ivan marri

About ivan marri

ivan marri, With an exceptional h-index of 20 and a recent h-index of 10 (since 2020), a distinguished researcher at Università degli Studi di Modena e Reggio Emilia, specializes in the field of carrier multiplication, nanocrystals, auger recombination.

His recent articles reflect a diverse array of research interests and contributions to the field:

Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals

Evolution of the electronic and optical properties of meta-stable allotropic forms of 2D tellurium for increasing number of layers

Multiple exciton generation in isolated and interacting silicon nanocrystals

(Invited) Electronic and Optical Properties of Si, Ge and Sige Low Dimensional Systems: Ab-Initio Results

Surface chemistry effects on work function, ionization potential and electronic affinity of Si (100), Ge (100) surfaces and SiGe heterostructures

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

ivan marri Information

University

Position

___

Citations(all)

1375

Citations(since 2020)

624

Cited By

976

hIndex(all)

20

hIndex(since 2020)

10

i10Index(all)

21

i10Index(since 2020)

10

Email

University Profile Page

Google Scholar

ivan marri Skills & Research Interests

carrier multiplication

nanocrystals

auger recombination

Top articles of ivan marri

Title

Journal

Author(s)

Publication Date

Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals

The Journal of Physical Chemistry C

Ivan Marri

Stefano Ossicini

Michele Amato

Simone Grillo

Olivia Pulci

2023

Evolution of the electronic and optical properties of meta-stable allotropic forms of 2D tellurium for increasing number of layers

Nanomaterials

Simone Grillo

Olivia Pulci

Ivan Marri

2022/7/21

Multiple exciton generation in isolated and interacting silicon nanocrystals

Nanoscale

Ivan Marri

Stefano Ossicini

2021

(Invited) Electronic and Optical Properties of Si, Ge and Sige Low Dimensional Systems: Ab-Initio Results

Electrochemical Society Meeting Abstracts 239

Ivan Marri

Stefano Ossicini

2021/5/30

Surface chemistry effects on work function, ionization potential and electronic affinity of Si (100), Ge (100) surfaces and SiGe heterostructures

Physical Chemistry Chemical Physics

Ivan Marri

Michele Amato

Matteo Bertocchi

Andrea Ferretti

Daniele Varsano

...

2020

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Faraday Discussions

Stefano Ossicini

Ivan Marri

Michele Amato

Maurizia Palummo

Enric Canadell

...

2020/6/24

See List of Professors in ivan marri University(Università degli Studi di Modena e Reggio Emilia)