Network Using AND-Type Poly-Si TFT Array and Its Optimization Guideline
IEEE Transactions on Electron Devices
2023/7/3
1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network
Advanced Intelligent Systems
2023/6
Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors
IEEE Transactions on Electron Devices
2023/5/5
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