Marek Skowronski
Carnegie Mellon University
H-index: 57
North America-United States
Top articles of Marek Skowronski
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Electrical conductivity of TaOx as function of composition and temperature | Journal of Non-Crystalline Solids | Kefei Bao Jingjia Meng Jonathan D Poplawsky Marek Skowronski | 2023/10/1 |
Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy | ACS Applied Electronic Materials | Jingjia Meng Jonathan M Goodwill Evgheni Strelcov Kefei Bao Jabez J McClelland | 2023/4/10 |
Material instabilities in the TaOx-based resistive switching devices | Marek Skowronski | 2023/3/26 | |
Growth dominated crystallization of GeTe mushroom cells during partial SET operation | Journal of Applied Physics | Yiqi Yu Marek Skowronski | 2023/1/28 |
Observation and modelling of homogenous nucleation in Ge 2 Sb 2 Te 5 mushroom cells during SET operation | Journal of Materials Chemistry C | Yiqi Yu Marek Skowronski | 2023 |
Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB | CS Bonifacio ML Ray PE Fischione Y Yu M Skowronski | 2023/11/12 | |
Density of amorphous sputtered Ge2Sb2Te5 thin films | AIP Advances | Q Zhang C Lian Q Xu Y Yu M Skowronski | 2023/1/1 |
Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells | AIP Advances | Qiyun Xu Enkui Lian Phoebe Yeoh Marek Skowronski | 2022/6/1 |
Modeling of the Thermodiffusion-Induced Filament Formation in Resistive-Switching Devices | Physical Review Applied | Jingjia Meng Enkui Lian Jonathan D Poplawsky Marek Skowronski | 2022/5/24 |
Simulation of lateral ion migration during electroforming process | arXiv preprint arXiv:2111.06215 | Jingjia Meng Enkui Lian Jonathan D Poplawsky Marek Skowronski | 2021/11/11 |
Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices | ACS applied materials & interfaces | Yuanzhi Ma David A Cullen Jonathan M Goodwill Qiyun Xu Karren L More | 2020/5/22 |
Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices | Journal of Applied Physics | Qiyun Xu Yuanzhi Ma Marek Skowronski | 2020/2/7 |
Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices | ACS Applied Electronic Materials | Yiqi Yu Bingyuan Zhao Jonathan M Goodwill Yuanzhi Ma James A Bain | 2020/2/3 |
Evolution of the conductive filament with cycling in TaOx-based resistive switching devices | Journal of Applied Physics | Yuanzhi Ma Phoebe P Yeoh Liting Shen Jonathan M Goodwill James A Bain | 2020/11/21 |
Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation | Journal of Applied Physics | Jingjia Meng Bingyuan Zhao Qiyun Xu Jonathan M Goodwill James A Bain | 2020/6/21 |
