Hong Zhou
Xidian University
H-index: 41
Asia-China
Top articles of Hong Zhou
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability | Science China Information Sciences | Kui Dang Zhilin Qiu Shudong Huo Peng Zhan Huining Liu | 2024/2 |
Demonstration of the normally off β-Ga2O3 MOSFET with high threshold voltage and high current density | Applied Physics Letters | Yuncong Cai Zhaoqing Feng Zhengxing Wang Xiufeng Song Zhuangzhuang Hu | 2023/11/6 |
First Demonstration of Watt-Level C-Band MMIC Rectifier With GaN Schottky Diode | IEEE Microwave and Wireless Technology Letters | Kui Dang Huining Liu Chaoqun Zhang Shudong Huo Peng Zhan | 2023/1/9 |
β-Ga2O3 Lateral Schottky Barrier Diodes with > 10 kV Breakdown Voltage and Anode Engineering | IEEE Electron Device Letters | Chenlu Wang Qinglong Yan Chaoqun Zhang Chunxu Su Kun Zhang | 2023/8/30 |
Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage | Pengfei Dong Chenlu Wang Qinglong Yan Yingming Wang Jian Wang | 2023/6/25 | |
Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes | Materials Today Electronics | Abdulaziz Almalki Labed Madani Nouredine Sengouga Sultan Alhassan Saud Alotaibi | 2023/6/1 |
1.1 A/mm ß-Ga2O3-on-SiC RF MOSFETs with 2.3 W/mm Pout and 30% PAE at 2 GHz and fT/fmax of 27.6/57 GHz | Min Zhou Hong Zhou Sen Huang Mengwei Si Yuhao Zhang | 2023/12/9 | |
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing | IEEE Electron Device Letters | Chenlu Wang Qinglong Yan Chunxu Su Sami Alghamdi Emad Ghandourah | 2023/1/19 |
Ultra-wide bandgap semiconductor Ga2O3 power diodes | Nature communications | Jincheng Zhang Pengfei Dong Kui Dang Yanni Zhang Qinglong Yan | 2022/7/6 |
GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value | IEEE Transactions on Electron Devices | Hanghai Du Jincheng Zhang Hong Zhou Zhihong Liu Tao Zhang | 2022/1/10 |
Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination | Applied Physics Letters | Qinglong Yan Hehe Gong Hong Zhou Jincheng Zhang Jiandong Ye | 2022/2/28 |
A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics | Journal of Physics D: Applied Physics | Xiufeng Song Baorui Sun Jincheng Zhang Shenglei Zhao Zhaoke Bian | 2022/4/8 |
High-Performance β-Ga2O3-Based Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor Under Zero Gate Bias | IEEE Transactions on Electron Devices | Zhe Li Zhaoqing Feng Yuwen Huang Yu Xu Zeyulin Zhang | 2022/6/3 |
BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric | IEEE Electron Device Letters | Jieying Wang Hong Zhou Sami Alghamdi Jincheng Zhang Xuefeng Zheng | 2022/10/25 |
Self-aligned and low-capacitance lateral GaN diode for X-band high-efficiency rectifier | IEEE Electron Device Letters | Kui Dang Peng Zhan Jincheng Zhang Hong Zhou Shudong Huo | 2022/2/24 |
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC | IEEE Electron Device Letters | Pengfei Dong Jincheng Zhang Qinglong Yan Zhihong Liu Peijun Ma | 2022/3/16 |
Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation | IEEE Transactions on Electron Devices | Weina Lei Kui Dang Hong Zhou Jincheng Zhang Chenlu Wang | 2022/5/13 |
Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure | Applied Physics Letters | Hanghai Du Zhihong Liu Lu Hao Weichuan Xing Weihang Zhang | 2022/10/24 |
Impacts of oxygen source on band alignment of ALD Al2O3/(α-, ε-) Ga2O3 interface | Journal of Crystal Growth | Yan Zuo Qian Feng Tao Zhang HaiFeng Luo Xusheng Tian | 2022/2/15 |
Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD | Ceramics International | Tao Zhang Yifan Li Qian Cheng Zhiguo Hu Jinbang Ma | 2022/3/15 |
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