Sergio Fernández-Garrido
Universidad Autónoma de Madrid
H-index: 33
Europe-Spain
Top articles of Sergio Fernández-Garrido
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si | arXiv preprint arXiv:2403.19230 | Paula Mouriño Laura Mercadé Miguel Sinusía Lozano Raquel Resta Amadeu Griol | 2024/3/28 |
Growth modes and chemical-phase separation in GaP1− xNx layers grown by chemical beam epitaxy on GaP/Si (001) | Journal of Applied Physics | K Ben Saddik S Fernández-Garrido R Volkov J Grandal N Borgardt | 2023/11/7 |
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy | APL Materials | David van Treeck Jonas Lähnemann Guanhui Gao Sergio Fernández-Garrido Oliver Brandt | 2023/9/1 |
X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy | Journal of Applied Crystallography | Vladimir M Kaganer Oleg V Konovalov Gabriele Calabrese David van Treeck Albert Kwasniewski | 2023/4/1 |
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si (111) | Nanoscale Advances | Roman Volkov Nikolai I Borgardt Oleg V Konovalov Sergio Fernández-Garrido Oliver Brandt | 2022 |
Luminescence properties of GaP1−xNx alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy | K Ben Saddik P Álamo J Lähnemann R Volkov NI Borgardt | 2022/6/1 | |
Interface recombination in Ga-and N-polar GaN/(Al, Ga) N quantum wells grown by molecular beam epitaxy | Physical Review Applied | Thomas Auzelle Chiara Sinito Jonas Lähnemann Guanhui Gao Timur Flissikowski | 2022/4/15 |
Small-angle X-ray scattering from GaN nanowires on Si (111): facet truncation rods, facet roughness and Porod's law | Acta Crystallographica Section A: Foundations and Advances | Vladimir M Kaganer Oleg V Konovalov Sergio Fernández-Garrido | 2021/1/1 |
A growth diagram for chemical beam epitaxy of GaP1− xNx alloys on nominally (001)-oriented GaP-on-Si substrates | APL Materials | Karim Ben Saddik Basilio J García Sergio Fernández-Garrido | 2021/12/1 |
Growth of silicon-and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors | Journal of Crystal Growth | K Ben Saddik AF Braña N López BJ García S Fernández-Garrido | 2021/10/1 |
Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields | ACS Photonics | Thomas Auzelle Mani Azadmand Timur Flissikowski Manfred Ramsteiner Katrin Morgenroth | 2021/5/12 |
External control of GaN band bending using phosphonate self-assembled monolayers | ACS Applied Materials & Interfaces | Thomas Auzelle Florian Ullrich Sebastian Hietzschold Chiara Sinito Stefan Brackmann | 2021/1/13 |
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si (001) by chemical vapour transport | Nanotechnology | S. Fernández-Garrido C. Pisador J. Lähnemann S. Lazić A. Ruiz | 2020/9/8 |
Radius-dependent homogeneous strain in uncoalesced GaN nanowires | Acta Materialia | G Calabrese D van Treeck VM Kaganer O Konovalov P Corfdir | 2020/8/15 |
Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy | Physical Review Materials | David van Treeck Sergio Fernández-Garrido Lutz Geelhaar | 2020/1/27 |
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