Loke Wan Khai
National University of Singapore
H-index: 23
Asia-Singapore
Top articles of Loke Wan Khai
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate | Semiconductor Science and Technology | Wan Khai Loke Kian Hua Tan Satrio Wicaksono Soon Fatt Yoon | 2024/4/22 |
Semi-empirical growth model of InSbBi grown by molecular beam epitaxy | Materials Science and Engineering: B | Wan Khai Loke Kian Hua Tan Satrio Wicaksono Soon Fatt Yoon | 2024/2/1 |
Growth of droplet-free InSbBi on GaAs substrate | AIP Advances | Kian Hua Tan Wan Khai Loke Satrio Wicaksono Soon Fatt Yoon | 2023/12/1 |
Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate | Materials Science and Engineering: B | Loke Wan Khai Wang Yue Xie Hanlin Tan Hui Teng Bao Shuyu | 2023/10/1 |
Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy | Materials Science and Engineering: B | Wan Khai Loke Kian Hua Tan Satrio Wicaksono Soon Fatt Yoon | 2023/8/1 |
In0. 3Ga0. 7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application | Materials Science in Semiconductor Processing | Wan Khai Loke Yue Wang Yu Gao Lina Khaw Kenneth Eng Kian Lee | 2022/8/1 |
Growth of InAs0. 32Sb0. 68 on GaAs using a thin GaInSb buffer and strain superlattice layers | AIP Advances | Kian Hua Tan Wan Khai Loke Satrio Wicaksono Soon Fatt Yoon | 2021/4/1 |
CMOS-Compatible Ti/TiN/Al refractory Ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate | IEEE Transactions on Electron Devices | Yue Wang Wan Khai Loke Yu Gao Kwang Hong Lee Kenneth Eng Kian Lee | 2021/10/25 |
Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers | Semiconductor Science and Technology | M Gabás E Ochoa-Martínez K Bielak D Pucicki I Lombardero | 2020/10/6 |
High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers | IEEE Journal of the Electron Devices Society | Loke Wan Khai Wang Yue Lee Kwang Hong Liu Zhihong Xie Hanlin | 2020/1/17 |
Co-Authors
