Jordi Suñé

Jordi Suñé

Universidad Autónoma de Barcelona

H-index: 52

Europe-Spain

About Jordi Suñé

Jordi Suñé, With an exceptional h-index of 52 and a recent h-index of 27 (since 2020), a distinguished researcher at Universidad Autónoma de Barcelona, specializes in the field of electron devices, CMOS reliability, memristors, neuromorphic circuits.

His recent articles reflect a diverse array of research interests and contributions to the field:

The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices

Event-driven Stochastic Compact Model for Resistive Switching Devices

Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices

Hardware implementation of memristor-based artificial neural networks

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

Understanding the Input Signal Frequency Effects on the Resistive Window of Memristors

SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells

Fundamentals and SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices

Jordi Suñé Information

University

Position

Professor of Electronics IEEE Fellow

Citations(all)

9663

Citations(since 2020)

2978

Cited By

7714

hIndex(all)

52

hIndex(since 2020)

27

i10Index(all)

172

i10Index(since 2020)

68

Email

University Profile Page

Universidad Autónoma de Barcelona

Google Scholar

View Google Scholar Profile

Jordi Suñé Skills & Research Interests

electron devices

CMOS reliability

memristors

neuromorphic circuits

Top articles of Jordi Suñé

Title

Journal

Author(s)

Publication Date

The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices

IEEE Electron Device Letters

Enrique Miranda

E Piros

FL Aguirre

T Kim

P Schreyer

...

2024/2/20

Event-driven Stochastic Compact Model for Resistive Switching Devices

Authorea Preprints

Jordi Suñé

M Bargalló-González

M Saludes

F Campabadal

E Miranda

2024/2/16

Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices

Scientific Reports

FL Aguirre

E Piros

N Kaiser

T Vogel

S Petzold

...

2024/1/11

Hardware implementation of memristor-based artificial neural networks

Fernando Aguirre

Abu Sebastian

Manuel Le Gallo

Wenhao Song

Tong Wang

...

2024/3/4

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

Advanced Quantum Technologies

Jordi Suñé

Fernando Aguirre

Mireia Bargalló González

Francesca Campabadal

Enrique Miranda

2023/7

Understanding the Input Signal Frequency Effects on the Resistive Window of Memristors

Authorea Preprints

Marcos Maestro Izquierdo

Mireia B Gonzalez

Enrique Miranda

Jordi Suñé

2023/10/30

SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells

IEEE Electron Device Letters

E Miranda

FL Aguirre

M Saludes

MB Gonzalez

F Campabadal

...

2023/5/8

Fundamentals and SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices

Authorea Preprints

Enrique Miranda

Jordi Suñé

2023/10/30

SPICE Modeling of Memristive Devices-Based Neural Networks

FL Aguirre

J Suñé

E Miranda

2023/10/16

Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks

APL Machine Learning

F Aguirre

E Piros

N Kaiser

T Vogel

S Petzold

...

2023/9/1

Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models

Solid-State Electronics

Enrique Miranda

Fernando Leonel Aguirre

E Salvador

Mireia B Gonzalez

Francesca Campabadal

...

2023/12/1

Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model

IEEE Electron Device Letters

E Miranda

E Piros

FL Aguirre

T Kim

P Schreyer

...

2023/7/24

HfO2-Based Antifuse Memory Cells

Authorea Preprints

Enrique Miranda

Fernando Aguirre

Mercedes Saludes

Mireia B Gonzalez

Jordi Suñé

2023/10/30

SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices

Micromachines

Fernando Leonel Aguirre

Jordi Suñé

Enrique Miranda

2022/2/19

Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Juan Carlos Gonzalez-Rosillo

Rafael Ortega-Hernandez

Júlia Jareño-Cerulla

Enrique Miranda

Jordi Suñe

...

2022

Fast fitting of the dynamic memdiode model to the conduction characteristics of RRAM devices using convolutional neural networks

Micromachines

Fernando Leonel Aguirre

Eszter Piros

Nico Kaiser

Tobias Vogel

Stephan Petzold

...

2022/11/17

SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes

Solid-State Electronics

Mercedes Saludes-Tapia

Mireia Bargallo Gonzalez

Francesca Campabadal

Jordi Suñé

Enrique Miranda

2022/8/1

Compact Model for Oxygen Engineered Yttrium Oxide-Based Resistive Switching Devices

F Aguirre

E Piros

L Alff

C Hochberger

J Gehrunger

...

2022/7/4

A new perspective towards the understanding of the frequency-dependent behavior of memristive devices

IEEE Electron Device Letters

M Maestro-Izquierdo

MB Gonzalez

F Campabadal

J Sune

E Miranda

2021/3/2

Tunability Properties and Compact Modeling of HfO2-Based Complementary Resistive Switches Using a Three-Terminal Subcircuit

IEEE Transactions on Electron Devices

M Saludes-Tapia

S Poblador

MB Gonzalez

F Campabadal

J Sune

...

2021/10/15

See List of Professors in Jordi Suñé University(Universidad Autónoma de Barcelona)

Co-Authors

H-index: 71
Ferran Martin

Ferran Martin

Universidad Autónoma de Barcelona

H-index: 56
Bruno Riccò

Bruno Riccò

Università degli Studi di Bologna

H-index: 51
Lluis F. Marsal

Lluis F. Marsal

Universidad Rovira i Virgili

H-index: 39
pk hurley

pk hurley

University College Cork

H-index: 38
Enrique Miranda

Enrique Miranda

Universidad Autónoma de Barcelona

H-index: 37
Juan B. Roldán

Juan B. Roldán

Universidad de Granada

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