Geok Ing Ng
Nanyang Technological University
H-index: 38
Asia-Singapore
Top articles of Geok Ing Ng
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications | IEEE Transactions on Electron Devices | Matteo Meneghini Geok Ing Ng Farid Medjdoub Matteo Buffolo Shireen Warnock | 2024/3/1 |
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress | Microelectronics Reliability | HT Tan Y Gao GJ Syaranamual WA Sasangka Siew Chuen Foo | 2023/11/1 |
Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate | Materials Science and Engineering: B | Loke Wan Khai Wang Yue Xie Hanlin Tan Hui Teng Bao Shuyu | 2023/10/1 |
A Wideband GaN HEMT Modelling with Comprehensive Hybrid Parameter Extraction for 5G Power Amplifiers | Zhongzhiguang Lu Hanlin Xie Jiaming Piao Wei Zhengzhe Ng Geok Ing | 2023/5/21 | |
Non-linear thermal resistance model for the simulation of high power GaN-based devices | Semiconductor Science and Technology | Sergio García-Sánchez I Íñiguez-de-la-Torre S Pérez Kumud Ranjan Manvi Agrawal | 2021/3/29 |
Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering | Applied Physics Letters | Holger Fiedler Jérôme Leveneur David RG Mitchell Subramaniam Arulkumaran Geok Ing Ng | 2021/1/4 |
AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs | Applied Physics Express | Hanlin Xie Zhihong Liu Wenrui Hu Yu Gao Hui Teng Tan | 2021/12/22 |
CMOS-compatible InAlN/GaN HEMTs on silicon for RF power amplifiers in 5G mobile SoCs | Hanlin Xie Zhihong Liu Wenrui Hu Yu Gao Kenneth E Lee | 2021/11/15 | |
Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate | Materials Science and Engineering: B | Matthew Whiteside Subramaniam Arulkumaran Geok Ing Ng | 2021/8/1 |
Phase noise reduction of a 2 µm passively mode-locked laser through hybrid III-V/silicon integration | Optica | Xiang Li Jia Xu Brian Sia Wanjun Wang Zhongliang Qiao Xin Guo | 2021/6/20 |
100 nm T-gate GaN-on-Si HEMTs fabricated with CMOS-compatible metallization for microwave and mm-Wave applications | Hanlin Xie Zhihong Liu Yu Gao Kenneth E Lee Geok Ing Ng | 2021/4/8 | |
Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond | physica status solidi (a) | Kumud Ranjan Abhinay Sandupatla Subramaniam Arulkumaran Geok Ing Ng | 2020/4 |
High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers | IEEE Journal of the Electron Devices Society | Loke Wan Khai Wang Yue Lee Kwang Hong Liu Zhihong Xie Hanlin | 2020/1/17 |
CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V | Applied Physics Express | Hanlin Xie Zhihong Liu Yu Gao Kumud Ranjan Kenneth E Lee | 2020/1/10 |
Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes | Materials Science and Engineering: B | M Whiteside S Arulkumaran Y Dikme A Sandupatla GI Ng | 2020/12/1 |
Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer | Japanese Journal of Applied Physics | S Abhinay S Arulkumaran GI Ng K Ranjan M Deki | 2020/1/9 |
GaN-on-Si HEMTs fabricated with Si CMOS-compatible metallization for power amplifiers in low-power mobile SoCs | IEEE microwave and wireless components letters | Hanlin Xie Zhihong Liu Wenrui Hu Zheng Zhong Kenneth Lee | 2020/11/17 |
Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate | Electronics | Matthew Whiteside Subramaniam Arulkumaran Yilmaz Dikme Abhinay Sandupatla Geok Ing Ng | 2020/11/5 |
Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures | Applied Physics Express | Abhinay Sandupatla Subramaniam Arulkumaran Geok Ing Ng Kumud Ranjan Manato Deki | 2020/5/29 |
On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate | Applied Physics Express | Matthew Whiteside Subramaniam Arulkumaran Soon Siang Chng Maziar Shakerzadeh Hang Tong Edwin Teo | 2020/5/28 |
