E A Fitzgerald
Massachusetts Institute of Technology
H-index: 100
North America-United States
Top articles of E A Fitzgerald
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Method of reducing semiconductor substrate surface unevenness | 2024/2/13 | ||
Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate | Materials Science and Engineering: B | Loke Wan Khai Wang Yue Xie Hanlin Tan Hui Teng Bao Shuyu | 2023/10/1 |
Method for fabricating a semiconductor device and the semiconductor device thereof | 2022/9/15 | ||
Integrated structure for an optoelectronic device and method of fabricating the same | 2022/8/4 | ||
In0. 3Ga0. 7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application | Materials Science in Semiconductor Processing | Wan Khai Loke Yue Wang Yu Gao Lina Khaw Kenneth Eng Kian Lee | 2022/8/1 |
Method of fabricating an integrated structure for an optoelectronic device and integrated structure for an optoelectronic device | 2022/11/3 | ||
Freestanding high-resolution quantum dot color converters with small pixel sizes | ACS Applied Materials & Interfaces | Saurabh Srivastava Kenneth E Lee Eugene A Fitzgerald Stephen J Pennycook Silvija Gradecak | 2022/10/24 |
Apparatus and method for wireless communication | 2022/4/12 | ||
Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs Model | Pilsoon Choi Ryan Fang Lan Wei Slim Boumaiza Ujwal Radhakrishna | 2022/10/16 | |
Light-emitting V-pits: An alternative approach toward luminescent indium-rich InGaN quantum dots | ACS Photonics | Jing-Yang Chung Zhang Li Sarah A Goodman Jinkyu So Govindo J Syaranamual | 2021/9/10 |
Subpixel circuitry for driving an associated light element, and method, display system and electronic device relating to same | 2021/8/10 | ||
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers | Shuyu Bao Yue Wang Khaw Lina Li Zhang Bing Wang | 2021/2/1 | |
CMOS-Compatible Ti/TiN/Al refractory Ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate | IEEE Transactions on Electron Devices | Yue Wang Wan Khai Loke Yu Gao Kwang Hong Lee Kenneth Eng Kian Lee | 2021/10/25 |
Method and device for low cost, high efficiency step photovoltaic cells | 2020/2/13 | ||
Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms | Siau Ben Chiah Xing Zhou Binit Syamal Kenneth Eng Kian Lee Cheng Yeow Ng | 2020/11/3 | |
High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers | IEEE Journal of the Electron Devices Society | Loke Wan Khai Wang Yue Lee Kwang Hong Liu Zhihong Xie Hanlin | 2020/1/17 |
Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers | Semiconductor Science and Technology | Bing Wang Govindo Joannesha Syaranamual Kwang Hong Lee Shuyu Bao Yue Wang | 2020/8/17 |
Fabrication of a device on a carrier substrate | 2020/6/2 | ||
The limits of electromechanical coupling in highly-tensile strained germanium | Nano Letters | Sijia Ran Tom S Glen Bei Li Dongliang Shi In-Suk Choi | 2020/4/17 |
Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display | 2020/11/24 |
Co-Authors
