Michael Dudley
Stony Brook University
H-index: 47
North America-United States
Top articles of Michael Dudley
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Atomistic simulations of deposition and growth of SiC crystal on 4H-SiC (0001) Si-face substrate | Bulletin of the American Physical Society | Kevin Kayang Balaji Raghothamachar Michael Dudley Dilip Gersappe | 2024/3/6 |
Defect-curing effects of fast neutrons on n-type GaN | Materials Chemistry and Physics | Jeongwoo Kim Yafei Liu Balaji Raghothamachar Michael Dudley Jae W Kwon | 2024/3/1 |
Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals | Journal of Crystal Growth | Shanshan Hu Yafei Liu Qianyu Cheng Zeyu Chen Xiao Tong | 2024/2/15 |
Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography | Journal of Crystal Growth | Zeyu Chen Yafei Liu Qianyu Cheng Shanshan Hu Balaji Raghothamachar | 2024/2/1 |
Investigation of Static Performances of 1.2 kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’Ion Implantations | IEEE Journal of the Electron Devices Society | Stephen A Mancini Seung Yup Jang Zeyu Chen Dongyoung Kim Alex Bialy | 2024/1/30 |
Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations | Materials Science in Semiconductor Processing | Qianyu Cheng Zeyu Chen Shanshan Hu Yafei Liu Balaji Raghothamachar | 2024/5/1 |
Characterization of prismatic slip in SiC crystals by chemical etching method | Materials Science Forum | Shan Shan Hu Shuai Fang Yafei Liu Qian Yu Cheng Hong Yu Peng | 2023/6/26 |
Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers | Scripta Materialia | Nadeemullah A Mahadik Robert E Stahlbush Michael Dudley Balaji Raghothamachar M Hinojosa | 2023/10/1 |
Investigating the Distribution Pattern of Threading Edge Dislocation Low Angle Grain Boundaries in 4H-SiC Wafers Using Synchrotron X-Ray Topography | Electrochemical Society Meeting Abstracts 244 | Qianyu Cheng Yafei Liu Zeyu Chen Shanshan Hu Balaji Raghothamachar | 2023/12/22 |
Application of Synchrotron X-Ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power Devices | ECS Transactions | Yafei Liu Shanshan Hu Zeyu Chen Qianyu Cheng Balaji Raghothamachar | 2023/5/19 |
Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers | Defect and Diffusion Forum | Qian Yu Cheng Hong Yu Peng Ze Yu Chen Shan Shan Hu Yafei Liu | 2023/7/6 |
Investigation of Growth Sectors in Gallium Nitride Substrate Wafers from Ammonothermal and Patterned Hvpe Growth Methods | Electrochemical Society Meeting Abstracts 244 | Yafei Liu Shanshan Hu Zeyu Chen Qianyu Cheng Balaji Raghothamachar | 2023/12/22 |
Analysis of Basal Plane Dislocation Motion Induced by P+ Ion Implantation Using Synchrotron X-ray Topography | Defect and Diffusion Forum | Ze Yu Chen Yafei Liu Hong Yu Peng Qian Yu Cheng Shan Shan Hu | 2023/7/6 |
Synchrotron X-Ray Topography Studies for Defect Formation at the Early Stage of PVT-Grown 4H-SiC Crystals | Electrochemical Society Meeting Abstracts 244 | Shanshan Hu Yafei Liu Qianyu Cheng Zeyu Chen Balaji Raghothamachar | 2023/12/22 |
Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC | Defect and Diffusion Forum | Gil Chung Robert Viveros Charles Lee Andrey Soukhojak Vladimir Pushkarev | 2023/6/30 |
Edge Termination Design Considerations for 1.2 kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations | Stephen A Mancini Seung Yup Jang Zeyu Chen Dongyoung Kim Balaji Raghothamachar | 2023/12/4 | |
Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide | Defect and Diffusion Forum | Hong Yu Peng Yafei Liu Ze Yu Chen Qian Yu Cheng Shan Shan Hu | 2023/6/30 |
Upgraded LauePt4 for rapid recognition and fitting of Laue patterns from crystals with unknown orientations | Journal of Applied Crystallography | Vincent W Huang Yafei Liu Balaji Raghothamachar Michael Dudley | 2023/10/1 |
Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution | Journal of Applied Crystallography | Hongyu Peng Zeyu Chen Yafei Liu Balaji Raghothamachar Xianrong Huang | 2022/6/1 |
Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers | Materials Science Forum | Qian Yu Cheng Hong Yu Peng Shan Shan Hu Ze Yu Chen Yafei Liu | 2022/6/30 |
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