Mark Law

Mark Law

University of Florida

H-index: 35

North America-United States

About Mark Law

Mark Law, With an exceptional h-index of 35 and a recent h-index of 20 (since 2020), a distinguished researcher at University of Florida,

His recent articles reflect a diverse array of research interests and contributions to the field:

Short Series Superconductor Density of States Integral Approximations

Results from the coldflux superconductor integrated circuit design tool project

Phosphorus diffusion and deactivation during SiGe oxidation

Effect of biased field rings to improve charge removal after heavy-ion strikes in vertical geometry β-Ga2O3 rectifiers

Modeling the Effects of Niobium Surface Roughness on Electrical Conductivity of Nb/Al-AlO/Nb Josephson Junctions

Radiation damage in the ultra-wide bandgap semiconductor Ga2O3

The diffusion mechanism of Ge during oxidation of Si/SiGe nanofins

Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN

Mark Law Information

University

Position

___

Citations(all)

4903

Citations(since 2020)

1332

Cited By

4135

hIndex(all)

35

hIndex(since 2020)

20

i10Index(all)

123

i10Index(since 2020)

37

Email

University Profile Page

University of Florida

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View Google Scholar Profile

Top articles of Mark Law

Title

Journal

Author(s)

Publication Date

Short Series Superconductor Density of States Integral Approximations

IEEE Transactions on Applied Superconductivity

Thomas Weingartner

Mark E Law

2023/1/26

Results from the coldflux superconductor integrated circuit design tool project

IEEE Transactions on Applied Superconductivity

Coenrad J Fourie

Kyle Jackman

Johannes Delport

Lieze Schindler

Tessa Hall

...

2023/8/18

Phosphorus diffusion and deactivation during SiGe oxidation

Journal of Applied Physics

Chappel S Thornton

Xiao Shen

Blair Tuttle

Xuebin Li

Mark E Law

...

2023/4/7

Effect of biased field rings to improve charge removal after heavy-ion strikes in vertical geometry β-Ga2O3 rectifiers

ECS Journal of Solid State Science and Technology

Ribhu Sharma

Jian-Sian Li

Mark Law

Fan Ren

Stephen J. Pearton

2023/2/17

Modeling the Effects of Niobium Surface Roughness on Electrical Conductivity of Nb/Al-AlO/Nb Josephson Junctions

IEEE Transactions on Applied Superconductivity

Lars Bjorndal

Nimesh Pokhrel

Thomas Weingartner

Polina Leger

Erin Patrick

...

2023/2/22

Radiation damage in the ultra-wide bandgap semiconductor Ga2O3

ECS J. Solid State Sci. Technol.

Xinyi Xia

Jian-Sian Li

Ribhu Sharma

Fan Ren

Md Abu Jafar Rasel

...

2022/8/23

The diffusion mechanism of Ge during oxidation of Si/SiGe nanofins

ACS Applied Materials & Interfaces

Chappel S Thornton

Blair Tuttle

Emily Turner

Mark E Law

Sokrates T Pantelides

...

2022/6/16

Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN

Minghan Xian

Fan Ren

Marko J Tadjer

Ribhu Sharma

Mark E Law

...

2022/1/1

Theory of Ge diffusion during the oxidation of Si/SiGe nano-fins

APS March Meeting Abstracts

Blair Tuttle

Mark Law

Kevin Jones

Chappel Sharrock

Sokrates Pantelides

2022

Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers

Journal of Vacuum Science & Technology A

Ribhu Sharma

Minghan Xian

Chaker Fares

Mark E Law

Marko Tadjer

...

2021/1/1

Modeling process and device behavior of Josephson junctions in superconductor electronics with TCAD

IEEE Transactions on Electron Devices

Thomas Weingartner

Nimesh Pokhrel

Miguel Sulangi

Lars Bjorndal

Erin Patrick

...

2021/6/11

Diffusion of dopants and impurities in β-Ga2O3

Journal of Vacuum Science & Technology A

Ribhu Sharma

Mark E Law

Fan Ren

Alexander Y Polyakov

Stephen J Pearton

2021/12/1

Rapid Ge Diffusion along Si/SiO2 Interfaces during High Temperature Oxidation for Quantum-Scale Structures.

Chappel Sharrock Thornton

Benjamin Hicks

Emily Turner

George T Wang

Mark Law

...

2021/5/1

Critical currents in conventional Josephson junctions with grain boundaries

Journal of Applied Physics

Miguel Antonio Sulangi

Laetitia Bettmann

TA Weingartner

N Pokhrel

E Patrick

...

2021/10/14

Activation Energy of Rapid Ge Diffusion along Si/SiO2 Interfaces during High Temperature Oxidation.

Chappel Sharrock

Benjamin Hicks

Emily Turner

George T Wang

Mark Law

...

2021/4/1

TCAD comprehensive silicon strain model using finite element quasi-Fermi discretization

Thomas Weingartner

Mark E Law

Keith Green

Andrew Thomas

Henry Johnson

...

2021/9/27

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

George Wang

Ping Lu

Keshab Sapkota

Andrew David Baczewski

Quinn Campbell

...

2021/9/1

Modeling the Effect of Fabrication Process on Grain Boundary Formation in Nb/Al-AlO/Nb Josephson Junction Circuit

IEEE Transactions on Applied Superconductivity

Nimesh Pokhrel

Thomas A Weingartner

Miguel A Sulangi

Erin E Patrick

Mark E Law

2021/3/17

Negative Impact of Compressive Biaxial Stress on High Precision Bipolar Devices

IEEE Transactions on Components, Packaging and Manufacturing Technology

Thomas A Weingartner

Chiao-Han Kuo

Andrew Thomas

Scott E Thompson

Mark E Law

2021/7/8

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Journal of Vacuum Science & Technology A

Xinyi Xia

Minghan Xian

Chaker Fares

Ribhu Sharma

Mark E Law

...

2021/12/1

See List of Professors in Mark Law University(University of Florida)

Co-Authors

H-index: 140
Stephen Pearton

Stephen Pearton

University of Florida

H-index: 106
Fan Ren

Fan Ren

University of Florida

H-index: 91
Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

H-index: 84
Ron Schrimpf

Ron Schrimpf

Vanderbilt University

H-index: 54
Eric Chason

Eric Chason

Brown University

H-index: 49
Robert Elliman

Robert Elliman

Australian National University

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