Sangwan Kim
Ajou University
H-index: 22
Asia-South Korea
Top articles of Sangwan Kim
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction | Journal of Semiconductor Technology and Science | Chaewon Yun Sangwan Kim Seongjae Cho Il Hwan Cho Hyunwoo Kim | 2023/8 |
Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation | Semiconductor Science and Technology | Garam Kim Hyunwoo Kim Sangwan Kim Jang Hyun Kim | 2023/12/12 |
Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | Min Gyu Jeon Kang Lee Sangwan Kim Garam Kim Jang Hyun Kim | 2022/4/1 |
Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure | IEEE Transactions on Electron Devices | Young Suh Song Sangwan Kim Jang Hyun Kim Garam Kim Jong-Ho Lee | 2022/12/15 |
Design optimization of heterojunction 1T DRAM cell with SiGe body/drain for high performance | Semiconductor Science and Technology | Seungwon Go Shinhee Kim Dong Keun Lee Jae Yeon Park Sora Park | 2022/11/7 |
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design | Solid-State Electronics | Young Suh Song Ki Yeong Kim Tae Young Yoon Seok Jung Kang Garam Kim | 2022/11/1 |
Reliable high-voltage drain-extended FinFET with thermoelectric improvement | IEEE Transactions on Electron Devices | Ki Yeong Kim Young Suh Song Garam Kim Sangwan Kim Jang Hyun Kim | 2022/10/10 |
Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | Kang Lee Sangwan Kim Garam Kim Jang Hyun Kim | 2022/8 |
Point-contact enabled reliable and low-voltage memristive switching and artificial synapse from highly transparent all-oxide-integration | Journal of Alloys and Compounds | Mohit Kumar Heecheol Shin Hyobin Choi Ji-Yong Park Sangwan Kim | 2021/3/15 |
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor | Solid-State Electronics | Shinhee Kim Jae Yeon Park Seungwon Go Hyug Su Kwon Woo Young Choi | 2021/1/1 |
Simulation study about negative capacitance effects on recessed channel tunnel FET | Japanese Journal of Applied Physics | Shinhee Kim Seungwon Go Sangwan Kim | 2021/4/16 |
Light‐Regulated Mott Transition for On‐Demand Multilevel Memory Storage, Processing, and Energy Efficient Machine Vision | Advanced Electronic Materials | Mohit Kumar Chaitali Jagannath Pawase Hyobin Choi Sangwan Kim Hyungtak Seo | 2021/4 |
Photon-triggered self-powered all electronics with graphene-silicon hybrid device | Nano Energy | Mohit Kumar Jaeseong Lim Hyunwoo Kang Sangwan Kim Hyungtak Seo | 2021/4/1 |
Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design | Japanese Journal of Applied Physics | Young Suh Song Sangwan Kim Garam Kim Hyunwoo Kim Jong-Ho Lee | 2021/3/25 |
Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure | IEEE Transactions on Electron Devices | Donghyun Ryu Munhyeon Kim Junsu Yu Sangwan Kim Jong-Ho Lee | 2020/3/5 |
A novel vector-matrix multiplication (VMM) architecture based on NAND memory array | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | Suhyeon Kim Myung-Hyun Baek Sungmin Hwang Taejin Jang Kyungchul Park | 2020/6 |
Analysis of work-function variation effects in a tunnel field-effect transistor depending on the device structure | Applied Sciences | Garam Kim Jang Hyun Kim Jaemin Kim Sangwan Kim | 2020/8/4 |
Methodology to investigate impact of grain orientation on threshold voltage and current variability in tunneling field-effect transistors | IEEE Journal of the Electron Devices Society | Jang Hyun Kim Tae Chan Kim Garam Kim Hyun Woo Kim Sangwan Kim | 2020/10/23 |
Negative capacitance effect on MOS structure: Influence of electric field variation | IEEE Transactions on Nanotechnology | Kitae Lee Junil Lee Sihyun Kim Ryoongbin Lee Soyoun Kim | 2020/2/14 |
Rigorous study on hump phenomena in surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) | Applied Sciences | Seung-Hyun Lee Jeong-Uk Park Garam Kim Dong-Woo Jee Jang Hyun Kim | 2020/5/22 |
Co-Authors
