Stefano OSSICINI

About Stefano OSSICINI

Stefano OSSICINI, With an exceptional h-index of 46 and a recent h-index of 17 (since 2020), a distinguished researcher at Università degli Studi di Modena e Reggio Emilia, specializes in the field of Physics, Materials Science, Nanoscience and Nanotechnology, Photovoltaics, Photonic.

His recent articles reflect a diverse array of research interests and contributions to the field:

L'aureola della gloria. Huygens, Newton e la natura della luce.

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

Multiple Exciton Generation in Isolated and Interacting Silicon Nanocrystals

(Invited) Electronic and Optical Properties of Si, Ge and Sige Low Dimensional Systems: Ab-Initio Results

Il cristallo e la balena

Doping of III–V Arsenide and Phosphide Wurtzite Semiconductors

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Breve viaggio multilingue nel nanomondo

Stefano OSSICINI Information

University

Position

Full Professor Physics

Citations(all)

9469

Citations(since 2020)

1380

Cited By

8664

hIndex(all)

46

hIndex(since 2020)

17

i10Index(all)

123

i10Index(since 2020)

31

Email

University Profile Page

Google Scholar

Stefano OSSICINI Skills & Research Interests

Physics

Materials Science

Nanoscience and Nanotechnology

Photovoltaics

Photonic

Top articles of Stefano OSSICINI

Title

Journal

Author(s)

Publication Date

L'aureola della gloria. Huygens, Newton e la natura della luce.

Stefano Ossicini

2023

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

The Journal of Physical Chemistry C

Ivan Marri

Stefano Ossicini

Michele Amato

Simone Grillo

Olivia Pulci

2023

Multiple Exciton Generation in Isolated and Interacting Silicon Nanocrystals

Nanoscale

Ivan Marri

Stefano Ossicini

2021

(Invited) Electronic and Optical Properties of Si, Ge and Sige Low Dimensional Systems: Ab-Initio Results

Electrochemical Society Meeting Abstracts 239

Ivan Marri

Stefano Ossicini

2021/5/30

Il cristallo e la balena

Stefano Ossicini

Charlotte Ossicini

2021

Doping of III–V Arsenide and Phosphide Wurtzite Semiconductors

The Journal of Physical Chemistry C

Giacomo Giorgi

Michele Amato

Stefano Ossicini

Xavier Cartoixà

Enric Canadell

...

2020/11/30

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Faraday Discussions

Stefano Ossicini

Ivan Marri

Michele Amato

Maurizia Palummo

Enric Canadell

...

2020/6/24

Breve viaggio multilingue nel nanomondo

Stefano Ossicini

2020

Surface chemistry effects on work function, ionization potential and electronic affinity of Si (100), Ge (100) surfaces and SiGe heterostructures

Physical Chemistry Chemical Physics

Ivan Marri

Michele Amato

Matteo Bertocchi

Andrea Ferretti

Daniele Varsano

...

2020

See List of Professors in Stefano OSSICINI University(Università degli Studi di Modena e Reggio Emilia)

Co-Authors

academic-engine