Igor Krylov

About Igor Krylov

Igor Krylov, With an exceptional h-index of 12 and a recent h-index of 7 (since 2020), a distinguished researcher at Technion - Israel Institute of Technology, specializes in the field of Atomic layer deposition of thin films, semiconductor/insulator interfaces.

His recent articles reflect a diverse array of research interests and contributions to the field:

Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300° C by inserting TiO2 interlayers

Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect

Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

Igor Krylov Information

University

Position

___

Citations(all)

383

Citations(since 2020)

139

Cited By

320

hIndex(all)

12

hIndex(since 2020)

7

i10Index(all)

16

i10Index(since 2020)

5

Email

University Profile Page

Technion - Israel Institute of Technology

Google Scholar

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Igor Krylov Skills & Research Interests

Atomic layer deposition of thin films

semiconductor/insulator interfaces

Top articles of Igor Krylov

Title

Journal

Author(s)

Publication Date

Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300° C by inserting TiO2 interlayers

Applied Physics Letters

Yuanshen Qi

Xianbin Xu

Igor Krylov

Moshe Eizenberg

2021/1/18

Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect

Journal of Applied Physics

Igor Krylov

Valentina Korchnoy

Xianbin Xu

Kamira Weinfeld

Eilam Yalon

...

2020/8/14

Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

Applied Physics Letters

Igor Krylov

Yuanshen Qi

Valentina Korchnoy

Kamira Weinfeld

Moshe Eizenberg

...

2020/7/27

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

Journal of Applied Physics

Sebastián Matías Pazos

Santiago Boyeras Baldomá

Fernando Leonel Aguirre

Igor Krylov

M Eizenberg

...

2020/5/7

Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

Journal of Vacuum Science & Technology A

Igor Krylov

Yuanshen Qi

Valentina Korchnoy

Kamira Weinfeld

Moshe Eizenberg

...

2020/5/1

See List of Professors in Igor Krylov University(Technion - Israel Institute of Technology)

Co-Authors

H-index: 43
Boaz Pokroy

Boaz Pokroy

Technion - Israel Institute of Technology

H-index: 39
Dan Ritter

Dan Ritter

Technion - Israel Institute of Technology

H-index: 19
Lior Kornblum

Lior Kornblum

Technion - Israel Institute of Technology

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