Laurent Cerutti

Laurent Cerutti

Université de Montpellier

H-index: 37

Europe-France

About Laurent Cerutti

Laurent Cerutti, With an exceptional h-index of 37 and a recent h-index of 26 (since 2020), a distinguished researcher at Université de Montpellier, specializes in the field of Molecular Beam Epitaxy, III-V Semiconductor, Optoelectronic.

His recent articles reflect a diverse array of research interests and contributions to the field:

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Single mode distributed feedback interband cascade lasers grown on Si substrate

Mid-IR lasers on group-IV substrates

Engineering the Infrared Optical Response of Plasmonic Structures with ϵ‐Near‐Zero III‐V Semiconductors

Distribution initiale de phase et enfouissement des domaines d'antiphase lors de la croissance III-Vs/Si (001)

Epitaxial integration of mid-infrared III-V devices on group-IV substrates

Monolithic integration of InAs-based quantum cascade lasers on germanium

Free-Space Gigabit Data Transmission with a Directly Modulated Interband Cascade Laser Epitaxially Grown on Silicon

Laurent Cerutti Information

University

Position

___

Citations(all)

4462

Citations(since 2020)

2037

Cited By

3296

hIndex(all)

37

hIndex(since 2020)

26

i10Index(all)

96

i10Index(since 2020)

64

Email

University Profile Page

Université de Montpellier

Google Scholar

View Google Scholar Profile

Laurent Cerutti Skills & Research Interests

Molecular Beam Epitaxy

III-V Semiconductor

Optoelectronic

Top articles of Laurent Cerutti

Title

Journal

Author(s)

Publication Date

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Optics Express

Maeva Fagot

Daniel A Díaz-Thomas

Audrey Gilbert

Gad Kombila

Michel Ramonda

...

2024/3/25

Single mode distributed feedback interband cascade lasers grown on Si substrate

Daniel Andres Diaz Thomas

Maeva Fagot

Gad Ndemengoye-Kombila

Audrey Gilbert

Diba Ayache

...

2024/3/13

Mid-IR lasers on group-IV substrates

Michele Paparella

Andres Remis

Audrey Gilbert

Kumar Kinjalk

Daniel Diaz-Thomas

...

2024/3/9

Engineering the Infrared Optical Response of Plasmonic Structures with ϵ‐Near‐Zero III‐V Semiconductors

Advanced Optical Materials

Pierre Fehlen

Julien Guise

Guillaume Thomas

Fernando Gonzalez‐Posada

Patricia Loren

...

2024/2

Distribution initiale de phase et enfouissement des domaines d'antiphase lors de la croissance III-Vs/Si (001)

A Gilbert

JB Rodriguez

M Rio Calvo

M Ramonda

L Cerutti

...

2023/7/3

Epitaxial integration of mid-infrared III-V devices on group-IV substrates

Eric Tournié

J-B Rodriguez

L Cerutti

A Gilbert

M Silvestre

...

2023/9/18

Monolithic integration of InAs-based quantum cascade lasers on germanium

K Kinjalk

A Gilbert

A Remis

Z Loghmari

L Cerutti

...

2023/3/13

Free-Space Gigabit Data Transmission with a Directly Modulated Interband Cascade Laser Epitaxially Grown on Silicon

S Zaminga

P Didier

H Kim

DA Díaz-Thomas

AN Baranov

...

2023/11/12

Présentation du GIP-CNFM-CIME Nanotech

Abdelhamid Aitoumeri

2023/5/26

GaSb-based Interband cascade lasers grown onto silicon substrates

Laurent Cerutti

Daniel A Díaz Thomas

Maëva Fagot

Audrey Gilbert

Gad Ndemengoye-Kombila

...

2023/3/20

ICLs à 3, 3 µm sur substrats de GaSb, GaAs et Si (001)

Maeva Fagot

Daniel Andres Diaz-Thomas

Audrey Gilbert

Michel Ramonda

Gad Kombila

...

2023/7/3

0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation

J Guise

H Ratovo

M Thual

J Hesler

T Reck

...

2023/9/17

Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon

Journal of Applied Physics

Andres Remis

Laura Monge-Bartolomé

Guilhem Boissier

Mounir Waguaf

Jean-Baptiste Rodriguez

...

2023/3/7

Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature

Journal of Applied Physics

J Guise

H Ratovo

Monique Thual

P Fehlen

F Gonzalez-Posada Flores

...

2023/10/28

Mid-IR lasers epitaxially integrated onto Si

E Tournié

A Remis

M Paparella

A Gilbert

L Monge-Bartolomé

...

2023/5/16

III-V semiconductor plasmonics for gas sensing of organophosphorous compounds

Pierre Fehlen

Guillaume Thomas

Fernando Gonzalez Posada

Julien Guise

Francesco Rusconi

...

2023/3/17

A numerical and experimental butt-coupling analysis of GaSb diode laser grown on Silicon photonic integrated circuit

Michele Paparella

Andres Remis

Laura Monge Bartolome

Jean-Baptiste Rodriguez

Laurent Cerutti

...

2023/6/26

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Advanced Optical Materials

Audrey Gilbert

Michel Ramonda

Laurent Cerutti

Charles Cornet

Gilles Patriarche

...

2023/8

Gas sensing of organophosphorous compounds with III–V semiconductor plasmonics

Sensors and Actuators B: Chemical

Pierre Fehlen

Guillaume Thomas

Fernando Gonzalez-Posada

Julien Guise

Francesco Rusconi

...

2023/2/1

The direct epitaxy of III-V lasers on Silicon (Si) substrates has been considered for decades as an important objective for the realization of integrated photonics chips. Major …

Tournié Eric

M Paparella

A Remis

A Gilbert

M Rio-Calvo

...

2023/9/30

See List of Professors in Laurent Cerutti University(Université de Montpellier)