Seongjae Cho
Gachon University
H-index: 27
Asia-South Korea
Top articles of Seongjae Cho
A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2024/2
Synapse Array with Buried Bottom Gate Structure for Neuromorphic Systems
2023/6/11
Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2023/6
Arati Kumari Shah
H-Index: 0
Seongjae Cho
H-Index: 17
A Compact Integrate-and-Fire Neuron Circuit Embedding Operational Transconductance Amplifier for Fidelity Enhancement
IEEE Access
2023/5/30
Arati Kumari Shah
H-Index: 0
Seongjae Cho
H-Index: 17
Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study
Journal of Vacuum Science & Technology A
2023/5/12
Seongjae Cho
H-Index: 17
Byungchul Cho
H-Index: 22
Sangjoon Park
H-Index: 7
Jongwan Jung
H-Index: 23
Won-Jun Lee
H-Index: 16
Optimization of the structural complexity of artificial neural network for hardware-driven neuromorphic computing application
Applied Intelligence
2023/3
Seongjae Cho
H-Index: 17
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
Materials
2023/2/1
1T DRAM with Raised SiGe Quantum Well for Sensing Margin Improvement
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2023/2
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Nanoscale
2023
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Nanoscale
2023
An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network
IET Circuits, Devices & Systems
2023/12/26
Arati Kumari Shah
H-Index: 0
Seongjae Cho
H-Index: 17
Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies
Materials
2023/12/5
Compact Modeling of a HfO₂ Memristor Cell with Dependence on Compliance Current for Large-area Simulations
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2023/12
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
The Journal of Chemical Physics
2023/11/14
The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device
Nanomaterials
2023/10/28
Seongjae Cho
H-Index: 17
Sungjun Kim
H-Index: 18
Single-Body-Integrated Complementary Tunneling Field-Effect Transistor (SBI CTFET) and Design Consideration of Processing Margin in Dual-Gate Formation
2023/10/23
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
Journal of Semiconductor Technology and Science
2023/8
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces
2023/7
Corrigendum to" Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules"[Appl. Surf. Sci. 554 (2021) 149481]
Applied Surface Science
2022/11
Facile Synthesis of Biocarbon-Based MoS2 Composite for High-Performance Supercapacitor Application
Nano letters
2022/10/4
Seongjae Cho
H-Index: 17
Co-Authors
