Asif Khan

Asif Khan

Georgia Institute of Technology

H-index: 34

North America-United States

About Asif Khan

Asif Khan, With an exceptional h-index of 34 and a recent h-index of 29 (since 2020), a distinguished researcher at Georgia Institute of Technology, specializes in the field of ferroelectrics and ferroics, semiconductor devices, negative capacitance.

His recent articles reflect a diverse array of research interests and contributions to the field:

Machine Learning-Assisted Statistical Variation Analysis of Ferroelectric Transistor: From Experimental Metrology to Adaptive Modeling

Interfacial Oxide Layer Scavenging in Ferroelectric Hf0. 5Zr0. 5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages

Immediate Read-After-Write Capability in p-Type Ferroelectric Field-Effect Transistors and Its Evolution With Fatigue Cycling

Conditions for Domain-Free Negative Capacitance

Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance

Reliability of ferroelectric devices

Design of Ferroelectric-Metal Field-Effect Transistor for Multi-Level-Cell 3D NAND Flash

Tunable Non-volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

Asif Khan Information

University

Position

Assistant Professor School of Electrical and Computer Engineering

Citations(all)

5923

Citations(since 2020)

4399

Cited By

3053

hIndex(all)

34

hIndex(since 2020)

29

i10Index(all)

75

i10Index(since 2020)

67

Email

University Profile Page

Georgia Institute of Technology

Google Scholar

View Google Scholar Profile

Asif Khan Skills & Research Interests

ferroelectrics and ferroics

semiconductor devices

negative capacitance

Top articles of Asif Khan

Title

Journal

Author(s)

Publication Date

Machine Learning-Assisted Statistical Variation Analysis of Ferroelectric Transistor: From Experimental Metrology to Adaptive Modeling

IEEE Transactions on Electron Devices

Gihun Choe

Prasanna Venkatesan Ravindran

Jae Hur

Maximilian Lederer

André Reck

...

2023/2/24

Interfacial Oxide Layer Scavenging in Ferroelectric Hf0. 5Zr0. 5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages

IEEE Transactions on Electron Devices

Chinsung Park

Harshil Kashyap

Dipjyoti Das

Jae Hur

Nujhat Tasneem

...

2023/8

Immediate Read-After-Write Capability in p-Type Ferroelectric Field-Effect Transistors and Its Evolution With Fatigue Cycling

IEEE Transactions on Device and Materials Reliability

Nujhat Tasneem

Zheng Wang

Hang Chen

Shimeng Yu

Winston Chern

...

2023/1/27

Conditions for Domain-Free Negative Capacitance

IEEE Transactions on Electron Devices

Prasanna Venkatesan Ravindran

Priyankka Gundlapudi Ravikumar

Asif Islam Khan

2023/6/26

Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance

Sharadindu Gopal Kirtania

Khandker Akif Aabrar

Asif I Khan

Shimeng Yu

S Datta

2023/6/11

Reliability of ferroelectric devices

Priyankka Gundlapudi Ravikumar

Asif Khan

2023/11/17

Design of Ferroelectric-Metal Field-Effect Transistor for Multi-Level-Cell 3D NAND Flash

Sola Woo

Gihun Choe

Asif Islam Khan

Suman Datta

Shimeng Yu

2023/5/21

Tunable Non-volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

IEEE Electron Device Letters

Tae-Hyeon Kim

Omkar Phadke

Yuan-Chun Luo

Halid Mulaosmanovic

Johannes Mueller

...

2023/9/1

Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors

Omkar Phadke

Khandker Akif Aabrar

Yuan-chun Luo

Sharadindu Gopal Kirtania

Asif Islam Khan

...

2023/3/26

Quantitative Electrostatic Potential Mapping in Dense Polycrystalline Functional Materials and Devices

Daniel B Durham

Khandker Akif Aabrar

Prasanna Venkatesan Ravindran

Nestor J Zaluzec

Liliana Stan

...

2023/8/1

Standby Bias Improves the Endurance in Ferroelectric Field Effect Transistors due to Fast Neutralization of Interface Traps

Zheng Wang

Nujhat Tasneem

Jae Hur

Hang Chen

Shimeng Yu

...

2022/4/18

Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study

IEEE Transactions on Electron Devices

Nujhat Tasneem

Muhammad M Islam

Zheng Wang

Zijian Zhao

Navnidhi Upadhyay

...

2022/1/25

Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature

IEEE Transactions on Electron Devices

Jae Hur

Chinsung Park

Gihun Choe

Prasanna Venkatesan Ravindran

Asif Islam Khan

...

2022/8/31

Nonvolatile Capacitive Crossbar Array for In‐Memory Computing

Advanced Intelligent Systems

Jae Hur

Yuan-Chun Luo

Anni Lu

Tzu-Han Wang

Shaolan Li

...

2022/8

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Nature communications

Michael Hoffmann

Zheng Wang

Nujhat Tasneem

Ahmad Zubair

Prasanna Venkatesan Ravindran

...

2022/3/9

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2

ACS Applied Materials & Interfaces

Kisung Chae

Sarah F Lombardo

Nujhat Tasneem

Mengkun Tian

Harish Kumarasubramanian

...

2022/8/5

A Ge-Channel Ferroelectric Field Effect Transistor with Logic-Compatible Write Voltage

IEEE Electron Device Letters

Dipjyoti Das

Prasanna Venkatesan Ravindran

Chinsung Park

Nujhat Tasneem

Zheng Wang

...

2022/12/20

Quantum phase transition in ferroelectric-paraelectric heterostructures

arXiv preprint arXiv:2203.02058

Prasanna Venkatesan Ravindran

Asif Islam Khan

2022/3/3

Improved Endurance with Electron-Only Switching in Ferroelectric Devices

Zheng Wang

Nujhat Tasneem

Hang Chen

Shimeng Yu

Winston Chern

...

2022/6/26

An Empirical Compact Model for Ferroelectric Field-Effect Transistor Calibrated to Experimental Data

IEEE Transactions on Electron Devices

Zheng Wang

Nujhat Tasneem

Muhammad M Islam

Hang Chen

Jae Hur

...

2022/2/7

See List of Professors in Asif Khan University(Georgia Institute of Technology)