Jinhyun Noh

Jinhyun Noh

Purdue University

H-index: 13

North America-United States

About Jinhyun Noh

Jinhyun Noh, With an exceptional h-index of 13 and a recent h-index of 12 (since 2020), a distinguished researcher at Purdue University, specializes in the field of ESD, Devices, Circuits, TCAD, Semiconductors.

His recent articles reflect a diverse array of research interests and contributions to the field:

Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs

Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond

First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

First experimental demonstration of robust HZO/β-Ga₂O₃ ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in a high …

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of …

Structural and Material Innovations for High Performance Beta-Gallium Oxide Nano-Membrane Fets

Jinhyun Noh Information

University

Position

___

Citations(all)

548

Citations(since 2020)

457

Cited By

250

hIndex(all)

13

hIndex(since 2020)

12

i10Index(all)

15

i10Index(since 2020)

14

Email

University Profile Page

Google Scholar

Jinhyun Noh Skills & Research Interests

ESD

Devices

Circuits

TCAD

Semiconductors

Top articles of Jinhyun Noh

Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer

IEEE Transactions on Electron Devices

2022/11/18

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs

2022/6/12

Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

IEEE Transactions on Electron Devices

2022/1/25

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond

IEEE Transactions on Electron Devices

2023/1/16

First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

Nanotechnology

2021/12/24

First experimental demonstration of robust HZO/β-Ga₂O₃ ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in a high …

IEEE Transactions on Electron Devices

2021/3/19

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of …

IEEE Transactions on Electron Devices

2021/3/5

Structural and Material Innovations for High Performance Beta-Gallium Oxide Nano-Membrane Fets

2021

Jinhyun Noh
Jinhyun Noh

H-Index: 8

The impact of channel semiconductor on the memory characteristics of ferroelectric field-effect transistors

IEEE Journal of the Electron Devices Society

2020/7/29

Field-Effect Transistors 4: Nano-Membrane β-Ga2O3 Field-Effect Transistors

Gallium Oxide: Materials Properties, Crystal Growth, and Devices

2020

See List of Professors in Jinhyun Noh University(Purdue University)

Co-Authors

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