Hyungcheol Shin
Seoul National University
H-index: 39
Asia-South Korea
Top articles of Hyungcheol Shin
Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory
IEEE Journal of the Electron Devices Society
2024/3/8
Jongwoo Kim
H-Index: 5
Hyungcheol Shin
H-Index: 17
A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories
IEEE Transactions on Electron Devices
2024/2/16
Hyungcheol Shin
H-Index: 17
A more practical indicator of MAC operational power efficiency inside memory-based synapse array
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2024/2
Investigation of Endurance Characteristics in 3-D nand Flash Memory With Trap Profile Analysis
IEEE Transactions on Electron Devices
2024/1/22
Monte Carlo Simulator for Threshold Voltage Distribution of 3-D nand Flash Memory Using Machine Learning
IEEE Transactions on Electron Devices
2023/12/5
Hyungcheol Shin
H-Index: 17
Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs
IEEE Transactions on Electron Devices
2023/12/1
Juhyun Kim
H-Index: 17
Hyungcheol Shin
H-Index: 17
An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory
IEEE Transactions on Electron Devices
2023/10/17
Jongwoo Kim
H-Index: 5
Hyungcheol Shin
H-Index: 17
Modeling of Threshold Voltage Shift by Neighboring Transistors for Macaroni Channel MOSFETs in Series
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
2023/8/7
Quan Nguyen-Gia
H-Index: 2
Hyungcheol Shin
H-Index: 17
Synapse Array with Buried Bottom Gate Structure for Neuromorphic Systems
2023/6/11
A Compact Model for Transient Program Operation of Barrier Engineered Charge-Trapping NAND Flash Memories
대한전자공학회 학술대회
2023/6
Hyungcheol Shin
H-Index: 17
A Novel Read Scheme using GIDL Current to Suppress Read Disturbance in 3-D NAND Flash Memories
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
2023/5/30
Jongwoo Kim
H-Index: 5
Hyungcheol Shin
H-Index: 17
Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide
IEICE Electronics Express
2022/12/25
Modeling of grain boundary barrier height for undoped polycrystalline silicon channel in macaroni MOSFETs
IEEE Transactions on Electron Devices
2022/3/25
Juhyun Kim
H-Index: 17
Hyungcheol Shin
H-Index: 17
Investigation and modeling of Z-interference in poly-Si channel-based 3-D NAND flash memories
IEEE Transactions on Electron Devices
2022/1/4
Hyungcheol Shin
H-Index: 17
28nm CIS-compatible embedded STT-MRAM for frame buffer memory
2021/12/11
Prediction of random grain boundary variation effect of 3-D NAND flash memory using a machine learning approach
IEEE Transactions on Electron Devices
2021/12/7
Hyungcheol Shin
H-Index: 17
Distinguishing capture cross-section parameter between GIDL erase compact model and TCAD
Japanese Journal of Applied Physics
2021/11/30
Hyungcheol Shin
H-Index: 17
Analysis of the effect of residual holes on lateral migration during the retention operation in 3-D NAND flash memory
IEEE Transactions on Electron Devices
2021/10/29
Shinkeun Kim
H-Index: 1
Hyungcheol Shin
H-Index: 17
Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories
IEICE Electronics Express
2021/10/10
Hyungcheol Shin
H-Index: 17
A potential model of triple macaroni channel MOSFETs in subthreshold region
IEEE Transactions on Electron Devices
2021/7/14
Quan Nguyen-Gia
H-Index: 2
Hyungcheol Shin
H-Index: 17
