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Igor Krylov

About Igor Krylov

Igor Krylov, With an exceptional h-index of 12 and a recent h-index of 7 (since 2020), a distinguished researcher at Technion - Israel Institute of Technology, specializes in the field of Atomic layer deposition of thin films, semiconductor/insulator interfaces.

His recent articles reflect a diverse array of research interests and contributions to the field:

Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300° C by inserting TiO2 interlayers

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect

Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

Igor Krylov Information

University

Position

___

Citations(all)

383

Citations(since 2020)

139

Cited By

320

hIndex(all)

12

hIndex(since 2020)

7

i10Index(all)

16

i10Index(since 2020)

5

Email

University Profile Page

Google Scholar

Igor Krylov Skills & Research Interests

Atomic layer deposition of thin films

semiconductor/insulator interfaces

Top articles of Igor Krylov

Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300° C by inserting TiO2 interlayers

Applied Physics Letters

2021/1/18

Yuanshen Qi
Yuanshen Qi

H-Index: 11

Igor Krylov
Igor Krylov

H-Index: 9

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

Journal of Applied Physics

2020/5/7

Igor Krylov
Igor Krylov

H-Index: 9

Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

Journal of Vacuum Science & Technology A

2020/5/1

Igor Krylov
Igor Krylov

H-Index: 9

Yuanshen Qi
Yuanshen Qi

H-Index: 11

Eilam Yalon
Eilam Yalon

H-Index: 17

Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect

Journal of Applied Physics

2020/8/14

Igor Krylov
Igor Krylov

H-Index: 9

Eilam Yalon
Eilam Yalon

H-Index: 17

Dan Ritter
Dan Ritter

H-Index: 19

Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

Applied Physics Letters

2020/7/27

Igor Krylov
Igor Krylov

H-Index: 9

Yuanshen Qi
Yuanshen Qi

H-Index: 11

Eilam Yalon
Eilam Yalon

H-Index: 17

See List of Professors in Igor Krylov University(Technion - Israel Institute of Technology)

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