Simon Hammersley

Simon Hammersley

Manchester University

H-index: 12

North America-United States

About Simon Hammersley

Simon Hammersley, With an exceptional h-index of 12 and a recent h-index of 9 (since 2020), a distinguished researcher at Manchester University, specializes in the field of Semiconductor Physics, Spectrocopy, GaN, InGaN, Quantum Wells.

His recent articles reflect a diverse array of research interests and contributions to the field:

Research data supporting" Optical and structural properties of dislocations in InGaN"

Improved Interface of Encapsulating Sm-Doped TiO2 Thin Films/RuO2 Schottky Diodes for a Junction Spectropy Measurement

Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence

Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

GaN surface sputter damage investigated using deep level transient spectroscopy

Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms

Simon Hammersley Information

University

Position

Research Associate

Citations(all)

492

Citations(since 2020)

255

Cited By

364

hIndex(all)

12

hIndex(since 2020)

9

i10Index(all)

13

i10Index(since 2020)

8

Email

University Profile Page

Manchester University

Google Scholar

View Google Scholar Profile

Simon Hammersley Skills & Research Interests

Semiconductor Physics

Spectrocopy

GaN

InGaN

Quantum Wells

Top articles of Simon Hammersley

Title

Journal

Author(s)

Publication Date

Research data supporting" Optical and structural properties of dislocations in InGaN"

Fabien Massabuau

Matthew K Horton

Emma Pearce

Simon Hammersley

Peiyu Chen

...

2023/1/19

Improved Interface of Encapsulating Sm-Doped TiO2 Thin Films/RuO2 Schottky Diodes for a Junction Spectropy Measurement

Optics and Photonics Journal

Mariko Murayama

Yuri Tamamoto

Yingda Qian

Asuka Ishizawa

Simon Hammersley

...

2022/10/28

Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence

Nanoscale

Gunnar Kusch

Ella J Comish

Kagiso Loeto

Simon Hammersley

Menno J Kappers

...

2022

Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

Journal of Physics D: Applied Physics

SA Church

GM Christian

RM Barrett

Simon Hammersley

Menno J Kappers

...

2021/9/10

GaN surface sputter damage investigated using deep level transient spectroscopy

Materials science in semiconductor processing

Xiaoyan Tang

Simon Hammersley

Vladimir Markevich

Ian Hawkins

Iain Crowe

...

2021/5/1

Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms

Joyce Ann T De Guzman

Vladimir P Markevich

Simon Hammersley

Ian D Hawkins

Iain Crowe

...

2020/6/15

See List of Professors in Simon Hammersley University(Manchester University)

Co-Authors

H-index: 72
Colin Humphreys

Colin Humphreys

Queen Mary University of London

H-index: 47
Philip Dawson

Philip Dawson

Manchester University

H-index: 46
Rachel Oliver

Rachel Oliver

University of Cambridge

H-index: 34
Michelle Moram

Michelle Moram

Imperial College London

H-index: 28
Stefan Schulz

Stefan Schulz

University College Cork

H-index: 28
Duncan Watson-Parris

Duncan Watson-Parris

University of Oxford

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